Quality improver for frozen doughs
    31.
    发明授权
    Quality improver for frozen doughs 失效
    冷冻面团的质量改进剂

    公开(公告)号:US4664932A

    公开(公告)日:1987-05-12

    申请号:US787192

    申请日:1985-10-15

    CPC classification number: A21D2/08 A21D6/001

    Abstract: A quality improver for frozen doughs wherein(1) emulsifiers comprising at least one of glycerin fatty acid esters, polyglycerin fatty acid esters, diacetyl tartaric acid esters of monoglyceride, succinic acid esters of monoglyceride, sucrose fatty acid esters, soybean phospholipids, calcium stearoyl lactylate and sodium stearoyl lactylate are mixed with(2) wheat gluten, and the resulted mixture are combined with(3) polymeric substances comprises at least one of alginic acid, sodium alginate, propylene glycol alginate and xanthan gum, and(4) at least one selected from cystine, sodium hyposulfite, protease and lactic acid and lactate are combined therewith.

    Abstract translation: 一种用于冷冻面团的质量改进剂,其中(1)包含甘油脂肪酸酯,聚甘油脂肪酸酯,单甘油酯的二乙酰酒石酸酯,单甘油酯的琥珀酸酯,蔗糖脂肪酸酯,大豆磷脂,硬脂酰乳酸钙中的至少一种的乳化剂 和硬脂酰乳酸钠与(2)小麦面筋混合,将所得混合物与(3)包含藻酸,藻酸钠,丙二醇藻酸盐和黄原胶中的至少一种的聚合物合并,和(4)至少一种 选自胱氨酸,次亚硫酸氢钠,蛋白酶和乳酸和乳酸盐组合。

    Photoacoustic spectrometer
    32.
    发明授权
    Photoacoustic spectrometer 失效
    光声光谱仪

    公开(公告)号:US4436428A

    公开(公告)日:1984-03-13

    申请号:US210407

    申请日:1980-11-25

    CPC classification number: G01N21/1702

    Abstract: By the use of one or more beams of chopped, variable-frequency, monochromatic light to illuminate the sample chamber of at least one gas-filled cell including such sample chamber and a reference chamber joined to the sample chamber by a tunnel-like opening or orifice which permits fluid communication between the chambers and incorporating a thermal-flowmeter-type sensor element in the path of flow of the fluid between the chambers of each such cell, the compositional characteristics of one or more samples in each sample chamber can be determined accurately.

    Abstract translation: 通过使用一束或多束斩波,可变频率的单色光来照亮包括这样的样品室的至少一个充气单元的样品室和通过隧道状开口连接到样品室的参考室, 孔,其允许腔室之间的流体连通并且将热流量计型传感器元件结合在每个这样的单元的腔室之间的流体流动的路径中,可以准确地确定每个样品室中的一个或多个样品的组成特征 。

    High breakdown voltage semiconductor device
    33.
    发明授权
    High breakdown voltage semiconductor device 失效
    高击穿电压半导体器件

    公开(公告)号:US4388635A

    公开(公告)日:1983-06-14

    申请号:US164946

    申请日:1980-07-01

    CPC classification number: H01L29/408 H01L29/0638 H01L29/0661

    Abstract: A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is exposed being covered with a passivation material. An auxiliary electrode of a conductive member is provided, which is disposed externally of the peripheral edge of the major surface of the semiconductor substrate, and which contacts to the passivation material and is electrically connected to the main electrode. When a voltage for reverse biasing the PN junction is applied between the pair of main electrodes, ions in the passivation material are collected by an electric field established in the passivation material so that the deterioration of the breakdown on the surface of the semiconductor substrate is prevented.

    Abstract translation: 高击穿电压半导体器件的新颖结构具有一对主表面,其上形成有一对主电极,并且在一对主表面之间形成有PN结被暴露的侧表面覆盖的PN结 钝化材料。 提供了一种导电构件的辅助电极,其设置在半导体衬底的主表面的外围边缘的外侧,并与钝化材料接触并与主电极电连接。 当在一对主电极之间施加用于反向偏置PN结的电压时,通过在钝化材料中建立的电场来收集钝化材料中的离子,从而防止半导体衬底的表面上的击穿劣化 。

    Photoacoustic spectrometer with analysis-signal enhancement
    34.
    发明授权
    Photoacoustic spectrometer with analysis-signal enhancement 失效
    具有分析信号增强的光声光谱仪

    公开(公告)号:US4273450A

    公开(公告)日:1981-06-16

    申请号:US80167

    申请日:1979-09-28

    CPC classification number: G01N21/1702

    Abstract: By autocorrelating the sample photoacoustic response signal and the reference photoacoustic response signal, respectively, obtained from the sample and reference cells, of a photoacoustic spectrometer, and cross-correlating the autocorrelated signals to produce a third signal, simple mathematical operations upon the resulting three signals will produce accurate sample analysis free from the effects of the noise arising from sample illumination intensity variations and other random phenomena.

    Abstract translation: 通过自动关联样品光声响应信号和从样品和参考单元获得的光声光谱仪的参考光声响应信号,并将自相关信号互相关,以产生第三信号,对所得到的三个信号进行简单的数学运算 将产生不受样品照射强度变化和其他随机现象引起的噪音影响的精确样品分析。

    Semiconductor controlled rectifier device with small area dV/dt
self-protecting means
    35.
    发明授权
    Semiconductor controlled rectifier device with small area dV/dt self-protecting means 失效
    具有小面积dV / dt自保护装置的半导体可控整流器件

    公开(公告)号:US4240091A

    公开(公告)日:1980-12-16

    申请号:US68571

    申请日:1979-08-22

    CPC classification number: H01L29/7424 H01L29/7428

    Abstract: A main thyristor region is formed which comprises four continuous layers of alternately different conductivities consisting of first, second, third and fourth layers, PNPN for example. The main thyristor region constitutes a main thyristor section together with a couple of main electrodes in ohmic contact with the outside ones of the four layers. A pilot thyristor section and an auxiliary pilot thyristor section are constituted by employing the first, second and third layers of the main thyristor section and the main electrode in ohmic contact with the outside of the first layer and further by introducing fifth and sixth layers for forming PH junctions with the third layer. Further, there are provided a gate means for turning on the pilot thyristor section and an auxiliary gate means being in contact with the fifth or sixth layer. The auxiliary pilot thyristor section, main thyristor section and pilot thyristor section are formed in such a way that the respective triggering voltages satisfy the following relation:.vertline.dV/dt.vertline.aux

    Abstract translation: 形成主晶闸管区域,其包括由例如PNPN组成的由第一层,第二层,第三层和第四层构成的交替不同导电性的四个连续层。 主晶闸管区域与与四层中的外层电阻欧姆接触的一对主电极构成主晶闸管部分。 通过使用主晶闸管部分的第一层,第二层和第三层与主电极与第一层的外部欧姆接触并进一步通过引入第五层和第六层来形成导引晶闸管部分和辅助导频晶闸管部分 PH结点与第三层。 此外,提供了用于导通导频晶闸管部分的栅极装置和与第五或第六层接触的辅助栅极装置。 辅助导频晶闸管部分,主晶闸管部分和导频晶闸管部分形成为使得各个触发电压满足以下关系:| dV / dt|aux <| dV / dt | main,| dV / dt | pil 形成在辅助先导晶闸管部分和第三层之间的PN结的整个外围区域被辅助导频晶闸管部分的栅极装置完全短路。

    Audio signal reproduction device and audio signal reproduction system
    36.
    发明授权
    Audio signal reproduction device and audio signal reproduction system 有权
    音频信号再现装置和音频信号再现系统

    公开(公告)号:US08135151B2

    公开(公告)日:2012-03-13

    申请号:US12664557

    申请日:2008-05-23

    Applicant: Atsuo Watanabe

    Inventor: Atsuo Watanabe

    CPC classification number: H04S3/002 H04R2400/03

    Abstract: In an audio signal reproduction device and an audio signal reproduction system of the present invention, an SLch sound is reproduced as a mixed sound that is adjusted appropriately by two speakers 5a, 5d located at Lch and SBLch speaker positions, and an SRch sound is reproduced as a mixed sound that is adjusted appropriately by two speakers 5b, 5e located at Rch and SBRch speaker positions. This configuration can achieve 5.1ch virtual reproduction with high sound quality in which sounds for 5.1 channels of LPCM 7.1ch audio information included in the contents are output as they are and sounds for the remaining 2 channels are reproduced artificially even if speakers compatible with the 5.1ch sound field system are connected.

    Abstract translation: 在本发明的音频信号再现装置和音频信号再现系统中,SLch声音被再现为由位于Lch和SBLch扬声器位置的两个扬声器5a,5d适当地调节的混合声音,并且再现SRch声音 作为由位于Rch和SBRch扬声器位置的两个扬声器5b,5e适当调节的混合声音。 该配置可以实现5.1声道高音质虚拟再现,其中内容中包含的5.1声道LPCM 7.1声道信息的声音原样输出,剩下的2声道的声音即使人声兼容,即使扬声器与5.1 ch声场系统连接。

    Semiconductor device
    38.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07663181B2

    公开(公告)日:2010-02-16

    申请号:US11206271

    申请日:2005-08-18

    CPC classification number: H01L21/823487 H01L29/7722

    Abstract: A semiconductor device includes a vertical field-effect transistor having a substrate of first conduction type in a substrate base, a drain electrode formed on a first surface of the substrate, an epitaxial layer of first conduction type formed on a second surface of the substrate, a source region of first conduction type formed on the semiconductor base, a source ohmic contact metal film in ohmic contact with the source region, trenches formed from the second surface of the semiconductor base, and a gate region of second conduction type formed along the trenches. The semiconductor device further includes a gate rise metal film in ohmic contact with the draw-out layer of the gate region on the bottom of the trenches and rising to the second surface of the semiconductor base, and a gate draw-out metal film connected to the gate rise metal film from the second surface of the semiconductor base.

    Abstract translation: 半导体器件包括:垂直场效应晶体管,其具有在基板基底中的第一导电类型的衬底;形成在衬底的第一表面上的漏电极,形成在衬底的第二表面上的第一导电类型的外延层; 在半导体基底上形成的第一导电类型的源极区域,与源极区欧姆接触的源欧姆接触金属膜,从半导体基底的第二表面形成的沟槽和沿着沟槽形成的第二导电类型的栅极区域 。 半导体器件还包括与沟槽底部的栅极区域的引出层欧姆接触并上升到半导体基底的第二表面的栅极上升金属膜,以及连接到 来自半导体基底的第二表面的栅极上升金属膜。

    Paper machine press roll with a ceramic coating
    39.
    发明授权
    Paper machine press roll with a ceramic coating 失效
    造纸机压辊用陶瓷涂层

    公开(公告)号:US07527583B2

    公开(公告)日:2009-05-05

    申请号:US11085692

    申请日:2005-03-21

    Applicant: Atsuo Watanabe

    Inventor: Atsuo Watanabe

    CPC classification number: C23C4/10 C23C4/00 Y10T29/49563

    Abstract: A paper machine press roll comprises a core roll and a ceramics sprayed film formed on an outer periphery of the core roll, in which values of Rk and Vo which are characteristic evaluation parameters of a plateau-structure surface of the ceramics sprayed film are Rk≦8.0 μm and Vo≧0.030 mm3/cm2. (Vo=(100−Mr2)×Rvk/2000 (mm3/cm2) where Rk, Mr2 and Rvk are a core level difference, a core load length ratio and a projecting valley depth, respectively which are defined in JIS B0671-2-2002 (ISO13565-2-1996).

    Abstract translation: 造纸机压辊包括芯辊和形成在芯辊的外周上的陶瓷喷涂膜,其中作为陶瓷喷涂膜的平台结构表面的特征评估参数的Rk和Vo值为< in-line-formula description =“In-line Formulas”end =“lead”?> Rk <= 8.0 mum和<?in-line-formula description =“In-line formula”end =“tail”?> <? in-line-formula description =“In-line Formulas”end =“lead”?> Vo> = 0.030 mm3 / cm2。<?in-line-formula description =“In-line Formulas”end =“tail”?> (Vo =(100-Mr2)×Rvk / 2000(mm3 / cm2)其中Rk,Mr2和Rvk分别是在JIS B0671-2-2002中定义的芯级差,芯负载长度比和突出谷深度 (ISO13565-2-1996)。

    A/V AMPLIFIER AND METHOD FOR DRIVING THE SAME
    40.
    发明申请
    A/V AMPLIFIER AND METHOD FOR DRIVING THE SAME 有权
    A / V放大器及其驱动方法

    公开(公告)号:US20090016539A1

    公开(公告)日:2009-01-15

    申请号:US11814791

    申请日:2006-02-23

    Applicant: Atsuo Watanabe

    Inventor: Atsuo Watanabe

    CPC classification number: H04S5/02 H03F3/181 H03F3/217 H03F3/68 H03F2200/03

    Abstract: For achieving an audio reproduction with high sound quality, in a multi-channel A/V amplifier, front speakers are driven with a parallel-drive bi-amplifier arrangement upon stereo reproduction. In the case of the multi-channel reproduction mode, the switching circuit allows an output signal of each channel of the decoder to be sent to speakers via amplifiers for each channel in one-to-one correspondence. On the other hand, in the case of the 2-channel stereo reproduction mode, the switching circuit allows at least two amplifiers among the plurality of amplifiers to be connected in parallel between the output signal for each of the channels L and R of the decoder and the speakers for each of the channels L and R, and also allows the timing of the output signals of the respective amplifiers to be varied.

    Abstract translation: 为了实现高音质的音频再现,在多声道A / V放大器中,在立体声再现时,前置扬声器由并行驱动双放大器布置驱动。 在多声道再现模式的情况下,切换电路允许解码器的每个声道的输出信号通过一个对应的每个声道的放大器发送到扬声器。 另一方面,在2声道立体声再现模式的情况下,切换电路允许多个放大器中的至少两个放大器并联连接在解码器的每个通道L和R的输出信号之间 以及每个通道L和R的扬声器,并且还允许各个放大器的输出信号的定时改变。

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