公开(公告)号：US20100097861A1

公开(公告)日：2010-04-22

申请号：US12252727

申请日：2008-10-16

申请人： Deepanshu Dutta ,  Jeffrey W. Lutze

发明人： Deepanshu Dutta ,  Jeffrey W. Lutze

IPC分类号： G11C16/04 ,  G11C16/06

CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/3418 ,  G11C16/3454 ,  G11C2211/5621 ,  G11C2211/5648

摘要： A multiple pass programming scheme is optimized using capacitive coupling in the word line to word line direction during program-verify operations. A different pass voltage is used in different programming passes on an adjacent word line of a selected word line which is being verified. In particular, a lower pass voltage can be used in a first pass than in a second pass. The programming process may involve a word line look ahead or zigzag sequence in which WLn is programmed in a first pass, followed by WLn+1 in a first pass, followed by WLn in a second pass, followed by WLn+1 in a second pass. An initial programming pass may be performed before the first pass in which storage elements are programmed to an intermediate state and/or to a highest state.

摘要翻译： 在编程验证操作期间，使用字线到字线方向的电容耦合来优化多通道编程方案。 在正在验证的所选择的字线的相邻字线上的不同的编程遍中使用不同的通过电压。 特别地，可以在第一遍中比在第二遍中使用较低通过电压。 编程过程可以包括字线前视或之字形序列，其中WLn在第一遍中编程，其次是第一遍中的WLn + 1，之后是第二遍中的WLn，之后是第二遍中的WLn + 1 。 可以在其中存储元件被编程到中间状态和/或最高状态的第一遍之前执行初始编程遍。

公开(公告)号：US08773902B2

公开(公告)日：2014-07-08

申请号：US13467289

申请日：2012-05-09

申请人： Deepanshu Dutta ,  Shinji Sato ,  Fumiko Yano

发明人： Deepanshu Dutta ,  Shinji Sato ,  Fumiko Yano

IPC分类号： G11C11/34 ,  G11C16/34 ,  G11C16/10 ,  G11C16/04

CPC分类号： G11C16/3418 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3427

摘要： In a non-volatile storage system, a programming portion of a program-verify iteration has multiple programming pulses, and storage elements along a word line are selected for programming according to a pattern. Unselected storage elements are grouped to benefit from channel-to-channel capacitive coupling from both primary and secondary neighbor storage elements. The coupling is helpful to boost channel regions of the unselected storage elements to a higher channel potential to prevent program disturb. Each selected storage element has a different relative position within its set. For example, during a first programming pulse, first, second and third storage elements are selected in first, second and third sets, respectively. During a second programming pulse, second, third and first storage elements are selected in the first, second and third sets, respectively. During a third programming pulse, third, first and second storage elements are selected in the first, second and third sets, respectively.

摘要翻译： 在非易失性存储系统中，程序验证迭代的编程部分具有多个编程脉冲，并且根据模式选择沿字线的存储元件进行编程。 未选择的存储元件被分组以从主要和次要邻居存储元件的通道到通道的电容耦合受益。 耦合有助于将未选择的存储元件的通道区域升高到更高的通道电位，以防止程序干扰。 每个选定的存储元件在其集合内具有不同的相对位置。 例如，在第一编程脉冲期间，分别在第一，第二和第三组中选择第一，第二和第三存储元件。 在第二编程脉冲期间，分别在第一，第二和第三组中选择第二，第三和第一存储元件。 在第三编程脉冲期间，分别在第一，第二和第三组中选择第三，第一和第二存储元件。

公开(公告)号：US08611157B2

公开(公告)日：2013-12-17

申请号：US13335524

申请日：2011-12-22

申请人： Deepanshu Dutta

发明人： Deepanshu Dutta

IPC分类号： G11C11/34

CPC分类号： G11C16/26 ,  G11C7/04 ,  G11C11/5628 ,  G11C16/3459

摘要： Methods and non-volatile storage systems are provided for using compensation that depends on the temperature at which the memory cells were programmed. Note that the read level compensation may have a component that is not dependent on the memory cells' Tco. That is, the component is not necessarily based on the temperature dependence of the Vth of the memory cells. The compensation may have a component that is dependent on the difference in width of individual Vth distributions of the different states across different temperatures of program verify. This compensation may be used for both verify and read, although a different amount of compensation may be used during read than during verify.

公开(公告)号：US08385132B2

公开(公告)日：2013-02-26

申请号：US12976893

申请日：2010-12-22

申请人： Deepanshu Dutta ,  Jeffrey W. Lutze

发明人： Deepanshu Dutta ,  Jeffrey W. Lutze

IPC分类号： G11C16/04

CPC分类号： G11C16/24 ,  G11C16/3418 ,  G11C16/3436

摘要： In a non-volatile storage system, capacitive coupling effects are reduced by reducing the probability that adjacent storage elements reach the lockout condition at close to the same program pulse. A slow down measure such as an elevated bit line voltage is applied to the storage elements of a word line which are associated with odd-numbered bit lines, but not to the storage elements associated with even-numbered bit lines. The elevated bit line voltage is applied over a range of program pulses, then stepped down to ground over one or more program pulses. The range of programming pulses over which the slow down measure is applied, can be fixed or determined adaptively. A program pulse increment can be dropped, then increased, when the bit line voltage is stepped down. Storage elements which are programmed to a highest target data state can be excluded from the slow down measure.

摘要翻译： 在非易失性存储系统中，通过减少相邻存储元件在接近相同的编程脉冲时达到锁定状态的可能性来降低电容耦合效应。 诸如升高的位线电压之类的减速措施被施加到与奇数位线相关联的字线的存储元件，而不是与与偶数位线相关联的存储元件。 升高的位线电压施加在编程脉冲的范围上，然后通过一个或多个编程脉冲降压到地。 施加减速措施的编程脉冲的范围可以自适应地固定或确定。 当位线电压降低时，程序脉冲增量可以下降，然后增加。 被编程为最高目标数据状态的存储元件可以从减速测量中排除。

公开(公告)号：US20120250418A1

公开(公告)日：2012-10-04

申请号：US13523366

申请日：2012-06-14

申请人： Deepanshu Dutta ,  Jeffrey W Lutze

发明人： Deepanshu Dutta ,  Jeffrey W Lutze

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C16/3459

摘要： In a non-volatile memory system, a multi-phase programming operation is performed in which a drain-side select gate voltage (Vsgd) can be adjusted in different programming phases to accommodate different bit line bias (Vbl) levels. A higher Vbl can be used when Vsgd is higher to avoid unnecessary stress on the SGD transistor and reduce power consumption. For example, Vsgd can be higher in an earlier program phase than in a later program phase. The higher Vbl, which is not based on programming speed, can be is applied when the Vth of a storage element is between lower and upper verify levels of target data states, or throughout a programming phase, or at other times. The higher Vbl is an additional slow down measure which can be implemented in addition to a programming speed-based slow down measure such as a further raised Vbl which is applied to faster-programming storage elements.

摘要翻译： 在非易失性存储器系统中，执行多相编程操作，其中可以在不同的编程阶段调整漏极侧选择栅极电压（Vsgd）以适应不同的位线偏置（Vbl）电平。 当Vsgd较高时可以使用更高的Vbl，以避免SGD晶体管上的不必要的应力，并降低功耗。 例如，Vsgd可能在较早的程序阶段比在较后的程序阶段更高。 当存储元件的Vth在目标数据状态的下限和上限验证电平之间，或者在整个编程阶段，或者在其他时间时，可以应用不基于编程速度的较高Vbl。 较高的Vbl是一种额外的减速措施，除了基于速度的编程速度减慢措施之外，还可以实现这一措施，例如进一步升高的Vbl，其应用于更快编程的存储元件。

公开(公告)号：US08274838B2

公开(公告)日：2012-09-25

申请号：US12838902

申请日：2010-07-19

申请人： Deepanshu Dutta ,  Jeffrey W. Lutze

发明人： Deepanshu Dutta ,  Jeffrey W. Lutze

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/3454 ,  G11C16/3486 ,  G11C2216/14

摘要： Threshold voltage distributions in a non-volatile memory device are narrowed, and/or programming time is reduced, using a programming technique in which the bit line voltage for storage elements having a target data state is stepped up, in lock step with a step up in the program voltage. The step up in the bit line voltage is performed at different times in the programming pass, for different subsets of storage elements, according to their target data state. The start and stop of the step up in the bit line voltage can be set based on a fixed program pulse number, or adaptive based on a programming progress. Variations include using a fixed bit line step, a varying bit line step, a data state-dependent bit line step, an option to not step up the bit line for one or more data states and an option to add an additional bit line bias.

摘要翻译： 使用编程技术使非易失性存储器件中的阈值电压分布变窄，并且/或编程时间减少，其中具有目标数据状态的存储元件的位线电压被升高，在升压锁定步骤中 在编程电压。 根据其目标数据状态，针对存储元件的不同子集，在编程遍历中的不同时刻对位线电压进行升压。 可以基于固定的编程脉冲数或基于编程进度的自适应来设置位线电压中的升压的开始和停止。 变化包括使用固定的位线步长，变化的位线步长，数据状态相关的位线步长，不增加一个或多个数据状态的位线的选项以及增加额外位线偏置的选项。

公开(公告)号：US20120127800A1

公开(公告)日：2012-05-24

申请号：US13360103

申请日：2012-01-27

申请人： Jeffrey W. Lutze ,  Deepanshu Dutta

发明人： Jeffrey W. Lutze ,  Deepanshu Dutta

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3454 ,  G11C2211/5621

摘要： A non-volatile storage system reduces program disturb in a set of non-volatile storage elements by programming using selected bit line patterns which increase the clamped boosting potential of an inhibited channel to avoid program disturb. Alternate pairs of adjacent bit lines are grouped into first and second sets. Non-volatile storage elements of the first set of pairs are subject to program pulses and verify operations in each of a first number of iterations, after which non-volatile storage elements of the second set of pairs is subject to program pulses and verify operations in each of a second number of iterations.

摘要翻译： 非易失性存储系统通过使用选择的位线模式进行编程来减少一组非易失性存储元件中的程序干扰，这增加了禁止信道的钳位升压电位以避免程序干扰。 交替的相邻位线对被分组成第一和第二组。 第一组对的非易失性存储元件经受编程脉冲并且在第一迭代次数中的每一个中验证操作，之后第二组对的非易失性存储元件经受编程脉冲并且验证操作 每次迭代次数为次。

公开(公告)号：US20120033500A1

公开(公告)日：2012-02-09

申请号：US12849510

申请日：2010-08-03

申请人： Deepanshu Dutta ,  Jeffrey W. Lutze

发明人： Deepanshu Dutta ,  Jeffrey W. Lutze

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C16/3459

摘要： In a non-volatile memory system, a programming speed-based slow down measure such as a raised bit line is applied to the faster-programming storage elements. A multi-phase programming operation which uses a back-and-forth word line order is performed in which programming speed data is stored in latches in one programming phase and read from the latches for use in a subsequent programming phase of a given word line. The faster and slower-programming storage elements can be distinguished by detecting when a number of storage elements reach a specified verify level, counting an additional number of program pulses which is set based on a natural threshold voltage distribution of the storage elements, and subsequently performing a read operation that separates the faster and slower programming storage elements. A drain-side select gate voltage can be adjusted in different programming phases to accommodate different bit line bias levels.

摘要翻译： 在非易失性存储器系统中，基于速度的编程速度减慢测量例如升高的位线被应用于更快编程的存储元件。 执行使用来回字线顺序的多相编程操作，其中编程速度数据被存储在一个编程阶段的锁存器中，并且从锁存器读取以用于给定字线的后续编程阶段。 可以通过检测多个存储元件何时达到指定的验证电平，计数基于存储元件的自然阈值电压分布而设置的附加数量的编程脉冲，并且随后执行 一种分离更快和慢速编程存储元件的读取操作。 可以在不同的编程阶段调整漏极侧选择栅极电压，以适应不同的位线偏置电平。

公开(公告)号：US08004900B2

公开(公告)日：2011-08-23

申请号：US12406014

申请日：2009-03-17

申请人： Deepanshu Dutta ,  Jeffrey W. Lutze

发明人： Deepanshu Dutta ,  Jeffrey W. Lutze

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/16 ,  G11C11/5635 ,  G11C16/0483

摘要： A technique for erasing a non-volatile memory applies a p-well voltage to a substrate and drives or floats select gate voltages to accurately control the select gate voltage to improve write-erase endurance. Source and drain side select gates of a NAND string are driven at levels to optimize endurance. In one approach, the select gates float after being driven at a specific initial level, to reach a specific, optimal final level. In another approach, the select gates are driven at specific levels throughout an erase operation, in concert with the p-well voltage. In another approach, onset of select gate floating is delayed while the p-well voltage ramps up. In another approach, p-well voltage is ramped up in two steps, and the select gates are not floated until the second ramp begins. Floating can be achieved by raising the drive voltage to cut off pass gates of the select gates.

摘要翻译： 擦除非易失性存储器的技术将p阱电压施加到衬底并且驱动或浮动选择栅极电压以精确地控制选择栅极电压以改善写入擦除耐久性。 NAND串的源极和漏极侧选择栅极被驱动，以优化耐久性。 在一种方法中，选择门在被特定初始级别驱动之后浮动，以达到特定的最佳最终级别。 在另一种方法中，与p阱电压一致，在擦除操作期间，选择栅极以特定电平驱动。 在另一种方法中，选择栅极浮动的开始被延迟，而p阱电压上升。 在另一种方法中，p阱电压以两个步骤升高，并且在第二个斜坡开始之前，选择栅极不浮动。 可以通过提高驱动电压来切断选通门的通孔来实现浮动。

公开(公告)号：US20110110153A1

公开(公告)日：2011-05-12

申请号：US12616269

申请日：2009-11-11

申请人： Deepanshu Dutta ,  Jeffrey W. Lutze ,  Grishma Shah

发明人： Deepanshu Dutta ,  Jeffrey W. Lutze ,  Grishma Shah

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3427

摘要： In a programming operation, selected storage elements on a selected word line are programmed while unselected storage elements on the selected word line are inhibited from programming by channel boosting. To provide a sufficient but not excessive level of boosting, the amount of boosting can be set based on a data state of the unselected storage element. A greater amount of boosting can be provided for a lower data state which represents a lower threshold voltage and hence is more vulnerable to program disturb. A common boosting scheme can be used for groups of multiple data states. The amount of boosting can be set by adjusting the timing and magnitude of voltages used for a channel pre-charge operation and for pass voltages which are applied to word lines. In one approach, stepped pass voltages on unselected word lines can be used to adjust boosting for channels with selected data states.

摘要翻译： 在编程操作中，选择的字线上的所选择的存储元件被编程，同时通过通道增强来禁止所选字线上的未选择的存储元件的编程。 为了提供足够但不是过高的升压水平，可以基于未选择的存储元件的数据状态来设定升压量。 可以为代表较低阈值电压的较低数据状态提供更大量的升压，因此更易受编程干扰的影响。 一个共同的升压方案可以用于多个数据状态的组。 可以通过调整用于通道预充电操作的电压的时序和幅度以及施加到字线的通过电压来设置升压量。 在一种方法中，可以使用未选择字线上的阶梯式通过电压来调整具有所选数据状态的通道的升压。