公开(公告)号：US07223670B2

公开(公告)日：2007-05-29

申请号：US10923247

申请日：2004-08-20

申请人： Alessandro C. Callegari ,  Stephan A. Cohen ,  Fuad E. Doany

发明人： Alessandro C. Callegari ,  Stephan A. Cohen ,  Fuad E. Doany

IPC分类号： H01L21/76

CPC分类号： H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

摘要： A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

摘要翻译： 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深超极化的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其不会不利地影响（增加）SiCOH介电膜的介电常数。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。

公开(公告)号：US5314709A

公开(公告)日：1994-05-24

申请号：US672248

申请日：1991-03-20

申请人： Fuad E. Doany ,  Gary W. Grube ,  Ravi Saraf

发明人： Fuad E. Doany ,  Gary W. Grube ,  Ravi Saraf

IPC分类号： B41N1/24 ,  B41C1/055 ,  B41M1/12 ,  G03F1/00 ,  G03F7/12 ,  H01L21/308 ,  H01L21/48 ,  H01L23/12 ,  H05K1/09 ,  H05K3/00 ,  H05K3/02 ,  H05K3/12 ,  H01L21/00

CPC分类号： H05K3/1258 ,  G03F7/12 ,  G03F7/202 ,  H01L21/3086 ,  H01L21/4867 ,  H05K1/092 ,  H05K2203/0568 ,  H05K3/0032 ,  Y10S438/945

摘要： The present invention relates to a dry process for forming patterns on a substrate. More particularly, the process contemplates coating an unzippable polymer film with a small amount of desirable UV if required on a substrate; laser ablating said film into a desired pattern or mask; screening a conductive or resistive paste onto the substrate through the ablated features of said mask; heating said substrate and mask to the unzipping temperature of said mask; and, vaporizing said mask and UV absorbing dye if present leaving behind the solid of said conductive or resistive past adhered to the substrate in the desired pattern.

摘要翻译： 本发明涉及一种在基板上形成图案的干法。 更具体地，该方法考虑如果需要在基材上涂覆少量所需UV的不可折叠聚合物膜; 将所述膜激光烧蚀成所需的图案或掩模; 通过所述掩模的烧蚀特征将导电或电阻浆料屏蔽到衬底上; 将所述衬底和掩模加热到所述掩模的解压温度; 并且如果存在的话，蒸发所述掩模和UV吸收染料，使所述导电或电阻性过滤体的固体留在所需图案中附着到基底上。