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公开(公告)号：US20090068840A1
公开(公告)日：2009-03-12
申请号：US12200388
申请日：2008-08-28
IPC分类号： H01L21/304 , C09K3/14
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053 , H01L21/7682 , H01L21/76834
摘要： A polishing liquid is provided, which includes abrasive grains and a surfactant. The abrasive grains contain a first colloidal silica having an average primary particle diameter of 45-80 nm and a second colloidal silica having an average primary particle diameter of 10-25 nm. The weight w1 of the first colloidal silica and the weight w2 of the second colloidal silica satisfy the relationship represented by the following expression 1. 0.63≦w1/(w1+w2)≦0.83 Expression 1
摘要翻译： 提供了包括磨粒和表面活性剂的抛光液。 磨粒含有平均一次粒径为45-80nm的第一胶体二氧化硅和平均一次粒径为10-25nm的第二胶体二氧化硅。 第一胶体二氧化硅的重量w1和第二胶态二氧化硅的重量w2满足下述式1所示的关系。<？在线式描述=“在线式”末端=“铅”≥0.63 <= w1 /（w1 + w2）<= 0.83表达式1 <？in-line-formula description =“In-line Formulas”end =“tail”？>
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32.发明授权Slurry for chemical mechanical polishing and method of manufacturing semiconductor device 有权用于化学机械抛光的浆料和半导体器件的制造方法公开(公告)号：US06924227B2
公开(公告)日：2005-08-02
申请号：US09932943
申请日：2001-08-21
申请人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Nobuo Kawahashi , Masayuki Hattori , Kazuo Nishimoto
发明人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Nobuo Kawahashi , Masayuki Hattori , Kazuo Nishimoto
IPC分类号： H01L21/304 , C09G1/02 , C09K3/14 , H01L21/4763
CPC分类号： C09G1/02 , C09K3/1463
摘要： A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.
摘要翻译： 制造半导体装置的方法在制造工序中使用用于化学抛光的浆料，所述浆料含有包含一次粒径为5〜30nm的胶体粒子的研磨粒子，其中，一次粒子的缔合度为5 或更少。 这种用于化学机械抛光的浆料使得每当对导电材料膜进行CMP处理时，可以最小化侵蚀和刮擦。
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公开(公告)号：US20090061626A1
公开(公告)日：2009-03-05
申请号：US12289271
申请日：2008-10-23
IPC分类号： H01L21/768
CPC分类号： H01L21/02074 , H01L21/76826 , H01L21/76835 , H01L21/7684
摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.
摘要翻译： 公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有 凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行 填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。
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34.发明申请CLEANING COMPOSITION, CLEANING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开清洁组合物，清洁方法和半导体器件的制造方法公开(公告)号：US20080045016A1
公开(公告)日：2008-02-21
申请号：US11833534
申请日：2007-08-03
申请人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/461 , C11D3/37
CPC分类号： C11D11/0047 , C11D3/37 , C11D17/06 , H01L21/02074
摘要： A cleaning composition can decontaminate a surface of a chemically mechanically polished semiconductor substrate having a metal wiring and a low dielectric constant film and can highly remove impurities such as residual abrasive grains, residual polishing waste, and metal ions on the metal wiring and low dielectric constant film without corroding the metal wiring, degrading electric characteristics of the low dielectric constant film, and causing mechanical damage to the low dielectric constant film. A cleaning method of a semiconductor substrate uses the cleaning composition, and a manufacturing method of a semiconductor substrate includes a step of performing the cleaning method.The cleaning composition is used for a chemically mechanically polished surface, and includes organic polymer particles (A) having a crosslinked structure and an average dispersed particle diameter of 10 nm or more and less than 100 nm, and a complexing agent (B).
摘要翻译： 清洁组合物可以对具有金属布线和低介电常数膜的化学机械抛光的半导体衬底的表面进行去污染，并且可以高度去除金属布线上的残留磨粒，残留抛光废料和金属离子等杂质和低介电常数 膜不会腐蚀金属布线，降低低介电常数膜的电特性，并对低介电常数膜造成机械损伤。 半导体衬底的清洁方法使用清洁组合物，并且半导体衬底的制造方法包括执行清洁方法的步骤。 清洁组合物用于化学机械抛光的表面，并且包括具有交联结构和平均分散粒径为10nm以上且小于100nm的有机聚合物粒子（A）和络合剂（B）。
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35.发明申请POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 失效使用其的半导体器件的后CMP处理液体和制造方法公开(公告)号：US20070190770A1
公开(公告)日：2007-08-16
申请号：US11552200
申请日：2006-10-24
IPC分类号： H01L21/44
CPC分类号： H01L21/02074 , C11D1/22 , C11D3/30 , C11D3/3765 , C11D11/0047
摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译： 提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂 基团和四甲基氢氧化铵。 树脂颗粒以0.01至1重量％的浓度掺入。 处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。
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36.发明授权Polishing slurry for use in CMP of SiC series compound, polishing method, and method of manufacturing semiconductor device 失效用于SiC系列化合物CMP的研磨浆料，研磨方法以及半导体装置的制造方法公开(公告)号：US06995090B2
公开(公告)日：2006-02-07
申请号：US10326407
申请日：2002-12-23
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053 , H01L21/76834 , H01L21/7684
摘要： A polishing slurry for CMP of an SiC series compound film, includes colloidal silica having a primary particle diameter ranging from 5 nm to 30 nm, and at least one acid selected from the group consisting of an amino acid having a benzene ring and an organic acid having a heterocycle.
摘要翻译： SiC系复合膜的CMP用抛光浆料，包括一次粒径为5nm〜30nm的胶体二氧化硅，以及选自具有苯环和有机酸的氨基酸中的至少一种酸 具有杂环。
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37.发明授权Post-CMP treating liquid and manufacturing method of semiconductor device using the same 失效后CMP处理液和使用其的半导体器件的制造方法公开(公告)号：US07655559B2
公开(公告)日：2010-02-02
申请号：US11552200
申请日：2006-10-24
IPC分类号： H01L21/20
CPC分类号： H01L21/02074 , C11D1/22 , C11D3/30 , C11D3/3765 , C11D11/0047
摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译： 提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂 基团和四甲基氢氧化铵。 树脂颗粒以0.01至1重量％的浓度掺入。 处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。
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公开(公告)号：US20050003666A1
公开(公告)日：2005-01-06
申请号：US10902940
申请日：2004-08-02
IPC分类号： B24B57/02 , B24B37/00 , C09G1/02 , H01L21/304 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/7684
摘要： CMP slurry contains a polishing component to polish a region to be polished, which includes at least one of a sub-region made of insulative material and a sub-region made of conductive material, and a restoring component to restore a scratch caused on the region to be polished. The scratch can thus be restored during the polishing.
摘要翻译： CMP浆料包含抛光部件以抛光待抛光区域，其包括由绝缘材料制成的子区域和由导电材料制成的子区域中的至少一个以及恢复部件以恢复在该区域上产生的划痕 被抛光。 因此可以在抛光期间恢复划痕。
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公开(公告)号：US06790769B2
公开(公告)日：2004-09-14
申请号：US10269993
申请日：2002-10-15
IPC分类号： H01L214763
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/7684
摘要： A method of manufacturing a semiconductor device includes forming an insulation film having a recess above a semiconductor substrate, depositing a conductive film on the insulation film and filming conductive film in the recess, and polishing the conductive film by a CMP process using CMP slurry in order to selectively leave the conductive film in the recess, the CMP slurry including a polishing component and a restoring component, thereby reducing a scratch formed on at least one of the insulation film and the conductive film by causing the scratch to be filled.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成具有凹陷的绝缘膜，在绝缘膜上沉积导电膜并在凹槽中形成成膜导电膜，并通过使用CMP浆料的CMP工艺按顺序对导电膜进行抛光 为了选择性地将导电膜留在凹部中，CMP浆料包括抛光组分和恢复组分，从而通过引起划痕来减少形成在绝缘膜和导电膜中的至少一个上的划痕。
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公开(公告)号：US06945854B2
公开(公告)日：2005-09-20
申请号：US10960019
申请日：2004-10-08
IPC分类号： B24B37/00 , B24B57/02 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/768 , B24B1/00 , B24B7/00
摘要： Provided is a semiconductor device fabrication apparatus comprising: a filter which contains a polar crystal, and filters pure water or a liquid containing pure water as a solvent; and a working section which has a pressing mechanism configured to apply a pressure to said filter, and supplies the filtered pure water or the filtered liquid containing pure water as a solvent to a surface of an object to be polished or cleaned, thereby performing a polishing process or cleaning process.
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