Polythiophenes and devices thereof
    31.
    发明授权
    Polythiophenes and devices thereof 有权
    聚噻吩及其装置

    公开(公告)号:US07256418B2

    公开(公告)日:2007-08-14

    申请号:US10231841

    申请日:2002-08-29

    IPC分类号: H01L35/24

    摘要: An electronic device containing a polythiophene derived from a monomer segment or monomer segments containing two 2,5-thienylene segments, (I) and (II), and an optional divalent linkage D wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.

    摘要翻译: 含有衍生自单体链段的聚噻吩的电子装置或含有两个2,5-亚噻吩基链段(I)和(II)的单体链段和任选的二价键D,其中A是侧链; B是氢或侧链; 和D是二价键,其中单体链段中的A取代的亚噻吩基单元(I)的数目为约1至约10,B-取代的亚噻吩基单元(II)的数目为0至约5, 并且二价键D的数目为0或1。

    Dielectric materials for electronic devices
    32.
    发明授权
    Dielectric materials for electronic devices 有权
    用于电子设备的电介质材料

    公开(公告)号:US07170093B2

    公开(公告)日:2007-01-30

    申请号:US10982472

    申请日:2004-11-05

    IPC分类号: H01L29/04

    摘要: A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.

    摘要翻译: 本文提供由甲硅烷氧基/金属氧化物杂化组合物制备的电介质材料,以及包括这种介电材料的电子器件如薄膜晶体管。 甲硅烷氧基/金属氧化物杂化组合物包含甲硅烷氧基组分,例如硅氧烷或倍半硅氧烷。 甲硅烷氧基/金属氧化物杂化组合物可用于使用溶液沉积技术制备用于薄膜晶体管的电介质层。

    Polymers
    33.
    发明授权
    Polymers 有权
    聚合物

    公开(公告)号:US07169883B2

    公开(公告)日:2007-01-30

    申请号:US10646196

    申请日:2003-08-22

    IPC分类号: C08G75/00

    摘要: A thienylene-arylene polymer comprised of a repeating segment containing at least one 2,5-thienylene unit selected from (I) and (II), and from about one to about three arylene units selected from (IIIa), (IIIb), and/or (IIIc) wherein R is an alkyl or an alkoxy; R′ is halogen, alkyl, or alkoxy, and a and b represent the number of Rs.

    摘要翻译: 由含有至少一个选自(I)和(II)的2,5-亚噻吩基单元的重复链段和选自(IIIa),(IIIb)和(IIIb)中的约1至约3个亚芳基的亚噻吩基亚芳基聚合物 /或(IIIc)其中R是烷基或烷氧基; R'是卤素,烷基或烷氧基,a和b表示Rs的数目。

    Process for depositing gelable composition that includes dissolving gelable composition in liquid with agitating to disrupt gelling
    34.
    发明授权
    Process for depositing gelable composition that includes dissolving gelable composition in liquid with agitating to disrupt gelling 有权
    用于沉积可胶凝组合物的方法,其包括将可胶凝组合物溶解在液体中,搅拌以破坏胶凝

    公开(公告)号:US06890868B2

    公开(公告)日:2005-05-10

    申请号:US10273896

    申请日:2002-10-17

    摘要: A process including: (a) selecting a composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation; (b) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (c) lowering the temperature of the composition from the elevated temperature to the first lower temperature; (d) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature: (e) depositing a layer of the composition wherein the composition is at a second lower temperature lower than the elevated temperature; and (f) drying at least partially the layer.

    摘要翻译: 一种方法,包括:(a)选择包含聚合物和液体的组合物,其中聚合物在室温下在液体中表现出较低的溶解度,但在升高的温度下在液体中表现出较高的溶解度,其中当升高的温度为 在不搅拌的情况下降至第一较低温度; (b)在升高的温度下将聚合物的至少一部分溶解在液体中; (c)将组合物的温度从升高的温度降低到第一较低温度; (d)搅拌组合物以破坏任何胶凝,其中搅拌在组合物的升高温度降低到第一较低温度之前,同时或之后的任何时间开始:(e)沉积组合物层 其中所述组合物处于低于升高的温度的第二较低温度; 和(f)至少部分干燥该层。

    Field effect transistor
    36.
    发明授权
    Field effect transistor 有权
    场效应晶体管

    公开(公告)号:US06774393B2

    公开(公告)日:2004-08-10

    申请号:US10397561

    申请日:2003-03-25

    IPC分类号: H01L3524

    摘要: A field effect transistor composed of: an insulating layer; a gate electrode; a semiconductor layer including an organic semiconductor material and a binder resin; a source electrode; and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.

    摘要翻译: 一种场效应晶体管,包括:绝缘层;栅电极;包含有机半导体材料和粘合剂树脂的半导体层;源电极; 和漏电极,其中绝缘层,栅电极,半导体层,源电极和漏极电极是任何顺序的,只要栅电极和半导体层都接触绝缘层,并且源电极和 漏电极都接触半导体层。