摘要:
A process including: (a) selecting a composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation; (b) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (c) lowering the temperature of the composition from the elevated temperature to the first lower temperature; (d) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature: (e) depositing a layer of the composition wherein the composition is at a second lower temperature lower than the elevated temperature; and (f) drying at least partially the layer.
摘要:
A composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation, wherein the viscosity of the composition results from a process comprising (a) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (b) lowering the temperature of the composition from the elevated temperature to the first lower temperature; and (c) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature, wherein the amount of the polymer dissolved in the liquid at the elevated temperature ranges from about 0.2% to about 5% based on the total weight of the polymer and the liquid.
摘要:
A thin film transistor including: an insulating layer; a gate electrode; a semiconductor layer including coalesced structurally ordered polymer aggregates of a self-organizable polymer, wherein the self-organizable polymer is of a type capable of gelling; a source electrode; and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.
摘要:
Polythiophenes of the formula wherein R and R′ are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z represents the number of groups, and wherein the sum of x and y represents the number of groups; m represents the number of segments; and n represents the degree of polymerization.
摘要:
An electronic device includes a semiconductor layer in contact with a number of electrodes, wherein the semiconductive layer includes a compound wherein either or both of the following geometric isomers of the compound are present: wherein: n is 1, 2 or 3 for the polycyclic moiety; and R1 and R2 are independently selected from the group consisting of a hydrocarbon ring and a heterocyclic group, wherein R1 and R2 are the same or different hydrocarbon ring, the same or different heterocyclic group, or one of R1 and R2 is the hydrocarbon ring and the other the heterocyclic group.
摘要翻译:电子器件包括与多个电极接触的半导体层,其中半导体层包括其中存在化合物的以下几何异构体之一或两者的化合物:其中:对于多环部分,n为1,2或3 ; R 1和R 2独立地选自烃环和杂环基,其中R 1和R 2是相同或不同的烃环,相同或不同的杂环基,或者R 1和R 2中的一个是烃环和 其他杂环基。
摘要:
Polythiophenes of the formula wherein R and R′ are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z is 0 or 1, and wherein the sum of x and y is greater than zero; m represents the number of segments; and n represents the degree of polymerization.
摘要:
An electronic device containing a polythiophene of Formula (I) wherein R and R′ are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z is 0 or 1, and wherein the sum of x and y is greater than about zero; m represents the number of segments; and n represents the degree of polymerization.
摘要:
A field effect transistor composed of: an insulating layer; a gate electrode; a semiconductor layer including an organic semiconductor material and a binder resin; a source electrode; and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.
摘要:
An imaging member comprised of a photoconductive layer, and a protective copolyurethane overcoating of the formula: ##STR1## wherein A is a trivalent group; A' is a bivalent group; R is selected from the group consisting of alkylene, substituted alkylene, arylene, and substituted arylene; x and y are number mole fractions of from about 0.05 to about 0.95 subsequent to the provision that the sum of x+y is equal to 1.0. Also disclosed are processes for the preparation of the aforementioned copolyurethanes.
摘要:
Disclosed are photoresponsive imaging members comprised of sulfur incorporated dicyanomethylenefluorene carboxylate electron transporting compounds of the formula: ##STR1## wherein S is sulfur, A is a spacer group selected from the group consisting of alkylene groups, arylene groups, substituted alkylene groups, and substituted arylene groups, and B is selected from the group consisting of alkyl groups, aryl groups, substituted alkyl groups, and substituted aryl groups.