公开(公告)号：US08372202B2

公开(公告)日：2013-02-12

申请号：US12539633

申请日：2009-08-12

申请人： Hitoshi Kato ,  Manabu Honma

发明人： Hitoshi Kato ,  Manabu Honma

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： H01L21/02104 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable including a substrate receiving area; a first reaction gas supplier for supplying a first reaction gas to a surface of the turntable having the substrate receiving area; a second reaction gas supplier, arranged away from the first reaction gas supplier along a circumferential direction of the turntable, for supplying a second reaction gas to the surface; a separation area located along the circumferential direction between a first process area of the first reaction gas and a second process area of the second reaction gas; a separation gas supplier for supplying a first separation gas to both sides of the separation area; a first heating unit for heating the first separation gas to the separation gas supplier; an evacuation opening for evacuating the gases supplied to the turntable; and a driver for rotating the turntable in the circumferential direction.

摘要翻译： 公开的薄膜沉积设备包括：转盘，其包括基板接收区域; 第一反应气体供应器，用于向具有基板接收区域的转台的表面供应第一反应气体; 第二反应气体供应器，沿着转台的圆周方向布置成远离第一反应气体供应器，用于向表面供应第二反应气体; 沿着圆周方向位于第一反应气体的第一处理区域和第二反应气体的第二处理区域之间的分离区域; 用于将分离气体供给到分离区域的两侧的分离气体供给装置; 第一加热单元，用于将第一分离气体加热到分离气体供应器; 用于排出供应到转台的气体的排气口; 以及用于在圆周方向上旋转转盘的驱动器。

公开(公告)号：US20110139074A1

公开(公告)日：2011-06-16

申请号：US12963673

申请日：2010-12-09

申请人： HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

IPC分类号： C23C16/458 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45578

摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

摘要翻译： 一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间， 可能流经第二空间而不是第一空间。

公开(公告)号：US20100132615A1

公开(公告)日：2010-06-03

申请号：US12627144

申请日：2009-11-30

申请人： HITOSHI KATO ,  Manabu Honma

发明人： HITOSHI KATO ,  Manabu Honma

IPC分类号： C23C16/46 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45578

摘要： In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space.

摘要翻译： 在成膜装置中，第一分离气体从分离气体供给部排出到供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域。 提供加热器以通过辐射热来加热转台。 外侧壁构件设置在真空室的底部，以在设置加热器的区域中围绕转台。 空间形成构件设置在转台的旋转方向上彼此相邻的分隔区域之间并且从外侧壁构件延伸以在转台之间形成狭窄的空间。 吹扫气体从转台的下侧流过转台的外侧，通过狭窄的空间沿径向流动。

公开(公告)号：US20100055319A1

公开(公告)日：2010-03-04

申请号：US12550528

申请日：2009-08-31

申请人： Hitoshi Kato ,  Manabu Honma

发明人： Hitoshi Kato ,  Manabu Honma

IPC分类号： C23C16/46 ,  C23C16/458

CPC分类号： C23C16/52 ,  C23C16/45544 ,  C23C16/45565 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771

摘要： A film deposition apparatus for depositing a thin film on a substrate by feeding at least two kinds of reaction gases in a vacuum chamber includes a turntable; a substrate placement part on the turntable; a first and a second reaction gas feed part provided apart from each other to feed a first and a second reaction gas into a first and a second process region, respectively, on the turntable; a separation region positioned between the first and second process regions and including a first separation gas feed part to feed a first separation gas and a ceiling surface; a center part region positioned inside the vacuum chamber and including an ejection opening for ejecting a second separation gas; an evacuation port; and a drive part to rotate the turntable so that the substrate passes through the first and second process regions at different angular velocities of the turntable.

摘要翻译： 一种用于通过在真空室中馈送至少两种反应气体而将薄膜沉积在基底上的成膜装置包括转台; 转盘上的基板放置部分; 第一和第二反应气体供给部，彼此分开设置，以将第一和第二反应气体分别输送到转台上的第一和第二处理区域; 位于所述第一处理区域和所述第二处理区域之间并且包括用于供给第一分离气体和顶面的第一分离气体进料部分的分离区域; 位于真空室内的中心部分区域，并且包括用于喷射第二分离气体的喷射口; 撤离港 以及用于旋转转盘的驱动部件，使得基板以不同的转台角速度穿过第一和第二处理区域。

公开(公告)号：US20110159187A1

公开(公告)日：2011-06-30

申请号：US12969757

申请日：2010-12-16

申请人： Hitoshi KATO ,  Manabu Honma ,  Yasushi Takeuchi

发明人： Hitoshi KATO ,  Manabu Honma ,  Yasushi Takeuchi

IPC分类号： C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC分类号： H01L21/0228 ,  C23C16/45544 ,  C23C16/45548 ,  C23C16/45557 ,  C23C16/45563 ,  C23C16/45591 ,  C23C16/4585 ,  H01L21/67706

摘要： A film deposition apparatus includes a separation member that extends to cover a rotation center of the turntable and two different points on a circumference of the turntable above the turntable, thereby separating the inside of the chamber into a first area and a second area; a first reaction gas supplying portion that supplies a first reaction gas toward the turntable in the first area; a second reaction gas supplying portion that supplies a second reaction gas toward the turntable in the second area; a first evacuation port that evacuates the first reaction gas and the first separation gas that converges with the first reaction gas; and a second evacuation port that evacuates the second reaction gas and the first separation gas that converges with the second reaction gas.

摘要翻译： 一种成膜装置，包括：分离部件，该分离部件延伸以覆盖转台的旋转中心，并且在转盘上方的转盘的圆周上的两个不同点，从而将腔室的内部分离成第一区域和第二区域; 第一反应气体供给部，其向第一区域内的转台供给第一反应气体; 第二反应气体供给部，其向第二区域的转台供给第二反应气体; 排出第一反应气体和与第一反应气体会聚的第一分离气体的第一排气口; 以及抽出第二反应气体和与第二反应气体会聚的第一分离气体的第二排气口。

公开(公告)号：US20100132614A1

公开(公告)日：2010-06-03

申请号：US12620750

申请日：2009-11-18

申请人： HITOSHI KATO ,  Manabu Honma

发明人： HITOSHI KATO ,  Manabu Honma

IPC分类号： C23C16/50 ,  C23C16/00

CPC分类号： C23C16/4551 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  H01L21/6719 ,  H01L21/67703

摘要： A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.

摘要翻译： 一种成膜装置，包括具有用于支撑基板的基板放置区域的旋转台，包括容器和顶板的真空容器，构造成打开和关闭顶板的开闭机构，布置成穿过的反应气体喷嘴 并且由所述容器的外壁支撑，以相对于所述旋转台的旋转中心位于不同的角度位置，以面对所述基板放置区域通过的区域，所述反应气体喷嘴具有沿径向布置的气体排出口， 将相应的反应气体供应到晶片，从而形成相应的处理区域，放电气体供应单元位于处理区域之间的角位置处，以供应净化气体，以形成隔离区域，隔离区域将过程区域的气氛彼此隔离;以及 排气单元构造成排出真空容器内的气氛。

公开(公告)号：US20100055351A1

公开(公告)日：2010-03-04

申请号：US12550468

申请日：2009-08-31

申请人： HITOSHI KATO ,  Kazuteru Obara ,  Manabu Honma

发明人： HITOSHI KATO ,  Kazuteru Obara ,  Manabu Honma

IPC分类号： C23C16/46 ,  C23C16/00 ,  C23C16/44 ,  C23C16/52

CPC分类号： C23C16/45551 ,  C23C16/45521 ,  C23C16/45563 ,  C23C16/46

摘要： A disclosed film deposition apparatus includes a susceptor having in one surface a substrate receiving portion provided rotatably in a chamber; a heating unit including plural independently controllable heating portions, thereby heating the susceptor; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 所公开的膜沉积设备包括：基座，其在一个表面中具有可旋转地设置在腔室中的基底接收部分; 加热单元，包括多个可独立控制的加热部分，从而加热基座; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US20100055317A1

公开(公告)日：2010-03-04

申请号：US12549590

申请日：2009-08-28

申请人： HITOSHI KATO ,  Manabu Honma

发明人： HITOSHI KATO ,  Manabu Honma

IPC分类号： C23C16/46 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45565 ,  C23C16/52 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771

摘要： A film deposition apparatus for forming a thin film by supplying a first reactant gas and a second reactant gas in a vacuum container includes a rotation table, a first reactant gas supply unit and a second reactant gas supply unit extending radially at a first angular position and at a second angular position with respect to a rotation center, respectively, a first purge gas supply unit disposed at a third angular position between the first angular position and the second angular position, a first space having a first height in an area including the first angular position, a second space having a second height in an area including the second angular position, a third space disposed in an area including the third angular position having a height lower than the first height and the second height, and a heating unit configured to heat the first purge gas.

摘要翻译： 通过在真空容器中供应第一反应气体和第二反应气体来形成薄膜的成膜装置包括旋转台，第一反应气体供应单元和在第一角度位置径向延伸的第二反应气体供应单元， 在相对于旋转中心的第二角度位置分别设置在第一角度位置和第二角度位置之间的第三角度位置处的第一吹扫气体供应单元，第一空间在包括第一角度位置的区域中具有第一高度 角度位置，在包括第二角位置的区域中具有第二高度的第二空间，设置在包括具有低于第一高度和第二高度的高度的第三角位置的区域中的第三空间;以及加热单元， 加热第一吹扫气体。

公开(公告)号：US20100055312A1

公开(公告)日：2010-03-04

申请号：US12552315

申请日：2009-09-02

申请人： HITOSHI KATO ,  Manabu Honma ,  Tomoki Haneishi ,  Katsuyoshi Aikawa

发明人： HITOSHI KATO ,  Manabu Honma ,  Tomoki Haneishi ,  Katsuyoshi Aikawa

IPC分类号： C23C16/455 ,  B05C11/00

CPC分类号： C23C16/4585 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45551 ,  C23C16/52

摘要： In a film deposition apparatus which deposits a thin film on a substrate by supplying first and second reactive gases in a vacuum chamber, there are provided a turntable, a first reactive gas supplying portion and a second reactive gas supplying portion which are arranged to extend from circumferential positions of the turntable to a center of rotation of the turntable, a first separation gas supplying portion arranged between the first and second reactive gas supplying portions, a first space having a first height and including the first separation gas supplying portion, a second space having a second height and including the second reactive gas supplying portion, a third space having a height lower than the first height and the second height and including the first separation gas supplying portion, a position detecting unit detecting a rotation position of the turntable, and a detection part arranged at a circumferential portion of the turntable and detected by the position detecting unit.

摘要翻译： 在通过在真空室中供应第一和第二反应气体而在基板上沉积薄膜的成膜装置中，设置有转盘，第一反应气体供应部分和第二反应气体供应部分， 所述转盘的周向位置与所述转台的旋转中心相对，设置在所述第一和第二反应气体供给部之间的第一分离气体供给部，具有第一高度并且包括所述第一分离气体供给部的第一空间， 具有第二高度并且包括第二反应气体供给部的第三空间，具有低于第一高度的高度的第三空间和包括第一分离气体供给部的第二高度的位置检测单元，检测转台的旋转位置，以及 检测部，其布置在转盘的圆周部分，并通过位置检测来检测 单位

公开(公告)号：US08746170B2

公开(公告)日：2014-06-10

申请号：US12916667

申请日：2010-11-01

申请人： Kohichi Orito ,  Manabu Honma ,  Tatsuya Tamura

发明人： Kohichi Orito ,  Manabu Honma ,  Tatsuya Tamura

IPC分类号： C23C16/52 ,  C23C16/458 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/67253 ,  C23C16/45502 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45587 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T137/8376

摘要： A vacuum chamber is evacuated through a first evacuation passage provided with a first valve and a second evacuation passage provided with a second valve. An opening degree of the first valve is adjusted so that a pressure in the vacuum chamber becomes substantially equal to a process pressure P; an opening degree of a butterfly valve further provided in the second evacuation passage is adjusted to substantially equal to a set value determined by a table in order to set flow rates of gases to be evacuated through the first evacuation passage and the second evacuation passage to be substantially equal to corresponding set values determined by the recipe; and an opening degree of the second valve is adjusted so that a measurement value of a differential pressure gauge further provided in the second evacuation passage becomes substantially equal to a differential pressure written in the table.

摘要翻译： 通过设置有第一阀的第一抽空通道和设置有第二阀的第二抽空通道抽真空室。 调节第一阀的开度，使得真空室中的压力基本上等于处理压力P; 进一步设置在第二排气通道中的蝶阀的开度被调整为基本上等于由工作台确定的设定值，以便将通过第一抽空通道和第二抽空通道排出的气体的流量设定为 基本上等于由配方确定的相应设定值; 并且调节第二阀的开度，使得进一步设置在第二排气通道中的差压计的测量值变得基本上等于写在工作台中的压差。