公开(公告)号：US20130206592A1

公开(公告)日：2013-08-15

申请号：US13881117

申请日：2011-12-19

申请人： Atsutoshi Arakawa ,  Yuki Ikeda

发明人： Atsutoshi Arakawa ,  Yuki Ikeda

IPC分类号： C23C14/14 ,  C23C14/08

CPC分类号： C23C14/14 ,  C23C14/08 ,  C23C14/3414 ,  G11B5/851 ,  H01F41/183

摘要： Provided is a ferromagnetic sputtering target having a metal composition comprising 20 mol % or less of Cr, 5 mol % or more of Pt, and the balance of Co, wherein the target includes a metal base (A) and two different phases (B) and (C) in the metal base (A), the phase (B) being a Co—Ru alloy phase containing 30 mol % or more of Ru, and the phase (C) being a metal or alloy phase primarily composed of Co or a Co alloy. The present invention improves the leakage magnetic flux to provide a ferromagnetic sputtering target that can perform stable discharge with a magnetron sputtering device.

摘要翻译： 本发明提供一种具有包含20mol％以下的Cr，5mol％以上的Pt，余量为Co的金属组合物的铁磁性溅射靶，其中，所述靶包含金属基体（A）和两个不同相（B） 和（C）在金属基体（A）中，相（B）是含有30mol％以上的Ru的Co-Ru合金相，相（C）是主要由Co或 Co合金。 本发明改进了漏磁通量，提供了可以用磁控管溅射装置进行稳定放电的铁磁性溅射靶。

公开(公告)号：US20080090328A1

公开(公告)日：2008-04-17

申请号：US11984942

申请日：2007-11-26

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L21/10

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US06791257B1

公开(公告)日：2004-09-14

申请号：US09890774

申请日：2001-08-03

申请人： Kenji Sato ,  Atsutoshi Arakawa ,  Mikio Hanafusa ,  Akira Noda

发明人： Kenji Sato ,  Atsutoshi Arakawa ,  Mikio Hanafusa ,  Akira Noda

IPC分类号： H01J162

CPC分类号： H01L33/28 ,  H01L33/0008 ,  H01S5/3059 ,  H01S5/327

摘要： An electro luminescence device comprises a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table. It is produced by providing a substrate having a low dislocation density or a low inclusion density; forming a pn junction by thermally diffusing an element converting the substrate of a first conduction type into the one of a second conduction type from a front surface of the substrate; and forming electrodes on front and rear of the substrate. A diffusion source including an element converting the substrate of a first conduction type into the one of a second conduction type is disposed on the front surface of the substrate, preventing forming of a defect compensating an impurity level which is formed in the substrate by the element during a diffusion process, and gettering impurity on the front surface of the substrate by the diffusion source. Thereby, the conduction type of the Group II-VI compound semiconductor can be controlled and the electro luminescence device having superior light emission characteristics can be stably produced.

摘要翻译： 电致发光器件包括在周期表中包含第12族（2B）元素和第16族元素（6B）元素的化合物半导体晶体基底。 通过提供具有低位错密度或低夹层密度的基材来生产; 通过将从第一导电类型的衬底转换为基片的前表面的第二导电类型的元件热元件形成pn结; 以及在基板的前后形成电极。 将包括将第一导电类型的衬底转换为第二导电类型的衬底的元件的扩散源设置在衬底的前表面上，防止形成补偿由衬底中的元件形成的杂质水平的缺陷 在扩散过程中，通过扩散源在衬底的前表面上吸杂杂质。 由此，可以控制II-VI族化合物半导体的导电类型，并且可以稳定地制造具有优异的发光特性的电致发光器件。