公开(公告)号：US08691047B2

公开(公告)日：2014-04-08

申请号：US12948164

申请日：2010-11-17

申请人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

发明人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

IPC分类号： C23C16/505 ,  H01L21/3065

CPC分类号： H01J37/32577 ,  H01J37/32091 ,  H01J37/32183

摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.

摘要翻译： 提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。 在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。 基板支撑件设置在室主体中限定的处理空间中。 电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

公开(公告)号：US20130206068A1

公开(公告)日：2013-08-15

申请号：US13764832

申请日：2013-02-12

申请人： Jozef KUDELA ,  Suhail ANWAR ,  Carl A. SORENSEN ,  Douglas TRUONG ,  John M. WHITE

发明人： Jozef KUDELA ,  Suhail ANWAR ,  Carl A. SORENSEN ,  Douglas TRUONG ,  John M. WHITE

IPC分类号： C23C16/511

CPC分类号： C23C16/511 ,  C23C16/54

摘要： The present invention generally relates to a linear PECVD apparatus. The apparatus is designed to process two substrates simultaneously so that the substrates share plasma sources as well as gas sources. The apparatus has a plurality of microwave sources centrally disposed within the chamber body of the apparatus. The substrates are disposed on opposite sides of the microwave sources with the gas sources disposed between the microwave sources and the substrates. The shared microwave sources and gas sources permit multiple substrates to be processed simultaneously and reduce the processing cost per substrate.

摘要翻译： 本发明一般涉及线性PECVD装置。 该设备被设计成同时处理两个基板，使得基板共享等离子体源以及气体源。 该装置具有集中设置在该装置的室主体内的多个微波源。 基板设置在微波源的相对侧上，气源设置在微波源和基板之间。 共享的微波源和气源允许同时处理多个基板，并降低每个基板的加工成本。

公开(公告)号：US20130068161A1

公开(公告)日：2013-03-21

申请号：US13538389

申请日：2012-06-29

申请人： John M. White ,  Suhail Anwar ,  Jozef Kudela ,  Carl A. Sorensen ,  Tae K. Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Benjamin M. Johnston

发明人： John M. White ,  Suhail Anwar ,  Jozef Kudela ,  Carl A. Sorensen ,  Tae K. Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Benjamin M. Johnston

IPC分类号： C23C16/455 ,  B05B1/14

CPC分类号： C23C16/455 ,  C23C16/45578 ,  C23C16/4587 ,  C23C16/511 ,  C23C16/513 ,  C23C16/54

摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.

摘要翻译： 一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过 需要喷气孔。 具有较大气体注入孔的外管可围绕每个气体分配管。 气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

公开(公告)号：US20120149194A1

公开(公告)日：2012-06-14

申请号：US13401755

申请日：2012-02-21

申请人： SAM H. KIM ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

发明人： SAM H. KIM ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

IPC分类号： H01L21/28

CPC分类号： H01L21/68742 ,  H01L21/6831

摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

公开(公告)号：US08163191B2

公开(公告)日：2012-04-24

申请号：US13178448

申请日：2011-07-07

申请人： Carl A. Sorensen

发明人： Carl A. Sorensen

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32174 ,  H05H1/46

摘要： In certain aspects, a substrate deposition apparatus, including a gas tube coupled to a gas source, an RF power source and a substrate processing chamber, is provided. The gas tube is adapted to carry process gas and cleaning plasma from the gas source/remote plasma gas source to the substrate processing chamber and the RF power source is adapted to couple RF power to the substrate processing chamber. Furthermore an RF choke coupled to the RF power source and the gas source wherein the RF choke is adapted to attenuate a voltage difference between the RF power source and the gas source to prevent plasma formation in the gas tube during substrate processing. Numerous other aspects are provided.

摘要翻译： 在某些方面，提供了包括连接到气体源的气体管，RF电源和衬底处理室的衬底沉积设备。 气体管适合于将气体源和远程等离子体气体源的处理气体和等离子体从衬底处理室中提取，并且RF电源适于将RF功率耦合到衬底处理室。 此外，耦合到RF电源和气源的RF扼流器，其中RF扼流圈适于衰减RF电源和气体源之间的电压差，以防止衬底处理期间气体管中的等离子体形成。 提供了许多其他方面。

公开(公告)号：US08075734B2

公开(公告)日：2011-12-13

申请号：US12114127

申请日：2008-05-02

申请人： Carl A. Sorensen ,  Jozef Kudela

发明人： Carl A. Sorensen ,  Jozef Kudela

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4405 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862 ,  H05H1/46

摘要： The present invention generally includes a remote plasma source and a method of generating a plasma in a remote plasma source. Cleaning gas may be ignited into a plasma in a remote location and then provided to the processing chamber. By flowing the cleaning gas outside of a cooled RF coil, a plasma may be ignited at either high or low pressure while providing a high RF bias to the coil. Cooling the RF coil may reduce sputtering of the coil and thus reduce undesirable contaminants from being fed to the processing chamber with the cleaning gas plasma. Reduced sputtering from the coil may extend the useful life of the remote plasma source.

摘要翻译： 本发明通常包括远程等离子体源和在远程等离子体源中产生等离子体的方法。 清洁气体可以被点燃到远程位置的等离子体中，然后提供给处理室。 通过将清洁气体流过冷却的RF线圈外，可以在高压或低压下点燃等离子体，同时向线圈提供高RF偏压。 冷却RF线圈可以减少线圈的溅射，从而减少不期望的污染物从清洁气体等离子体送入处理室。 从线圈减少的溅射可延长远程等离子体源的使用寿命。

公开(公告)号：US20110259362A1

公开(公告)日：2011-10-27

申请号：US13178448

申请日：2011-07-07

申请人： Carl A. Sorensen

发明人： Carl A. Sorensen

IPC分类号： B08B7/04

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32174 ,  H05H1/46

摘要： In certain aspects, a substrate deposition apparatus, including a gas tube coupled to a gas source, an RF power source and a substrate processing chamber, is provided. The gas tube is adapted to carry process gas and cleaning plasma from the gas source/remote plasma gas source to the substrate processing chamber and the RF power source is adapted to couple RF power to the substrate processing chamber. Furthermore an RF choke coupled to the RF power source and the gas source wherein the RF choke is adapted to attenuate a voltage difference between the RF power source and the gas source to prevent plasma formation in the gas tube during substrate processing. Numerous other aspects are provided.

摘要翻译： 在某些方面，提供了包括连接到气体源的气体管，RF电源和衬底处理室的衬底沉积设备。 气体管适合于将气体源和远程等离子体气体源的处理气体和等离子体从衬底处理室中提取，并且RF电源适于将RF功率耦合到衬底处理室。 此外，耦合到RF电源和气源的RF扼流器，其中RF扼流圈适于衰减RF电源和气体源之间的电压差，以防止衬底处理期间气体管中的等离子体形成。 提供了许多其他方面。

公开(公告)号：US07570130B2

公开(公告)日：2009-08-04

申请号：US11179036

申请日：2005-07-11

申请人： Carl A. Sorensen ,  John M. White ,  Suhail Anwar

发明人： Carl A. Sorensen ,  John M. White ,  Suhail Anwar

IPC分类号： H03H5/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： In certain embodiments, an apparatus for providing a fixed impedance transformation network for driving a plasma chamber includes a pre-match network adapted to couple between an Active RF match network and a plasma chamber load associated with the plasma chamber. The pre-match network includes (1) a first capacitive element; (2) an inductive element connected in parallel with the first capacitive element to form a parallel circuit that presents a stepped-up impedance to an output of the Active RF match network such that a voltage required to drive the plasma chamber load is reduced; and (3) a second capacitive element coupled to the parallel circuit and adapted to couple to the plasma chamber load. The second capacitive element reduces or cancels at least in part a reactance corresponding to an inductance associated with the plasma chamber load. Numerous other aspects are provided.

摘要翻译： 在某些实施例中，用于提供用于驱动等离子体室的固定阻抗变换网络的装置包括适于在有源RF匹配网络和与等离子体室相关联的等离子体室负载之间耦合的预匹配网络。 预匹配网络包括（1）第一电容元件; （2）与所述第一电容元件并联连接的电感元件，以形成并联电路，所述并联电路向所述有源RF匹配网络的输出提供升压阻抗，使得驱动所述等离子体室负载所需的电压降低; 和（3）耦合到并联电路并且适于耦合到等离子体室负载的第二电容元件。 第二电容元件至少部分地减小或抵消与等离子体室负载相关联的电感的电抗。 提供了许多其他方面。

公开(公告)号：US20090159423A1

公开(公告)日：2009-06-25

申请号：US12343519

申请日：2008-12-24

申请人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

发明人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

IPC分类号： H05H1/00 ,  H01L21/3065 ,  B23H7/14

CPC分类号： H01L21/02 ,  B44C1/227 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02104

摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平 更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话） 。 或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。 加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。 本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

公开(公告)号：US06359250B1

公开(公告)日：2002-03-19

申请号：US09664983

申请日：2000-09-18

申请人： Wendell T. Blonigan ,  Carl A. Sorensen

发明人： Wendell T. Blonigan ,  Carl A. Sorensen

IPC分类号： B23K1000

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

摘要翻译： 一种用于在平行板电极系统中的第一电极上分配RF功率输出的装置，用于在衬底上沉积膜中产生等离子体。 将RF功率输出施加到分布式RF匹配网络，以从工艺气流中激发等离子体以将均匀的膜沉积到衬底上。 分布式匹配网络包括用于接收射频功率输入的负载电容器和具有第一端和第二端的电感器，其第一端耦合到负载电容器。 匹配网络还包括多个驱动电容器，每个驱动电容器将电感器的第二端耦合到分布在第一电极上的多个点中的不同的一个。 每个驱动电容器的电容可由用户选择，驱动电容耦合到背板上的点可由用户选择。