公开(公告)号：US08723760B2

公开(公告)日：2014-05-13

申请号：US11832307

申请日：2007-08-01

申请人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

发明人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC分类号： G09G3/30

CPC分类号： H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.

摘要翻译： 实现高开口率并且图像质量几乎不受TFT的特性变化影响的A发光器件。 在像素部分中不设置大的保持电容器Cs，而是增加了沟道长度和沟道宽度，并且将沟道电容用作Cs。 选择沟道长度非常大于沟道宽度以改善饱和区域中的电流特性，并且将高VGS施加到驱动TFT以获得期望的漏极电流。 因此，驱动TFT的漏极电流几乎不受阈值电压的变化的影响。 此外，在布置像素时，布线布置在分隔壁下方，并且驱动TFT布置在布线下方，以避免开口率的降低，尽管驱动TFT的尺寸增加。 在3晶体管像素的情况下，开关TFT和擦除TFT被线性布置以进一步增加开口率。

公开(公告)号：US07592980B2

公开(公告)日：2009-09-22

申请号：US10453940

申请日：2003-06-04

申请人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

发明人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

IPC分类号： G09G3/30 ,  G09G3/10

CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

公开(公告)号：US20090179549A1

公开(公告)日：2009-07-16

申请号：US12346181

申请日：2008-12-30

申请人： Hiroko Abe ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada ,  Shunpei Yamazaki

发明人： Hiroko Abe ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada ,  Shunpei Yamazaki

IPC分类号： H01J1/62

CPC分类号： H01L51/5281 ,  G02F1/133603 ,  G02F2001/133342 ,  G09G3/3225 ,  G09G2300/046 ,  G09G2300/0842 ,  G09G2310/0251 ,  H01L27/322 ,  H01L27/3246 ,  H01L51/5016 ,  H01L51/5036 ,  H01L2251/5323

摘要： It is an object of the invention to achieve weight saving and downsizing of an electronic apparatus, in particular a portable electronic apparatus while enlarging a display screen thereof. The invention provides an electronic apparatus using a light emitting device which includes a light emitting element, a color filter provided on either side of an anode or a cathode of the light emitting element, and two polarizers sandwiching the light emitting element and the color filter, in which the anode and the cathode transmit light, deflection angles of the two polarizers are different from each other, and light obtained from the light emitting element is white.

摘要翻译： 本发明的一个目的是在扩大其显示屏的同时实现电子设备，特别是便携式电子设备的减轻重量和小型化。 本发明提供了一种使用发光装置的电子装置，其包括发光元件，设置在发光元件的阳极或阴极的两侧的滤色器和夹着发光元件和滤色器的两个偏振器， 其中阳极和阴极透射光，两个偏振器的偏转角彼此不同，并且从发光元件获得的光是白色的。

公开(公告)号：US20090033600A1

公开(公告)日：2009-02-05

申请号：US12243637

申请日：2008-10-01

申请人： Mitsuaki Osame ,  Aya Anzai ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

发明人： Mitsuaki Osame ,  Aya Anzai ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

IPC分类号： G09G3/30

CPC分类号： G09G3/32 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/027 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/043 ,  G09G2320/045 ,  H01L33/0041

摘要： A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

摘要翻译： 提供了通过抑制初始发光元件劣化而实现长寿命并能够进行高占空比驱动的发光器件。 通过形成反向偏置电源线（112）和反向偏压TFT（108），一次对一个EL元件（109）施加反向偏置。 因此，可以与图像信号的写入，发光，擦除等的操作同步地执行反向偏置应用。 因此，在保持与常规驱动方法相同的占空比的情况下，可以实现反向偏置应用。

公开(公告)号：US20080170005A1

公开(公告)日：2008-07-17

申请号：US11832307

申请日：2007-08-01

申请人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

发明人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC分类号： G09G3/30

CPC分类号： H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.

摘要翻译： 实现高开口率并且图像质量几乎不受TFT的特性变化影响的A发光器件。 在像素部分中不设置大的保持电容器Cs，而是增加了沟道长度和沟道宽度，并且将沟道电容用作Cs。 通道长度选择为非常大于沟道宽度以改善饱和区域中的电流特性，并且向驱动TFT施加高V S GS以获得所需的漏极电流。 因此，驱动TFT的漏极电流几乎不受阈值电压的变化的影响。 此外，在布置像素时，布线布置在分隔壁下方，并且驱动TFT布置在布线下方，以避免开口率的降低，尽管驱动TFT的尺寸增加。 在3晶体管像素的情况下，开关TFT和擦除TFT被线性布置以进一步增加开口率。

公开(公告)号：US20050255617A1

公开(公告)日：2005-11-17

申请号：US11121073

申请日：2005-05-04

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Mitsuaki Osame ,  Aya Anzai ,  Hiromichi Godo ,  Tomoya Futamura

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Mitsuaki Osame ,  Aya Anzai ,  Hiromichi Godo ,  Tomoya Futamura

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01L21/00 ,  H01L21/77 ,  H01L27/32 ,  H01L51/52 ,  H05B33/10

CPC分类号： H01L51/5262 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258

摘要： In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to overlap with at least a part of the semiconductor layer, and a portion to be a pixel portion of the gate insulating film and the second base insulating film is doped with at least one conductive type impurities. An opening portion is formed by selectively etching the gate insulating film and second base insulating film that are each doped with impurities. The first base insulating film is exposed in a bottom face of the opening portion. Subsequently, an insulating film is formed to cover the opening portion, the gate insulating film, and the gate electrode, and a light emitting element is formed over the insulating film to overlap with at least a part of the opening portion.

摘要翻译： 在具有发光元件的显示装置的制造方法中，在衬底上依次形成第一基底绝缘膜，第二基底绝缘膜，半导体层和栅极绝缘膜。 栅极电极形成在栅极绝缘膜上方以与半导体层的至少一部分重叠，栅极绝缘膜和第二基底绝缘膜的像素部分的一部分被掺杂有至少一种导电类型的杂质 。 通过选择性地蚀刻各自掺杂有杂质的栅极绝缘膜和第二基底绝缘膜来形成开口部。 第一基底绝缘膜在开口部的底面露出。 随后，形成绝缘膜以覆盖开口部分，栅极绝缘膜和栅电极，并且在绝缘膜上形成发光元件以与开口部分的至少一部分重叠。

公开(公告)号：US20050231122A1

公开(公告)日：2005-10-20

申请号：US11147317

申请日：2005-06-08

申请人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

发明人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC分类号： G09G3/32 ,  H01L27/32 ,  G09G3/10 ,  G09G3/36

CPC分类号： H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.

公开(公告)号：US20050205880A1

公开(公告)日：2005-09-22

申请号：US11079598

申请日：2005-03-15

申请人： Aya Anzai ,  Jun Koyama ,  Hajime Kimura ,  Shunpei Yamazaki ,  Yoshifumi Tanada ,  Mitsuaki Osame

发明人： Aya Anzai ,  Jun Koyama ,  Hajime Kimura ,  Shunpei Yamazaki ,  Yoshifumi Tanada ,  Mitsuaki Osame

IPC分类号： G09G3/20 ,  G09G3/30 ,  G09G3/32 ,  H01L27/12 ,  H01L27/15 ,  H01L27/32 ,  H05B33/08

CPC分类号： G09G3/3258 ,  G09G3/2022 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2310/0256 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/02 ,  G09G2330/021 ,  H01L27/12 ,  H01L27/3211 ,  H01L27/3244 ,  H01L2251/568

摘要： A low power consumption display device and an electronic appliances are provided. The display device of the invention comprises a pixel region including a plurality of pixels, a source driver, a first gate driver, and a second gate driver. Each of the plurality of pixels includes a light emitting element, a first transistor for controlling a video signal input to the pixel, a second transistor for controlling emission/non-emission of the light emitting element.

摘要翻译： 提供了低功耗显示装置和电子设备。 本发明的显示装置包括包括多个像素的像素区域，源极驱动器，第一栅极驱动器和第二栅极驱动器。 多个像素中的每一个包括发光元件，用于控制输入到像素的视频信号的第一晶体管，用于控制发光元件的发射/不发光的第二晶体管。

公开(公告)号：US08570256B2

公开(公告)日：2013-10-29

申请号：US13570478

申请日：2012-08-09

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Mitsuaki Osame ,  Takashi Hamada ,  Tamae Takano ,  Yu Yamazaki ,  Aya Anzai

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Mitsuaki Osame ,  Takashi Hamada ,  Tamae Takano ,  Yu Yamazaki ,  Aya Anzai

IPC分类号： G09G3/30 ,  H01L21/70

CPC分类号： H01L27/1214 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0233 ,  H01L27/3262 ,  H01L2251/5323

摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.

摘要翻译： 一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

公开(公告)号：US07834355B2

公开(公告)日：2010-11-16

申请号：US12348574

申请日：2009-01-05

申请人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki ,  Satoshi Seo ,  Hiroko Abe

发明人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki ,  Satoshi Seo ,  Hiroko Abe

IPC分类号： H01L29/04

CPC分类号： G09G3/3233 ,  G09G3/006 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0256 ,  G09G2310/0275 ,  G09G2310/061 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/02 ,  G09G2330/12 ,  H01L27/3244 ,  H01L2251/5323

摘要： A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L1 and the channel width W1 of the driving transistor, and the channel length L2 and the channel width W2 of the limiter transistor satisfy L1/W1:L2/W2=1:2 to 1:10.

摘要翻译： 可以抑制由于环境温度的变化而随着时间的变化而影响发光元件的电流的变化的显示装置。 本发明的显示装置具有发光元件，与发光元件串联连接的驱动晶体管，监视发光元件，与监视发光元件串联连接的限幅晶体管，用于供给 到监视发光元件的恒定电流，以及用于输出等于输入电位的电位的电路。 发光元件的第一电极通过驱动晶体管连接到电路的输出端，并且监控发光元件的第一电极通过限幅晶体管连接到电路的输入端。 驱动晶体管的沟道长度L1和沟道宽度W1以及限制晶体管的沟道长度L2和沟道宽度W2满足L1 / W1：L2 / W2 = 1:2至1:10。