RPSC AND RF FEEDTHROUGH
    31.
    发明申请
    RPSC AND RF FEEDTHROUGH 审中-公开
    RPSC和RF FEEDTHROUGH

    公开(公告)号:US20090151636A1

    公开(公告)日:2009-06-18

    申请号:US12271613

    申请日:2008-11-14

    IPC分类号: C23C16/513 C23C16/511

    摘要: The present invention generally comprises an apparatus having an RF choke and a remote plasma source combined into a single unit. Process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube may provide process gases and the cleaning gases to the process chamber. The inside of the gas feed tube may remain at a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead during processing. Igniting the cleaning gas plasma within the gas feed tube permits the plasma to be ignited closer to the processing chamber. Thus, RF current travels along the outside of the apparatus during deposition and microwave current ignites a plasma within the apparatus before feeding the plasma to the processing chamber.

    摘要翻译: 本发明通常包括具有组合成单个单元的RF扼流圈和远程等离子体源的装置。 工艺气体可以经由可被作为RF电极驱动的喷头组件引入室。 气体供给管可以将处理气体和清洁气体提供给处理室。 气体供给管的内部可以保持在零RF场,以避免气体进料管内的过早气体击穿,这可能在处理期间导致气体源和喷头之间的寄生等离子体形成。 点燃气体供给管内的清洁气体等离子体允许等离子体更靠近处理室被点燃。 因此,RF电流在沉积期间沿着设备的外部行进,并且在将等离子体馈送到处理室之前,微波电流点燃设备内的等离子体。

    RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS
    32.
    发明申请
    RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS 有权
    RF选择用于气体输送到等离子体处理装置中的RF驱动电极

    公开(公告)号:US20090022905A1

    公开(公告)日:2009-01-22

    申请号:US12172029

    申请日:2008-07-11

    IPC分类号: C23C16/455

    摘要: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

    摘要翻译: 在大面积等离子体处理系统中,工艺气体可以经由可被作为RF电极驱动的喷头组件引入腔室。 接地的气体供给管与喷头电气隔离。 气体供给管不仅可以提供处理气体,还可以提供从远程等离子体源清洁气体到处理室。 气体供给管的内部可以保持在低RF场或零RF场,以避免气体进料管内的过早气体击穿,这可能导致气体源和喷头之间的寄生等离子体形成。 通过馈送气体通过RF扼流圈,RF场和处理气体可以通过公共位置被引入处理室,从而简化室设计。

    REMOTE INDUCTIVELY COUPLED PLASMA SOURCE FOR CVD CHAMBER CLEANING
    33.
    发明申请
    REMOTE INDUCTIVELY COUPLED PLASMA SOURCE FOR CVD CHAMBER CLEANING 有权
    远程电感耦合等离子体源用于CVD室清洁

    公开(公告)号:US20090008239A1

    公开(公告)日:2009-01-08

    申请号:US12114127

    申请日:2008-05-02

    IPC分类号: H05H1/24 C23C16/44

    摘要: The present invention generally includes a remote plasma source and a method of generating a plasma in a remote plasma source. Cleaning gas may be ignited into a plasma in a remote location and then provided to the processing chamber. By flowing the cleaning gas outside of a cooled RF coil, a plasma may be ignited at either high or low pressure while providing a high RF bias to the coil. Cooling the RF coil may reduce sputtering of the coil and thus reduce undesirable contaminants from being fed to the processing chamber with the cleaning gas plasma. Reduced sputtering from the coil may extend the useful life of the remote plasma source.

    摘要翻译: 本发明通常包括远程等离子体源和在远程等离子体源中产生等离子体的方法。 清洁气体可以被点燃到远程位置的等离子体中,然后提供给处理室。 通过将清洁气体流过冷却的RF线圈外,可以在高压或低压下点燃等离子体,同时向线圈提供高RF偏压。 冷却RF线圈可以减少线圈的溅射,从而减少不期望的污染物从清洁气体等离子体送入处理室。 从线圈减少的溅射可延长远程等离子体源的使用寿命。

    CLEANING MEANS FOR LARGE AREA PECVD DEVICES USING A REMOTE PLASMA SOURCE
    34.
    发明申请
    CLEANING MEANS FOR LARGE AREA PECVD DEVICES USING A REMOTE PLASMA SOURCE 审中-公开
    使用远程等离子体源对大面积PECVD器件进行清洁

    公开(公告)号:US20080035169A1

    公开(公告)日:2008-02-14

    申请号:US11549679

    申请日:2006-10-16

    IPC分类号: B08B6/00

    摘要: This invention describes a method for cleaning a deposition chamber that is compatible with large area deposition. It comprises transport of activated gas from a remote plasma source to an area in the chamber in a uniform way through at least two injection points on equivalent paths for the reactive species. A respective gas injection system for the distribution of activated reactive gas comprises a source of reactive gas, a tubing for distributing the gas and an evacuable chamber. The gas is discharged to the tubing having at least one inlet constructively connected to the source and at least two outlets open to the chamber, thereby forming at least partially independent tube branches, wherein the length and the cross-section perpendicular to the gas flow of each tube branch, calculated between inlet and each respective outlet is essentially equal.

    摘要翻译: 本发明描述了一种用于清洁与大面积沉积相容的沉积室的方法。 其包括将活化气体从远程等离子体源输送到室中的区域,以均匀的方式通过反应物种的等效路径上的至少两个注入点。 用于分配活性反应气体的各自的气体注入系统包括反应气体源,用于分配气体的管道和可抽空室。 气体被排放到具有构造地连接到源的至少一个入口的管道和至少两个通向腔室的出口,从而形成至少部分独立的管分支,其中垂直于气流的长度和横截面 在入口和每个相应出口之间计算的每个管支路基本相等。