摘要:
A memory includes an array of memory cells that form rows and columns. The rows include memory cell pairs. The memory cells may include two cross-coupled inverters and two pass-devices that couple to alternate sides of the cross-coupled inverters. For a read operation, a wordline drive circuit selects one memory cell of the pair, the selected memory cell being an addressed memory cell while the remaining cell is an unaddressed memory cell. In response to a wordline enable signal, a pass gate in the addressed memory cell couples the addressed memory cell via a complement bitline to an evaluation gate that resolves the data from the read operation. During the read operation, the unaddressed memory cell couples via another pass gate to a true bitline that terminates without an evaluation gate to conserve energy.
摘要:
An information handling system (IHS) includes a processor with on-chip or off-chip SRAM array. After a read operation, a control circuit may instruct the SRAM array to conduct a precharge operation, or alternatively, instruct the SRAM array to conduct an equalize bitline voltage operation. A read operation may follow the precharge operation or the equalize bitline voltage operation. The control circuit may instruct the SRAM array to conduct an equalize bitline voltage operation if an equalized voltage of a bitline pair exhibits more that a predetermined amount of voltage. Otherwise, the control circuit instructs the SRAM array to conduct a precharge operation before the next read operation.
摘要:
A memory includes an array of memory cells that form rows and columns. The rows of the array include memory cell pairs. The memory cells may include two cross-coupled inverters and two pass-devices that couple to alternate sides of the cross-coupled inverters. The two memory cells of a memory cell pair share a common intra-pair bitline. Adjacent memory cell pairs share a common inter-pair bitline. To perform a data read operation on a particular memory cell in a memory cell pair in the rows and columns of the array, wordline drive circuitry transmits wordline activate signals to select both the row for the data read operation and a particular one of the pair of memory cells for the data read operation.
摘要:
A mechanism is provided for gating a read access of any row in a cache access memory that has been invalidated. An address decoder in the cache access memory sends a memory access to a non-gated wordline driver and a gated wordline driver associated with the memory access. The non-gated wordline driver outputs the data stored in a valid bit memory cell to the gated wordline driver in response to the non-gated wordline driver determining the memory access as a read access. The gated wordline driver determines whether the data from the valid bit memory cell from the non-gated wordline driver indicates either valid data or invalid data in response to the gated wordline driver determining the memory access as a read access and denies an output of the data in a row of memory cells associated with the gated wordline driver in response to the data being invalid.
摘要:
A method is provided that uses non-linear data compression in order to generate a set of test vectors for use in scan testing an integrated circuit. The method includes the steps of initially designing the set of test vectors, and selecting one of multiple available coding schemes for each test vector wherein at least two of the coding schemes selected for encoding are different from one another, and wherein one of the available coding schemes represents non-encoded data. The method further comprises operating a random pattern generator to generate data blocks, each corresponding to one of the test vectors, wherein the data block corresponding to a given test vector is encoded with a bit pattern representing the coding scheme of the given test vector. The corresponding data block also has a bit length that is less than the bit length of the given test vector. Each data block is routed to a plurality of decoders, wherein each decoder is adapted to recognize only one of the coding schemes represented by one of the bit patterns. The decoder recognizing the coding scheme of the data block decodes the bit pattern of the data block and generates the test vectors corresponding to the data block.
摘要:
Performing a calculation using a coordinate rotation digital computer (CORDIC) algorithm. Execution of the CORDIC algorithm is begun. An error introduced by a truncated vector as a result of executing the CORDIC algorithm is pre-computed. The error is incorporated into a subsequent iteration of the CORDIC algorithm. Execution of the CORDIC algorithm is completed. The result of the CORDIC algorithm is stored.
摘要:
A mechanism for reducing the amount of power or energy consumed by an SRAM array when the SRAM array is being accessed is provided. Logic is provided that identifies a polarity of a row of memory cells whose data values are to be read. The polarity of the row of memory cells indicates whether a majority of the data values stored in the row of memory cells are logic 1 data values or logic 0 data values. Based on the polarity, selection logic either selects true data values or complement data values of the memory cells. Additional logic is provided in each memory cell for outputting a true data value to a read bit line and outputting a compliment data value to the read bit line based on the polarity.
摘要:
A mechanism for reducing the amount of power or energy consumed by an SRAM array when the SRAM array is being accessed are provided. Logic is provided for determining the polarity of an incoming row being written to the SRAM cell array. Logic is further provided for storing a polarity value into an additional SRAM cell per row of the SRAM cell array. Logic is also provided for reading an inverted value of the SRAM cells of a row in the SRAM cell array if the row contains more 0's than 1's, as determined based on the polarity value stored in the additional SRAM cell per row. Logic is further provided for signaling to downstream logic whether the data read from the SRAM cells in the row represents the true data values or their complement, as determined based on the polarity value stored in the additional SRAM cell per row.
摘要:
A system for mitigating power supply and power distribution system noise response by throttling execution units based upon voltage sensing in a circuit is provided. A sensing unit senses the voltage of a circuit. The sensing unit determines if the execution of another execution unit will cause the circuit voltage to drop below a threshold level. In response to a determination that the execution of another execution unit will cause the circuit voltage to drop below the threshold level, the execution unit is throttled.
摘要:
Two or more integrated circuit (IC) chips are separated by a significant distance relative to their communication frequency such that pseudo-differential signaling is used to improve signal detection. A derived reference voltage is generated that tracks the variations of the driver and receiver side power supply variations that normally reduce noise margins. The derived reference voltage is filtered to reduce high frequency response and coupled as the reference to differential receivers used to detect the logic levels of the communication signals.