公开(公告)号：US11492698B2

公开(公告)日：2022-11-08

申请号：US16519845

申请日：2019-07-23

Applicant: Applied Materials, Inc.

Inventor： Wolfgang R. Aderhold ,  Abhilash J. Mayur

IPC: C23C14/50 ,  C23C14/48 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

Abstract: A pedestal for a thermal treatment chamber is disclosed that includes a body consisting of an optically transparent material. The body includes a first plate with a perforated surface having a plurality of nozzles formed therein, a first portion of the plurality nozzles formed in the body at an angle that is orthogonal to a plane of the first plate, a second portion of the plurality of nozzles formed in the body in an azimuthal orientation and at an acute angle relative to the plane of the first plate, and a third portion of the plurality nozzles formed in the body in a radial orientation and at an acute angle relative to the plane of the first plate.

公开(公告)号：US11469100B2

公开(公告)日：2022-10-11

申请号：US16817007

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yong Sun ,  Praket Prakash Jha ,  Jingmei Liang ,  Martin Jay Seamons ,  DongQing Li ,  Shashank Sharma ,  Abhilash J. Mayur ,  Wolfgang R. Aderhold

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H01J37/32

Abstract: A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

公开(公告)号：US09737959B2

公开(公告)日：2017-08-22

申请号：US14478118

申请日：2014-09-05

Applicant: Applied Materials, Inc.

Inventor： Dean C. Jennings ,  Mark Yam ,  Abhilash J. Mayur ,  Vernon Behrens ,  Paul A. O'Brien ,  Leonid M. Teritski ,  Alexander Goldin

IPC: B23K26/00 ,  G02B13/08 ,  B23K26/06 ,  B23K26/03 ,  B23K26/04 ,  B23K26/073 ,  B23K26/08 ,  B23K26/12 ,  B23K26/34 ,  C23C8/00 ,  C23C8/10 ,  C23C8/22 ,  C23C16/04 ,  C23C16/48 ,  G02B27/09 ,  H01L21/00 ,  H01L21/20 ,  H01L21/67 ,  B23K26/064 ,  B23K26/142 ,  B23K26/082 ,  B23K26/70 ,  B23K26/32 ,  B23K101/40 ,  B23K101/34 ,  B23K103/00 ,  B23K103/08

CPC classification number: H01L21/02683 ,  B23K26/032 ,  B23K26/034 ,  B23K26/04 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/0665 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/083 ,  B23K26/0838 ,  B23K26/0869 ,  B23K26/123 ,  B23K26/125 ,  B23K26/142 ,  B23K26/32 ,  B23K26/34 ,  B23K26/705 ,  B23K2101/34 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/50 ,  C23C8/00 ,  C23C8/10 ,  C23C8/22 ,  C23C16/047 ,  C23C16/481 ,  G02B27/0955 ,  H01L21/00 ,  H01L21/2026 ,  H01L21/67115

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

公开(公告)号：US20150053659A1

公开(公告)日：2015-02-26

申请号：US14478118

申请日：2014-09-05

Applicant: Applied Materials, Inc.

Inventor： Dean C. Jennings ,  Mark Yam ,  Abhilash J. Mayur ,  Vernon Behrens ,  Paul A. O'Brien ,  Leonid M. Teritski ,  Alexander Goldin

IPC: B23K26/06 ,  H01L21/67

CPC classification number: H01L21/02683 ,  B23K26/032 ,  B23K26/034 ,  B23K26/04 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/0665 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/083 ,  B23K26/0838 ,  B23K26/0869 ,  B23K26/123 ,  B23K26/125 ,  B23K26/142 ,  B23K26/32 ,  B23K26/34 ,  B23K26/705 ,  B23K2101/34 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/50 ,  C23C8/00 ,  C23C8/10 ,  C23C8/22 ,  C23C16/047 ,  C23C16/481 ,  G02B27/0955 ,  H01L21/00 ,  H01L21/2026 ,  H01L21/67115

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

Abstract translation: 热处理装置包括平台，连续波电磁辐射源，一系列透镜，平移机构，检测模块，三维自动对焦以及计算机系统。 该台被配置为在其上接收基板。 连续波电磁辐射源被设置在与该台相邻的位置，并且被配置成沿着朝向衬底的路径发射连续波电磁辐射。 该系列透镜设置在连续波电磁辐射源和台之间，并被配置为将连续波电磁辐射冷凝成基片表面上的连续波电磁辐射线。 翻译机构被配置为相对于彼此平移连续波电磁辐射的阶段和线。 检测模块位于路径内，被配置为检测连续波电磁辐射。

公开(公告)号：US11823901B2

公开(公告)日：2023-11-21

申请号：US17174395

申请日：2021-02-12

Applicant: Applied Materials, Inc.

Inventor： Xinming Zhang ,  Abhilash J. Mayur ,  Shashank Sharma ,  Norman L. Tam ,  Matthew Spuller

IPC: H01L21/02 ,  H01L21/30 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/02667 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/3003 ,  H10B41/27 ,  H01L21/02164 ,  H01L21/02532 ,  H10B43/27

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.

公开(公告)号：US09595459B2

公开(公告)日：2017-03-14

申请号：US14832564

申请日：2015-08-21

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph M. Ranish ,  Aaron Muir Hunter

IPC: H01L21/67 ,  B23K26/06 ,  B23K26/00 ,  B23K26/08 ,  F27B17/00 ,  B23K26/12

CPC classification number: H01L21/67115 ,  B23K26/0639 ,  B23K26/064 ,  B23K26/08 ,  B23K26/127 ,  F27B17/0025 ,  H01L21/67248

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

公开(公告)号：US09263265B2

公开(公告)日：2016-02-16

申请号：US14472825

申请日：2014-08-29

Applicant: Applied Materials, Inc.

Inventor： Shashank Sharma ,  Shankar Muthukrishnan ,  Abhilash J. Mayur

IPC: H01L21/48 ,  H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/02683 ,  H01L21/02532 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248

Abstract: A method is disclosed for crystallizing semiconductor material so that it has large grains of uniform size comprising delivering a first energy exposure of high intensity and short duration, and then delivering at least one second energy exposures of low intensity and long duration. The first energy exposure heats the substrate to a high temperature for a duration less than about 0.1 sec. The second energy exposure heats the substrate to a lower temperature for a duration greater than about 0.1 sec.

Abstract translation: 公开了一种用于使半导体材料结晶的方法，使得其具有均匀尺寸的大晶粒，包括递送高强度和短持续时间的第一能量曝光，然后传递至少一个低强度和长持续时间的第二能量曝光。 第一能量曝光将基板加热至高于约0.1秒的持续时间。 第二能量曝光将基板加热到较低温度持续大于约0.1秒。

公开(公告)号：US09130001B2

公开(公告)日：2015-09-08

申请号：US14287782

申请日：2014-05-27

Applicant: Applied Materials, Inc.

Inventor： Blake Koelmel ,  Joseph M. Ranish ,  Abhilash J. Mayur

IPC: F27B5/00 ,  F27B5/06 ,  F27D5/00 ,  H01L21/673 ,  F27D11/12 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/67346 ,  F27D5/0037 ,  F27D11/12 ,  F27D2005/0081 ,  H01L21/67115 ,  H01L21/68735

Abstract: Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more fins formed on an energy receiving surface of the edge ring. The fins may have at least one sloped side relative to a main body of the edge ring.

Abstract translation: 本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供了一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个翅片。 翅片可以相对于边缘环的主体具有至少一个倾斜侧面。

公开(公告)号：US12085965B2

公开(公告)日：2024-09-10

申请号：US17463177

申请日：2021-08-31

Applicant: Applied Materials, Inc.

Inventor： Wolfgang R. Aderhold ,  Abhilash J. Mayur ,  Yi Wang

IPC: H01L21/324 ,  G01J5/34 ,  G05B13/02 ,  G05D23/19 ,  G05D23/27 ,  G06N20/00 ,  H01L21/66 ,  H05B1/02 ,  F27B17/00 ,  H05B3/00

CPC classification number: G05D23/1917 ,  G01J5/34 ,  G05B13/0265 ,  G05D23/27 ,  G06N20/00 ,  H01L22/12 ,  H05B1/0233 ,  F27B17/0025 ,  H05B3/0047

Abstract: Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.

公开(公告)号：US11978646B2

公开(公告)日：2024-05-07

申请号：US15982785

申请日：2018-05-17

Applicant: Applied Materials, Inc.

Inventor： Dongming Iu ,  Kartik Shah ,  Norman L. Tam ,  Matthew Spuller ,  Jau-Jiun Chen ,  Kong Lung Samuel Chan ,  Elizabeth Neville ,  Preetham Rao ,  Abhilash J. Mayur ,  Gia Pham

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/56 ,  H01L21/687

CPC classification number: H01L21/67103 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/56 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68792 ,  H01L21/67098

Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.