摘要:
A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid deposited one or more zinc oxide precursor compositions.
摘要:
An electronic device including: (a) a semiconductor layer including crystalline zinc oxide; and (b) an electrode including a suitable amount of zinc, indium, or a mixture thereof.
摘要:
A method is disclosed for making a metal electrode which minimizes the contact resistance between it and an organic semiconductor. Acid-stabilized metal nanoparticles are deposited upon a substrate and annealed. This creates a metal electrode and releases acid. Upon deposition of semiconductor and subsequent annealing, the acid diffuses from the electrode into the semiconductor layer and acts as a dopant, minimizing the contact resistance. The use of oleic acid-stabilized silver nanoparticles is demonstrated.
摘要:
An electronic device containing a polythiophene derived from a monomer segment or monomer segments containing two 2,5-thienylene segments, (I) and (II), and an optional divalent linkage D wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.
摘要:
A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.
摘要:
A thienylene-arylene polymer comprised of a repeating segment containing at least one 2,5-thienylene unit selected from (I) and (II), and from about one to about three arylene units selected from (IIIa), (IIIb), and/or (IIIc) wherein R is an alkyl or an alkoxy; R′ is halogen, alkyl, or alkoxy, and a and b represent the number of Rs.
摘要:
A process including: (a) selecting a composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation; (b) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (c) lowering the temperature of the composition from the elevated temperature to the first lower temperature; (d) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature: (e) depositing a layer of the composition wherein the composition is at a second lower temperature lower than the elevated temperature; and (f) drying at least partially the layer.
摘要:
A polythiophene wherein the monomer segments thereof contain: wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent segment, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent segments D is 0 or 1.
摘要:
A field effect transistor composed of: an insulating layer; a gate electrode; a semiconductor layer including an organic semiconductor material and a binder resin; a source electrode; and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.
摘要:
An electroluminescent device comprised of an anode, a hole transporting layer, a light emitting layer, and a cathode, wherein said light emitting layer contains a component of the formula ##STR1## wherein Ar.sup.1, Ar.sup.2, Ar.sup.3, and Ar.sup.4 are each independently aryl or optionally aliphatic; R.sup.1 and R.sup.2 are independently selected from the group consisting of hydrogen, aliphatic, halogen, and cyano; L is a suitable linking group; and n is a number of from 0 to about 3.