公开(公告)号：US20080290142A1

公开(公告)日：2008-11-27

申请号：US11752382

申请日：2007-05-23

申请人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

发明人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC分类号： B23K35/24 ,  B23K101/36 ,  B23K31/02

CPC分类号： B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduce or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state. Further, the addition of a trace amount of nucleation sites within the composition facilitates control over the number, size, and orientations of primary intermetallic compounds in tin rich crystallite grains. Moreover, trace amounts of one or more solid and/or insoluble nucleating modifiers within a given volume of solder reduces the size of average crystallites within the composition.

摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以微量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。 此外，在组合物中添加微量的成核位点有助于控制富锡微晶颗粒中初级金属间化合物的数量，尺寸和取向。 此外，在给定体积的焊料中痕量的一种或多种固态和/或不溶性成核改性剂减少了组合物内平均微晶的尺寸。

公开(公告)号：US07247946B2

公开(公告)日：2007-07-24

申请号：US11037970

申请日：2005-01-18

申请人： John Bruley ,  Roy A. Carruthers ,  Lynne Marie Gignac ,  Chao-Kun Hu ,  Eric Gerhard Liniger ,  Sandra Guy Malhotra ,  Stephen M. Rossnagel

发明人： John Bruley ,  Roy A. Carruthers ,  Lynne Marie Gignac ,  Chao-Kun Hu ,  Eric Gerhard Liniger ,  Sandra Guy Malhotra ,  Stephen M. Rossnagel

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76849 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： Disclosed is a procedure to coat the free surface of Cu damascene lines by a 1-5 nm thick element prior to deposition of the inter-level dielectric or dielectric diffusion barrier layer. The coating provides protection against oxidation, increases the adhesion strength between the Cu and dielectric, and reduces interface diffusion of Cu. In addition, the thin cap layer further increases electromigration Cu lifetime and reduces the stress induced voiding. The selective elements can be directly deposited onto the Cu embedded within the under layer dielectric without causing an electric short circuit between the Cu lines. These chosen elements are based on their high negative reduction potentials with oxygen and water, and a low solubility in and formation of compounds with Cu.

摘要翻译： 公开了在沉积层间电介质或电介质扩散阻挡层之前，通过1-5nm厚的元件涂覆Cu镶嵌线的自由表面的步骤。 涂层提供防氧化保护，增加Cu和介电层之间的粘合强度，并减少Cu的界面扩散。 此外，薄盖层进一步增加电迁移Cu寿命，并减少应力引起的空隙。 选择元件可以直接沉积在嵌入在下层电介质中的Cu上，而不会在Cu线之间引起电短路。 这些选择的元素是基于它们具有氧和水的高的负还原电位，以及与Cu的化合物的低溶解度和形成。