摘要:
A reference generator circuit has a resistor string between the potentials of the power supply voltage that is partitioned into a top string, a middle string, and a bottom string. PFET devices are used to couple the positive power supply voltage a selected node of the top string in response to first control signals and complementary second control signals are used to control NFET devices that couple the ground power supply voltage to a selected node of the bottom string. If a resistor is effectively removed from the top string a corresponding resistor is effectively added in the bottom string keeping the total resistance in the resistor string substantially constant. A pass gate network is used to select between nodes of the middle string as a vernier for generating small step sizes.
摘要:
A memory includes an array of memory cells that form rows and columns. The rows of the array include memory cell pairs. The memory cells may include two cross-coupled inverters and two pass-devices that couple to alternate sides of the cross-coupled inverters. The two memory cells of a memory cell pair share a common intra-pair bitline. Adjacent memory cell pairs share a common inter-pair bitline. To perform a data read operation on a particular memory cell in a memory cell pair in the rows and columns of the array, wordline drive circuitry transmits wordline activate signals to select both the row for the data read operation and a particular one of the pair of memory cells for the data read operation.
摘要:
Performing a calculation using a coordinate rotation digital computer (CORDIC) algorithm. Execution of the CORDIC algorithm is begun. An error introduced by a truncated vector as a result of executing the CORDIC algorithm is pre-computed. The error is incorporated into a subsequent iteration of the CORDIC algorithm. Execution of the CORDIC algorithm is completed. The result of the CORDIC algorithm is stored.
摘要:
A mechanism is provided for gating a read access of any row in a cache access memory that has been invalidated. An address decoder in the cache access memory sends a memory access to a non-gated wordline driver and a gated wordline driver associated with the memory access. The non-gated wordline driver outputs the data stored in a valid bit memory cell to the gated wordline driver in response to the non-gated wordline driver determining the memory access as a read access. The gated wordline driver determines whether the data from the valid bit memory cell from the non-gated wordline driver indicates either valid data or invalid data in response to the gated wordline driver determining the memory access as a read access and denies an output of the data in a row of memory cells associated with the gated wordline driver in response to the data being invalid.
摘要:
Mechanisms for multiple hit (multi-hit) detection in associative memories, such as a content addressable memory (CAM), are provided. The illustrative embodiments include a hit bitline that discharges as RAM side entries of the associative memory are accessed. The hit bitline is precharged high and pulled low by a series of devices that are activated as each RAM side row is accessed. As more RAM side rows are accessed, the hit bitline drops lower in voltage. The hit bitline drives an inverter with a threshold set such that any voltage equal to or lower than the threshold indicates a multi-hit situation. Any voltage higher than the threshold indicates a single hit or “no-hit” situation. Thus, from the voltage of the hit bitline, the presence of a multi-hit condition may be detected.
摘要:
A mechanism is provided for transparent multi-hit correction in associative memories. A content associative memory (CAM) device is provided that transparently and independently executes a precise corrective action in the case of a multiple hit being detected. The wordlines of a CAM array are modified to include a valid bit storage circuit element that indicates whether or not the corresponding wordline is valid or not. In operation, if multiple hits are detected, the multiple hit is signaled to the host system and the particular entries in the CAM array corresponding to the multiple hits are invalidated by setting their associated valid bit storage circuit elements to an invalid value or clearing the value in the associated valid bit storage circuit element. Any data returned to the host system as a result of the multiple hits is invalidated in the host system in response to the signaling of the multiple hits.
摘要:
An apparatus and method for multiple hit (multi-hit) detection in associative memories, such as a content addressable memory (CAM), are provided. The illustrative embodiments include a hit bitline that discharges as RAM side entries of the associative memory are accessed. The hit bitline is precharged high and pulled low by a series of devices that are activated as each RAM side row is accessed. As more RAM side rows are accessed, the hit bitline drops lower in voltage. The hit bitline drives an inverter with a threshold set such that any voltage equal to or lower than the threshold indicates a multi-hit situation. Any voltage higher than the threshold indicates a single hit or “no-hit” situation. Thus, from the voltage of the hit bitline, the presence of a multi-hit condition may be detected.
摘要:
A mechanism is provided for enabling a proper write through during a write-through operation. Responsive to determining the memory access as a write-through operation, first circuitry determines whether a data input signal is in a first state or a second state. Responsive to the data input signal being in the second state, the first circuitry outputs a global write line signal in the first state. Responsive to the global write line signal being in the first state, second circuitry outputs a column select signal in the second state. Responsive to the column select signal being in the second state, third circuitry keeps a downstream read path of the cache access memory at the first state such that data output by the cache memory array is in the first state.
摘要:
A method comprises generating a test pattern for a device under test (DUT), wherein the DUT comprises a plurality of scan chains coupled to a plurality of multiple input shift registers (MISRs). The plurality of faults detected by a first MISR and by a second MISR are identified. In the event the plurality of faults detected by the first MISR does not include any of the plurality of faults detected by the second MISR and the plurality of faults detected by the second MISR does not include any of the plurality of faults detected by the first MISR, the first MISR and the second MISR are coupled as an independent MISR pair. The test pattern is applied to the DUT to generate a scan chain output. The independent MISR pair captures the scan chain output to generate a test signature. The test signature is compared with a known good signature.
摘要:
A method comprises generating a test pattern for a device under test (DUT), wherein the DUT comprises a plurality of scan chains coupled to a plurality of multiple input shift registers (MISRs). The plurality of faults detected by a first MISR and by a second MISR are identified. In the event the plurality of faults detected by the first MISR does not include any of the plurality of faults detected by the second MISR and the plurality of faults detected by the second MISR does not include any of the plurality of faults detected by the first MISR, the first MISR and the second MISR are coupled as an independent MISR pair. The test pattern is applied to the DUT to generate a scan chain output. The independent MISR pair captures the scan chain output to generate a test signature. The test signature is compared with a known good signature.