Abstract:
A quality improver for frozen doughs wherein(1) emulsifiers comprising at least one of glycerin fatty acid esters, polyglycerin fatty acid esters, diacetyl tartaric acid esters of monoglyceride, succinic acid esters of monoglyceride, sucrose fatty acid esters, soybean phospholipids, calcium stearoyl lactylate and sodium stearoyl lactylate are mixed with(2) wheat gluten, and the resulted mixture are combined with(3) polymeric substances comprises at least one of alginic acid, sodium alginate, propylene glycol alginate and xanthan gum, and(4) at least one selected from cystine, sodium hyposulfite, protease and lactic acid and lactate are combined therewith.
Abstract:
By the use of one or more beams of chopped, variable-frequency, monochromatic light to illuminate the sample chamber of at least one gas-filled cell including such sample chamber and a reference chamber joined to the sample chamber by a tunnel-like opening or orifice which permits fluid communication between the chambers and incorporating a thermal-flowmeter-type sensor element in the path of flow of the fluid between the chambers of each such cell, the compositional characteristics of one or more samples in each sample chamber can be determined accurately.
Abstract:
A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is exposed being covered with a passivation material. An auxiliary electrode of a conductive member is provided, which is disposed externally of the peripheral edge of the major surface of the semiconductor substrate, and which contacts to the passivation material and is electrically connected to the main electrode. When a voltage for reverse biasing the PN junction is applied between the pair of main electrodes, ions in the passivation material are collected by an electric field established in the passivation material so that the deterioration of the breakdown on the surface of the semiconductor substrate is prevented.
Abstract:
By autocorrelating the sample photoacoustic response signal and the reference photoacoustic response signal, respectively, obtained from the sample and reference cells, of a photoacoustic spectrometer, and cross-correlating the autocorrelated signals to produce a third signal, simple mathematical operations upon the resulting three signals will produce accurate sample analysis free from the effects of the noise arising from sample illumination intensity variations and other random phenomena.
Abstract:
A main thyristor region is formed which comprises four continuous layers of alternately different conductivities consisting of first, second, third and fourth layers, PNPN for example. The main thyristor region constitutes a main thyristor section together with a couple of main electrodes in ohmic contact with the outside ones of the four layers. A pilot thyristor section and an auxiliary pilot thyristor section are constituted by employing the first, second and third layers of the main thyristor section and the main electrode in ohmic contact with the outside of the first layer and further by introducing fifth and sixth layers for forming PH junctions with the third layer. Further, there are provided a gate means for turning on the pilot thyristor section and an auxiliary gate means being in contact with the fifth or sixth layer. The auxiliary pilot thyristor section, main thyristor section and pilot thyristor section are formed in such a way that the respective triggering voltages satisfy the following relation:.vertline.dV/dt.vertline.aux
Abstract translation:形成主晶闸管区域,其包括由例如PNPN组成的由第一层,第二层,第三层和第四层构成的交替不同导电性的四个连续层。 主晶闸管区域与与四层中的外层电阻欧姆接触的一对主电极构成主晶闸管部分。 通过使用主晶闸管部分的第一层,第二层和第三层与主电极与第一层的外部欧姆接触并进一步通过引入第五层和第六层来形成导引晶闸管部分和辅助导频晶闸管部分 PH结点与第三层。 此外,提供了用于导通导频晶闸管部分的栅极装置和与第五或第六层接触的辅助栅极装置。 辅助导频晶闸管部分,主晶闸管部分和导频晶闸管部分形成为使得各个触发电压满足以下关系:| dV / dt|aux <| dV / dt | main,| dV / dt | pil 形成在辅助先导晶闸管部分和第三层之间的PN结的整个外围区域被辅助导频晶闸管部分的栅极装置完全短路。
Abstract:
In an audio signal reproduction device and an audio signal reproduction system of the present invention, an SLch sound is reproduced as a mixed sound that is adjusted appropriately by two speakers 5a, 5d located at Lch and SBLch speaker positions, and an SRch sound is reproduced as a mixed sound that is adjusted appropriately by two speakers 5b, 5e located at Rch and SBRch speaker positions. This configuration can achieve 5.1ch virtual reproduction with high sound quality in which sounds for 5.1 channels of LPCM 7.1ch audio information included in the contents are output as they are and sounds for the remaining 2 channels are reproduced artificially even if speakers compatible with the 5.1ch sound field system are connected.
Abstract:
A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.
Abstract:
A semiconductor device includes a vertical field-effect transistor having a substrate of first conduction type in a substrate base, a drain electrode formed on a first surface of the substrate, an epitaxial layer of first conduction type formed on a second surface of the substrate, a source region of first conduction type formed on the semiconductor base, a source ohmic contact metal film in ohmic contact with the source region, trenches formed from the second surface of the semiconductor base, and a gate region of second conduction type formed along the trenches. The semiconductor device further includes a gate rise metal film in ohmic contact with the draw-out layer of the gate region on the bottom of the trenches and rising to the second surface of the semiconductor base, and a gate draw-out metal film connected to the gate rise metal film from the second surface of the semiconductor base.
Abstract:
A paper machine press roll comprises a core roll and a ceramics sprayed film formed on an outer periphery of the core roll, in which values of Rk and Vo which are characteristic evaluation parameters of a plateau-structure surface of the ceramics sprayed film are Rk≦8.0 μm and Vo≧0.030 mm3/cm2. (Vo=(100−Mr2)×Rvk/2000 (mm3/cm2) where Rk, Mr2 and Rvk are a core level difference, a core load length ratio and a projecting valley depth, respectively which are defined in JIS B0671-2-2002 (ISO13565-2-1996).
Abstract:
For achieving an audio reproduction with high sound quality, in a multi-channel A/V amplifier, front speakers are driven with a parallel-drive bi-amplifier arrangement upon stereo reproduction. In the case of the multi-channel reproduction mode, the switching circuit allows an output signal of each channel of the decoder to be sent to speakers via amplifiers for each channel in one-to-one correspondence. On the other hand, in the case of the 2-channel stereo reproduction mode, the switching circuit allows at least two amplifiers among the plurality of amplifiers to be connected in parallel between the output signal for each of the channels L and R of the decoder and the speakers for each of the channels L and R, and also allows the timing of the output signals of the respective amplifiers to be varied.