公开(公告)号：US4388635A

公开(公告)日：1983-06-14

申请号：US164946

申请日：1980-07-01

申请人： Atsuo Watanabe ,  Masayoshi Naito ,  Tsutomu Yatsuo ,  Masahiro Okamura

发明人： Atsuo Watanabe ,  Masayoshi Naito ,  Tsutomu Yatsuo ,  Masahiro Okamura

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/74

CPC分类号： H01L29/408 ,  H01L29/0638 ,  H01L29/0661

摘要： A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is exposed being covered with a passivation material. An auxiliary electrode of a conductive member is provided, which is disposed externally of the peripheral edge of the major surface of the semiconductor substrate, and which contacts to the passivation material and is electrically connected to the main electrode. When a voltage for reverse biasing the PN junction is applied between the pair of main electrodes, ions in the passivation material are collected by an electric field established in the passivation material so that the deterioration of the breakdown on the surface of the semiconductor substrate is prevented.

摘要翻译： 高击穿电压半导体器件的新颖结构具有一对主表面，其上形成有一对主电极，并且在一对主表面之间形成有PN结被暴露的侧表面覆盖的PN结 钝化材料。 提供了一种导电构件的辅助电极，其设置在半导体衬底的主表面的外围边缘的外侧，并与钝化材料接触并与主电极电连接。 当在一对主电极之间施加用于反向偏置PN结的电压时，通过在钝化材料中建立的电场来收集钝化材料中的离子，从而防止半导体衬底的表面上的击穿劣化 。

公开(公告)号：US4682199A

公开(公告)日：1987-07-21

申请号：US489505

申请日：1983-04-28

申请人： Tsutomu Yatsuo ,  Naohiro Momma ,  Masayoshi Naito ,  Masahiro Okamura

发明人： Tsutomu Yatsuo ,  Naohiro Momma ,  Masayoshi Naito ,  Masahiro Okamura

IPC分类号： H01L29/10 ,  H01L29/74

CPC分类号： H01L29/7428 ,  H01L29/102

摘要： In a high-voltage thyristor comprising a semiconductor body having contiguous pnpn four layers, and opposed anode and cathode electrodes and a gate electrode provided for the semiconductor body, one of p-base and n-base regions having an impurity concentration higher than the other has an impurity concentration which is no more than 8.times.10.sup.15 atoms/cm.sup.3 in the vicinity of a junction between the one base region and an adjacent emitter region and which has a gradually decreasing gradient toward the other contiguous base region. The one base region has a sheet resistance of 500 to 1500 ohms/.quadrature.. The realization of a high-voltage, large-diameter and large-current thyristor can be ensured.

摘要翻译： 在包括具有相邻pnpn四层的半导体本体和相对的阳极和阴极电极以及为半导体本体提供的栅电极的高压晶闸管中，杂质浓度高于另一半导体的p基极和n基区中的一个 在一个基极区域和相邻的发射极区域之间的结的附近具有不大于8×10 15原子/ cm 3的杂质浓度，并且朝向另一个连续的基极区域具有逐渐降低的梯度。 一个基本区域的薄层电阻为500至1500欧姆/平方厘米。 可以确保高电压，大直径和大电流晶闸管的实现。

公开(公告)号：US4542398A

公开(公告)日：1985-09-17

申请号：US621370

申请日：1984-06-18

申请人： Tsutomu Yatsuo ,  Masayoshi Naito ,  Takahiro Nagano ,  Tomio Yasuda ,  Jin Onuki ,  Mitsuo Yanagi ,  Fumio Sato

发明人： Tsutomu Yatsuo ,  Masayoshi Naito ,  Takahiro Nagano ,  Tomio Yasuda ,  Jin Onuki ,  Mitsuo Yanagi ,  Fumio Sato

IPC分类号： H01L29/74 ,  H01L21/52 ,  H01L23/48 ,  H01L23/482 ,  H01L29/08 ,  H01L29/423 ,  H01L29/744

CPC分类号： H01L23/4824 ,  H01L24/72 ,  H01L29/0804 ,  H01L29/42304 ,  H01L29/42308 ,  H01L29/744 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/1301 ,  H01L2924/19043

摘要： A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external control signal to a gate electrode takes the form of a closed-loop shape and the majority of emitter regions are arranged on both sides of the loop. This arrangement ensures that the individual emitter regions, even when the number of the emitter regions is increased to a great extent, can be applied with a uniform control signal, thereby preventing degradation of the turn-off characteristics.

摘要翻译： 多射极型半导体器件，即具有这样一种布置的半导体器件，其中大部分发射极区域被栅极区域分开并被其包围。 在半导体器件中，适于向栅电极施加外部控制信号的部件采取闭环形状，并且大部分发射极区域布置在环路的两侧。 这种布置确保即使当发射极区域的数量增加到很大程度时，各个发射极区域也可以应用均匀的控制信号，从而防止关断特性的劣化。

公开(公告)号：US4404580A

公开(公告)日：1983-09-13

申请号：US172072

申请日：1980-07-24

申请人： Nobutake Konishi ,  Masayoshi Naito ,  Tsutomu Yatsuo ,  Yoshio Terasawa

发明人： Nobutake Konishi ,  Masayoshi Naito ,  Tsutomu Yatsuo ,  Yoshio Terasawa

IPC分类号： H01L29/74 ,  H01L31/111 ,  H01L29/12 ,  H01L29/14

CPC分类号： H01L31/1113 ,  H01L29/74

摘要： A light activated thyristor with high dv/dt capability is provided by disposing first and second thyristors, one a primary and the other a pilot thyristor, in a semiconductor body having first and second major surface. The two thyristors have common first emitter, first base, and second base regions, and have spaced apart second emitter regions adjoining the second major surface of the body. The second emitter region of the second thyristor consists of first and second portions, first portion abutting the second base region of the second thyristor to create a ratarded electrical field. An exposed portion of the second major surface at the second emitter region of the second thyristor activates the second thyristor when electromagnetic radiation of wavelengths corresponding substantially to the energy bandgap of the semiconductor body strikes this exposed portion. The cathode electrode makes ohmic contact with the second emitter region of the first thyristor, and the anode electrode makes ohmic contact with the common first emitter regions. A floating contact also makes ohmic contact to the second emitter region of the second thyristor and the common second base region between the thyristors.

摘要翻译： 具有高dv / dt能力的光激活晶闸管通过在具有第一和第二主表面的半导体本体中设置第一和第二晶闸管，一个一个导电晶闸管和另一个晶闸管。 两个晶闸管具有共同的第一发射极，第一基极和第二基极区域，并且具有邻接主体的第二主表面的间隔开的第二发射极区域。 第二晶闸管的第二发射极区域由第一和第二部分组成，第一部分邻接第二晶闸管的第二基极区域以产生经过电压的电场。 当第二晶闸管的第二发射极区域处的第二主表面的暴露部分激活第二晶闸管，当基本上对应于半导体主体的能带隙的波长的电磁辐射撞击该暴露部分时。 阴极电极与第一晶闸管的第二发射极区域欧姆接触，并且阳极电极与共同的第一发射极区域欧姆接触。 浮动接触还使第二晶闸管的第二发射极区域和晶闸管之间的公共第二基极区域欧姆接触。

公开(公告)号：US4110781A

公开(公告)日：1978-08-29

申请号：US730183

申请日：1976-10-05

申请人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

发明人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

IPC分类号： H01L29/74 ,  G02B6/42 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111 ,  H01L31/167 ,  H02M1/08

CPC分类号： H01L31/0203 ,  G02B6/421 ,  G02B6/4295 ,  H01L31/1113 ,  H01L31/167

摘要： A bidirectional light-activated thyristor is provided which has a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation. The first and second thyristor portions are electrically isolated from each other by an isolating section. The bidirectional light-activated thyristor is provided with a first and a second photo trigger means for triggering the first and second thyristor portions respectively. Means is further provided for blocking a photo-trigger signal from the first photo-trigger means to the second thyristor portion and from the second photo-trigger means to the first thyristor portion.

摘要翻译： 提供了一种双向光激活晶闸管，其具有以预定的位置关系彼此相反平行布置的第一和第二晶闸管部分。 第一和第二晶闸管部分通过隔离部分彼此电隔离。 双向光激活晶闸管设置有分别触发第一和第二晶闸管部分的第一和第二光触发装置。 进一步提供了用于将光触发信号从第一光触发装置阻挡到第二晶闸管部分并且从第二光触发装置阻挡到第一晶闸管部分的装置。

公开(公告)号：US4240091A

公开(公告)日：1980-12-16

申请号：US68571

申请日：1979-08-22

申请人： Tsutomu Yatsuo ,  Atsuo Watanabe ,  Yoshiteru Shimizu

发明人： Tsutomu Yatsuo ,  Atsuo Watanabe ,  Yoshiteru Shimizu

IPC分类号： H01L29/74

CPC分类号： H01L29/7424 ,  H01L29/7428

摘要： A main thyristor region is formed which comprises four continuous layers of alternately different conductivities consisting of first, second, third and fourth layers, PNPN for example. The main thyristor region constitutes a main thyristor section together with a couple of main electrodes in ohmic contact with the outside ones of the four layers. A pilot thyristor section and an auxiliary pilot thyristor section are constituted by employing the first, second and third layers of the main thyristor section and the main electrode in ohmic contact with the outside of the first layer and further by introducing fifth and sixth layers for forming PH junctions with the third layer. Further, there are provided a gate means for turning on the pilot thyristor section and an auxiliary gate means being in contact with the fifth or sixth layer. The auxiliary pilot thyristor section, main thyristor section and pilot thyristor section are formed in such a way that the respective triggering voltages satisfy the following relation:.vertline.dV/dt.vertline.aux

摘要翻译： 形成主晶闸管区域，其包括由例如PNPN组成的由第一层，第二层，第三层和第四层构成的交替不同导电性的四个连续层。 主晶闸管区域与与四层中的外层电阻欧姆接触的一对主电极构成主晶闸管部分。 通过使用主晶闸管部分的第一层，第二层和第三层与主电极与第一层的外部欧姆接触并进一步通过引入第五层和第六层来形成导引晶闸管部分和辅助导频晶闸管部分 PH结点与第三层。 此外，提供了用于导通导频晶闸管部分的栅极装置和与第五或第六层接触的辅助栅极装置。 辅助导频晶闸管部分，主晶闸管部分和导频晶闸管部分形成为使得各个触发电压满足以下关系：| dV / dt|aux <| dV / dt | main，| dV / dt | pil 形成在辅助先导晶闸管部分和第三层之间的PN结的整个外围区域被辅助导频晶闸管部分的栅极装置完全短路。

公开(公告)号：US4216487A

公开(公告)日：1980-08-05

申请号：US879758

申请日：1978-02-21

申请人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

发明人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

IPC分类号： H01L29/74 ,  G02B6/42 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111 ,  H01L31/167 ,  H02M1/08

CPC分类号： H01L31/0203 ,  G02B6/421 ,  G02B6/4295 ,  H01L31/1113 ,  H01L31/167

摘要： Disclosed is a bidirectional light-activated thyristor which comprises a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation, an isolation section for electrically isolating the first and second thyristor portions from each other, a first and a second main electrode for connecting the first and second thyristor portions with each other in inverse-parallel, and a first and a second photo-trigger means for triggering the first and second thyristor portions respectively, wherein the photo-trigger signal from the first photo-trigger means is prevented by the first thyristor portion from reaching the second thyristor portion and the photo-trigger signal from the second photo-trigger means is prevented by the second thyristor portion from reaching the first thyristor portion.

摘要翻译： 公开了一种双向光激活晶闸管，其包括以预定的位置关系彼此相反并联布置的第一和第二晶闸管部分，用于将第一和第二晶闸管部分彼此电隔离的隔离部分，第一和第二晶体管 用于将第一和第二晶闸管部分彼此并联连接的第二主电极和分别触发第一和第二晶闸管部分的第一和第二光触发装置，其中来自第一照片的光触发信号 通过第一晶闸管部分防止触发装置到达第二晶闸管部分，并且通过第二晶闸管部分防止来自第二光触发装置的光触发信号到达第一晶闸管部分。

公开(公告)号：US3943550A

公开(公告)日：1976-03-09

申请号：US534373

申请日：1974-12-19

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L31/111 ,  H01L29/74

CPC分类号： H01L31/1113

摘要： A light-activated semiconductor-controlled rectifier device comprising four layers of PNPN is disclosed in which a part of the edges of the PN junction formed between the intermediate P-type layer and the intermediate N-type layer is exposed on the same side on which the outer P-type layer is exposed, so that a photo-trigger signal is radiated on that exposed part of the edges of the PN junction.

摘要翻译： 公开了一种包括四层PNPN的光激活半导体控制整流器件，其中形成在中间P型层和中间N型层之间的PN结的边缘的一部分暴露在同一侧上， 暴露外部P型层，使得在PN结的边缘的暴露部分上照射触发信号。

公开(公告)号：US4016593A

公开(公告)日：1977-04-05

申请号：US583406

申请日：1975-06-03

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L29/74 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111

CPC分类号： H01L31/0203 ,  H01L31/1113

摘要： A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.

摘要翻译： 双向光闸晶体管装置包括一个包括NPNPN五元组的半导体衬底，其中层叠方向上的两个外层Ns的突起不重叠，以便限定两个四层层，每层具有外层Ns中的任一层作为端层 一对主电极并联连接两个四重层区域，形成在半导体衬底内的两个四重层区域之间并且两个中间PN结露出的凹部和用于将光触发信号施加到凹部的装置 。

公开(公告)号：US20090173949A1

公开(公告)日：2009-07-09

申请号：US12281391

申请日：2006-12-27

申请人： Tsutomu Yatsuo ,  Shinsuke Harada ,  Kenji Fukuda ,  Mitsuo Okamoto

发明人： Tsutomu Yatsuo ,  Shinsuke Harada ,  Kenji Fukuda ,  Mitsuo Okamoto

IPC分类号： H01L29/24 ,  H01L21/336

CPC分类号： H01L21/8213 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7806

摘要： This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type deposit film with a channel region and a base region inverted to an n-type by ion implantation. This built-in Schottky diode region has built therein a Schottky diode of low on-resistance that is formed of a second deficient pan disposed in a high-density gate layer, a second n-type base layer penetrating a low-density p-type deposit layer formed thereon, reaching an n-type drift layer of the second deficient part and attaining its own formation in consequence of inversion of the p-type deposit layer into an n-type by the ion implantation of an n-type impurity from the surface, and a source electrode connected in the manner of forming a Schottky barrier to the surface-exposed part of the second n-type base layer.

摘要翻译： 本发明具有一个电池，该电池结合了内置的肖特基二极管区域，该区域设置在构成在具有沟道区域和基极区域的低密度p型沉积膜中提供的SiC垂直MOSFET的基本单元的至少一部分中 n型离子注入。 该内置的肖特基二极管区域内置有低导通电阻的肖特基二极管，该二极管由设置在高密度栅极层中的第二缺陷盘形成，第二n型基极层穿透低密度p型 沉积层形成在其上，到达第二缺陷部分的n型漂移层，并且由于p型沉积层通过从n型杂质离子注入n型杂质而转变为n型，从而形成其自身的形成 表面以及以与第二n型基底层的表面暴露部分形成肖特基势垒的方式连接的源电极。