公开(公告)号：US06723586B1

公开(公告)日：2004-04-20

申请号：US10018592

申请日：2002-04-01

申请人： Franz Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Franz Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L21332

CPC分类号： H01L21/263 ,  H01L29/1016 ,  H01L29/32 ,  H01L29/7428

摘要： A thyristor includes a semiconductor body having an anode-side base zone of a first conductance type, and having a cathode-side base zone of the second, opposite conductance type, and has cathode-side and anode-side emitter zones. An anode-side defect zone is included within the anode-side base zone, in which the free charge carriers have a reduced life, with a predetermined thickness of at least 20 &mgr;m. The defect zone may be produced by anode-side irradiation of predetermined regions of the semiconductor body with charged particles, and with heat treatment of the semiconductor body in order to stabilize the defect zone.

摘要翻译： 晶闸管包括具有第一导电类型的阳极侧基极区和具有第二相反电导型的阴极侧基极区并具有阴极侧和阳极侧发射极区的半导体本体。 阳极侧缺陷区域包括在阳极侧基区内，其中游离载流子具有降低的寿命，预定厚度至少为20μm。 可以通过用带电粒子的半导体本体的预定区域的阳极侧照射以及半导体本体的热处理以使缺陷区域稳定来产生缺陷区域。

公开(公告)号：US06489187B2

公开(公告)日：2002-12-03

申请号：US09935359

申请日：2001-08-22

申请人： Hans-Joachim Schulze ,  Franz Josef Niedernostheide

发明人： Hans-Joachim Schulze ,  Franz Josef Niedernostheide

IPC分类号： H01L21332

CPC分类号： H01L21/263 ,  H01L29/1016 ,  H01L29/32 ,  H01L29/7428

摘要： The effective doping profile of a finished thyristor is altered with helium ions radiated into a region provided for triggering the thyristor in such a way that the breakover voltage for overhead ignition is increased or reduced. Doping profile changes made in the cathode side half of the anode side base provide effective results, e.g. in the vicinity of the pn junction between the anode side and the cathode side base. The helium ions generate acceptor-type states that lower the effective n doping.

公开(公告)号：US08653556B2

公开(公告)日：2014-02-18

申请号：US12437375

申请日：2009-05-07

申请人： Franz Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Franz Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L29/739

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/7395 ,  H01L29/861

摘要： A vertical semiconductor device includes a semiconductor body, and first and second contacts on opposite sides of the semiconductor body. A plurality of regions are formed in the semiconductor body including, in a direction from the first contact to the second contact, a first region of a first conductivity type, a second region of a second conductivity type; and a third region of the first conductivity type. The third region is electrically connected to the second contact. A semiconductor zone of the second conductivity type and increased doping density is arranged in the second region. The semiconductor zone separates a first part of the second region from a second part of the second region. The semiconductor zone has a maximum doping density exceeding about 1016 cm−3 and a thickness along the direction from the first contact to the second contact of less than about 3 μm.

摘要翻译： 垂直半导体器件包括半导体本体，以及在半导体本体的相对侧上的第一和第二触点。 多个区域形成在半导体本体中，包括从第一接触到第二接触的方向，具有第一导电类型的第一区域和第二导电类型的第二区域; 和第一导电类型的第三区域。 第三区域电连接到第二触点。 第二导电类型的半导体区域和掺杂浓度的增加被布置在第二区域中。 半导体区域将第二区域的第一部分与第二区域的第二部分分开。 半导体区具有超过约1016cm-3的最大掺杂密度和沿着从第一接触到第二接触的方向的厚度小于约3μm。

公开(公告)号：US08415710B2

公开(公告)日：2013-04-09

申请号：US13022386

申请日：2011-02-07

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

IPC分类号： H01L29/74

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/66363 ,  H01L29/7428

摘要： A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.

摘要翻译： 配置为IGBT的双极性功率半导体元件包括半导体本体，其中p掺杂发射极，n掺杂基极，p掺杂基极和n掺杂主发射极在垂直方向上连续布置。 p掺杂发射极具有多个具有局部增加的p型掺杂的高p掺杂区。

公开(公告)号：US20130001640A1

公开(公告)日：2013-01-03

申请号：US13610240

申请日：2012-09-11

申请人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

发明人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

IPC分类号： H01L29/739

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

公开(公告)号：US08252671B2

公开(公告)日：2012-08-28

申请号：US13186470

申请日：2011-07-20

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

IPC分类号： H01L21/425

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

公开(公告)号：US20110127576A1

公开(公告)日：2011-06-02

申请号：US13022386

申请日：2011-02-07

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

IPC分类号： H01L29/74 ,  H01L21/332

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/66363 ,  H01L29/7428

摘要： A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.

摘要翻译： 配置为IGBT的双极性功率半导体元件包括半导体本体，其中p掺杂发射极，n掺杂基极，p掺杂基极和n掺杂主发射极在垂直方向上连续布置。 p掺杂发射极具有多个具有局部增加的p型掺杂的高p掺杂区。

公开(公告)号：US20110018029A1

公开(公告)日：2011-01-27

申请号：US12506844

申请日：2009-07-21

申请人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

发明人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

IPC分类号： H01L29/739

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

公开(公告)号：US20100167509A1

公开(公告)日：2010-07-01

申请号：US12719487

申请日：2010-03-08

申请人： Hans-Joachim Schulze ,  Josef Lutz ,  Franz-Josef Niedernostheide ,  Ralf Siemieniec

发明人： Hans-Joachim Schulze ,  Josef Lutz ,  Franz-Josef Niedernostheide ,  Ralf Siemieniec

IPC分类号： H01L21/263

CPC分类号： H01L21/266 ,  H01L21/263 ,  H01L21/26506 ,  H01L29/0878 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395

摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。

公开(公告)号：US07649244B2

公开(公告)日：2010-01-19

申请号：US11546010

申请日：2006-10-11

申请人： Franz Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Franz Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L29/74

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/7395 ,  H01L29/861

摘要： A vertical semiconductor device comprises a semiconductor body, a first contact and a second contact, wherein a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of a second conductivity type are formed in the semiconductor body in a direction from the first contact to the second contact, wherein a basic doping density of the second semiconductor region is smaller than a doping density of the third semiconductor region, and wherein in the second semiconductor region a semiconductor zone of the second conductivity type is arranged in which the doping density is increased relative to the basic doping density of the second semiconductor region.

摘要翻译： 一种垂直半导体器件包括半导体本体，第一触点和第二触点，其中形成第一导电类型的第一半导体区域，第二导电类型的第二半导体区域和第二导电类型的第三半导体区域 所述半导体本体在从所述第一接触到所述第二接触的方向上，其中所述第二半导体区域的基本掺杂密度小于所述第三半导体区域的掺杂密度，并且其中在所述第二半导体区域中，所述第二半导体区域的半导体区域 布置了导电类型，其中掺杂密度相对于第二半导体区域的基本掺杂密度增加。