公开(公告)号：US20050064639A1

公开(公告)日：2005-03-24

申请号：US10961109

申请日：2004-10-12

申请人： Yoshiyuki Hisada ,  Eiichi Okuno ,  Takeshi Hasegawa

发明人： Yoshiyuki Hisada ,  Eiichi Okuno ,  Takeshi Hasegawa

IPC分类号： H01L21/04 ,  H01L21/314 ,  H01L21/336 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/00 ,  H01L21/31

CPC分类号： H01L29/7828 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7813

摘要： In a method of fabricating a SiC semiconductor device, a surface of a SiC layer (5, 48, 102) is processed into a cleaned surface terminated at Si. An oxide film (7, 49, 105) is formed on the cleaned surface of the SiC layer. The SiC layer with the oxide film is subjected to thermal oxidation at a temperature in a range of 700° C. to 900° C. so that only terminal Si at the cleaned surface of the SiC layer is oxidated and an interface between the oxide film and the SiC layer becomes an SiO2/SiC cleaned interface.

公开(公告)号：US06589337B2

公开(公告)日：2003-07-08

申请号：US09946140

申请日：2001-09-05

申请人： Yoshiyuki Hisada ,  Shinichi Mukainakano ,  Takeshi Hasegawa ,  Ayahiko Ichimiya ,  Tomohiro Aoyama ,  Kiyoshige Kato

发明人： Yoshiyuki Hisada ,  Shinichi Mukainakano ,  Takeshi Hasegawa ,  Ayahiko Ichimiya ,  Tomohiro Aoyama ,  Kiyoshige Kato

IPC分类号： C30B2502

CPC分类号： H01L21/049 ,  C30B29/36 ,  C30B33/00 ,  H01L21/0445 ,  H01L29/1608

摘要： In a process of producing a SiC device, a Si layer is formed on the surface of a SiC substrate, and the Si layer is removed from the surface of the SiC substrate by supplying oxygen gas to the Si layer in a high ambient temperature and a low ambient pressure. The pressure is set at 1×10−2 to 1×10−6 Pa. Thus a cleaned surface of the SiC substrate, not contaminated by carbon and the like in atmospheric air, can be provided. Preferably, the oxygen pressure and temperature are set at about 10−6 Pa and 1000° C. for removing the Si layer. Thereafter, the oxygen is further supplied to raise the pressure to about 104 Pa to form an oxide film on the cleaned SiC substrate. Thus, the SiC substrate is cleaned and then formed with the oxide layer in the same chamber by changing the ambient pressure but without changing the ambient temperature.

公开(公告)号：US06211622B1

公开(公告)日：2001-04-03

申请号：US09435768

申请日：1999-11-08

申请人： Makoto Ryoji ,  Takeshi Hasegawa ,  Masahito Ban ,  Yukitaka Mori

发明人： Makoto Ryoji ,  Takeshi Hasegawa ,  Masahito Ban ,  Yukitaka Mori

IPC分类号： H01J2702

CPC分类号： H01J37/32009 ,  H01J37/3233

摘要： A plurality of extracting orifices 42 for extracting the electron beam from a discharge portion 2 into a plasma process chamber 3 via a compartment 4 are provided radially. A plurality of accelerating electrodes 36, 37 are arranged in the process chamber 3. The electron extracting direction from the extracting orifices 42 is set in substantially parallel with an object surface 35. The number and the arrangement of the accelerating electrodes 36, 37 are set such that a density distribution of the excited plasma has an oprimal state for processing the object. The object having a large area can be processed appropriately.

摘要翻译： 多个提取孔42用于通过隔室4将电子束从排出部分2提取到等离子体处理室3中。 多个加速电极36,37布置在处理室3中。来自提取孔42的电子提取方向被设置为与物体表面35大致平行。加速电极36,37的数量和布置被设定 使得激发的等离子体的密度分布具有用于处理物体的oprimal状态。 可以适当地处理具有大面积的物体。

公开(公告)号：US5629534A

公开(公告)日：1997-05-13

申请号：US691416

申请日：1996-08-02

申请人： Hajime Inuzuka ,  Naomi Awano ,  Takeshi Hasegawa ,  Masahito Mizukoshi

发明人： Hajime Inuzuka ,  Naomi Awano ,  Takeshi Hasegawa ,  Masahito Mizukoshi

IPC分类号： H01L31/12 ,  H01L31/173 ,  H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44

CPC分类号： H01L31/173 ,  H04B10/802

摘要： There is provided a monolithic photocoupler which is easy to integrate. An SOI structure is formed by providing a first insulation layer on a silicon substrate. The semiconductor single crystal region is further divided by trench insulation layers into separate regions. Light emitting elements are formed on one of the separated semiconductor single crystal region and light receiving elements are formed on the other semiconductor single crystal region. The light emitting elements are obtained by forming light emitting diodes made of GaAs or the like on the substrate using a heterogeneous growth process. An optical waveguide made of a material which is optically transparent and electrically insulative such as a TiO.sub.2 film on each pair of light emitting and light receiving elements. The insulation layers constituted by SiO.sub.2 layers have a refractive index smaller that of the active layer of the substrate. Thus, the light emitted by the light emitting elements is almost entirely reflected without leaking out, and the light which has entered the optical waveguides reaches the light receiving elements without leaking out except those components which have entered perpendicularly or at an angle close thereto.

摘要翻译： 提供了一种易于集成的单片光电耦合器。 通过在硅衬底上设置第一绝缘层来形成SOI结构。 半导体单晶区域进一步被沟槽绝缘层划分成不同的区域。 发光元件形成在分离的半导体单晶区域中的一个上，并且在另一个半导体单晶区域上形成光接收元件。 通过使用异质生长工艺在衬底上形成由GaAs等制成的发光二极管来获得发光元件。 一种光学波导，由光学透明和电绝缘的材料制成，例如在每对发光和光接收元件上的TiO 2膜。 由SiO 2层构成的绝缘层的折射率小于衬底的有源层的折射率。 因此，由发光元件发出的光几乎完全被反射而不会泄漏，进入光波导的光到达光接收元件而不会泄漏，除了垂直或以其附近的角度输入的那些元件。

公开(公告)号：US5047439A

公开(公告)日：1991-09-10

申请号：US279057

申请日：1988-12-02

申请人： Katuya Sano ,  Takeshi Hasegawa ,  Kiyoshi Kittaka ,  Atushi Sakuraoka ,  Katsuji Kitagawa ,  Tetsuo Miyake ,  Kazutomo Moriguchi

发明人： Katuya Sano ,  Takeshi Hasegawa ,  Kiyoshi Kittaka ,  Atushi Sakuraoka ,  Katsuji Kitagawa ,  Tetsuo Miyake ,  Kazutomo Moriguchi

IPC分类号： B05D7/14 ,  C08G18/40 ,  C08G18/62 ,  C08G18/80 ,  C08G18/86 ,  C08J9/06 ,  C09D5/46 ,  C09D175/04

CPC分类号： C08J9/06 ,  B05D7/14 ,  C08G18/4063 ,  C08G18/6212 ,  C08G18/625 ,  C08G18/8061 ,  C08G18/8074 ,  C08G18/86 ,  C09D175/04 ,  C08G2150/20 ,  C08G2150/60 ,  C08J2375/04

摘要： An expandable, powder coating composition is disclosed which comprises (a) a thermoplastic resin containing a hydroxyl group-containing polymer, (b) a cross-linking agent containing a polyisocyanate compound which is capable of reacting with the hydroxyl groups of the polymer to crosslink the polymer at a temperature higher than the melting point of the thermoplastic resin and which is solid at room temperature, and (c) a blowing agent capable of decomposing and generating a gas when heated to a temperature higher than the melting point of the thermoplastic resin. Powder coating with the coating composition can give a heat-insulating, foamed sheath or lining over the surface of a metal tube or box to be used in air conditioners.

摘要翻译： 公开了一种可膨胀的粉末涂料组合物，其包含（a）含有羟基的聚合物的热塑性树脂，（b）含有多异氰酸酯化合物的交联剂，其能够与聚合物的羟基反应以交联 所述聚合物的温度高于所述热塑性树脂的熔点并且在室温下为固体，和（c）当加热至高于所述热塑性树脂的熔点的温度时能够分解和产生气体的发泡剂 。 具有涂料组合物的粉末涂料可以在用于空调的金属管或箱的表面上产生隔热，发泡的护套或衬里。

公开(公告)号：USD303982S

公开(公告)日：1989-10-10

申请号：US910774

申请日：1986-09-23

申请人： Fumiya Matsuoka ,  Takeshi Hasegawa

设计人： Fumiya Matsuoka ,  Takeshi Hasegawa

公开(公告)号：USD298545S

公开(公告)日：1988-11-15

申请号：US852491

申请日：1986-04-15

申请人： Eiichi Yoshioka ,  Keiko Takemata ,  Akihiko Kobayashi ,  Takeshi Hasegawa ,  Shigeki Mori

设计人： Eiichi Yoshioka ,  Keiko Takemata ,  Akihiko Kobayashi ,  Takeshi Hasegawa ,  Shigeki Mori

公开(公告)号：US20170359546A1

公开(公告)日：2017-12-14

申请号：US15665459

申请日：2017-08-01

申请人： Keiji OHMURA ,  Takeshi Hasegawa

发明人： Keiji OHMURA ,  Takeshi Hasegawa

IPC分类号： H04N5/445 ,  G06T7/00 ,  H04N7/18

CPC分类号： H04N5/44504 ,  G06K9/00718 ,  G06K9/00771 ,  G06K9/6253 ,  G06T7/001 ,  G09G5/00 ,  G09G5/14 ,  G09G5/377 ,  H04N5/44591 ,  H04N7/18 ,  H04N7/181 ,  H04N7/188

摘要： An image processing device includes a display device, a video display controller configured to display video data imaged by an imaging device in a predetermined display region to be displayed by the display device, and a region display controller configured to display a plurality of display elements representing determination regions based on a plurality of types of determination functions with respect to the video data in the display region by superimposing the plurality of display elements on the video data in aspects different from each other.

公开(公告)号：US20090127746A1

公开(公告)日：2009-05-21

申请号：US12339118

申请日：2008-12-19

申请人： Yoshinobu NAKADA ,  Hiroyuki Shiraki ,  Takeshi Hasegawa

发明人： Yoshinobu NAKADA ,  Hiroyuki Shiraki ,  Takeshi Hasegawa

IPC分类号： B29C71/02

CPC分类号： F27D5/0037 ,  F27B17/0025 ,  H01L21/324 ,  H01L21/67109 ,  Y10T279/23

摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.

摘要翻译： 在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。 此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度 彼此围绕中心。 利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

公开(公告)号：US20080200689A1

公开(公告)日：2008-08-21

申请号：US12007776

申请日：2008-01-15

申请人： Fumitaka Goto ,  Noriaki Takemura ,  Tadaaki Otani ,  Takeshi Hasegawa ,  Hidetsugu Tsubouchi ,  Naoto Utsumi ,  Shigekazu Fujita ,  Hideaki Kuroda ,  Takuya Shitsuta ,  Hirofumi Sasaki

发明人： Fumitaka Goto ,  Noriaki Takemura ,  Tadaaki Otani ,  Takeshi Hasegawa ,  Hidetsugu Tsubouchi ,  Naoto Utsumi ,  Shigekazu Fujita ,  Hideaki Kuroda ,  Takuya Shitsuta ,  Hirofumi Sasaki

IPC分类号： C07D233/92

CPC分类号： C07D233/92

摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.

摘要翻译： 本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基 取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH 2的基团， X是卤素原子或式-S（O）n R 1）的基团）及其制备方法。 式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。