公开(公告)号：US5953084A

公开(公告)日：1999-09-14

申请号：US110151

申请日：1998-07-06

申请人： Takayuki Shimada ,  Masaru Kajitani ,  Masaya Okamoto ,  Naofumi Kondo ,  Mikio Katayama ,  Yoshikazu Sakuhana ,  Akihiro Yamamoto ,  Yukinobu Nakata ,  Hirohiko Nishiki ,  Yoshinori Shimada

发明人： Takayuki Shimada ,  Masaru Kajitani ,  Masaya Okamoto ,  Naofumi Kondo ,  Mikio Katayama ,  Yoshikazu Sakuhana ,  Akihiro Yamamoto ,  Yukinobu Nakata ,  Hirohiko Nishiki ,  Yoshinori Shimada

IPC分类号： G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L29/786 ,  G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/136213 ,  G02F1/133345 ,  G02F1/136209 ,  G02F2001/13606 ,  G02F2201/40

摘要： The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

摘要翻译： 本发明的透射型液晶显示装置包括：栅极线; 源线; 以及开关元件，其各自布置在每个栅极线和每个源极线的交叉点附近，每个开关元件的栅电极连接到栅极线，开关元件的源极连接到源极线，以及漏极 所述开关元件连接到用于向液晶层施加电压的像素电极，其中在所述开关元件，所述栅极线和所述源极线之上设置由透明度高的有机膜形成的层间绝缘膜，并且其中 由透明导电膜形成的像素电极设置在层间绝缘膜上。

公开(公告)号：US5852485A

公开(公告)日：1998-12-22

申请号：US806928

申请日：1997-02-26

申请人： Yoshinori Shimada ,  Tetsuro Koyama ,  Hirohiko Nishiki ,  Yoshiharu Kataoka

发明人： Yoshinori Shimada ,  Tetsuro Koyama ,  Hirohiko Nishiki ,  Yoshiharu Kataoka

IPC分类号： G02F1/1343 ,  G02F1/1368

CPC分类号： G02F1/134363 ,  G02F1/1368

摘要： A liquid crystal display device includes an active-matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active-matrix substrate and the counter substrate. The active-matrix substrate includes a plate; gate lines provided on the plate; a gate insulation layer provided on the plate; source lines provided on the gate insulation layer and Refining picture element areas together with the gate lines; switching elements provided at intersections of gate lines and the source lines, the switching elements each including a source electrode and a drain electrode as well as a gate electrode, connecting electrodes each connected to the drain electrode; an interlayer insulation layer provided on the gate insulation layers covering the gate lines, the source lines, and the switching elements; and picture element electrodes and counter electrodes provided on the interlayer insulation layer for driving liquid crystal molecules in the liquid crystal layer. The picture element electrodes are provided in a first direction of the picture element areas, and the counter electrodes are provided in the first direction of the picture element areas and extending over picture element areas.

摘要翻译： 液晶显示装置包括有源矩阵基板; 相对基板; 以及介于有源矩阵基板和对置基板之间的液晶层。 有源矩阵基板包括板; 设在板上的栅极线; 设置在所述板上的栅极绝缘层; 源极线设置在栅极绝缘层上，并与栅极线一起精细化像素区域; 提供在栅极线和源极线的交叉点处的开关元件，每个开关元件包括源电极和漏电极以及栅电极，每个连接到漏电极的连接电极; 设置在覆盖栅极线，源极线和开关元件的栅极绝缘层上的层间绝缘层; 以及设置在用于驱动液晶层中的液晶分子的层间绝缘层上的像素电极和对电极。 像素电极设置在像素区域的第一方向上，并且对置电极设置在像素区域的第一方向上并在像素区域上延伸。

公开(公告)号：US5798812A

公开(公告)日：1998-08-25

申请号：US723956

申请日：1996-09-26

申请人： Hirohiko Nishiki ,  Takayuki Shimada ,  Mikio Katayama

发明人： Hirohiko Nishiki ,  Takayuki Shimada ,  Mikio Katayama

IPC分类号： G02F1/1333 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362

CPC分类号： G02F1/1345 ,  G02F1/133345 ,  G02F1/136286

摘要： An active matrix substrate of the present invention, includes a substrate; a plurality of switching elements and a plurality of pixel electrodes formed in a matrix on the substrate; scanning lines for supplying a scanning signal and for controlling the plurality of switching elements; signal lines for supplying a data signal to the plurality of switching elements formed so as to cross each other; a terminal electrically connected to either each scanning line or each signal line, the terminal being connected to an external terminal. An organic film is formed between adjacent terminals.

摘要翻译： 本发明的有源矩阵基板包括基板; 多个开关元件和在基板上以矩阵形成的多个像素电极; 用于提供扫描信号并用于控制多个开关元件的扫描线; 信号线，用于向形成为彼此交叉的多个开关元件提供数据信号; 电连接到每个扫描线或每个信号线的端子，所述端子连接到外部端子。 在相邻端子之间形成有机膜。

公开(公告)号：US08865516B2

公开(公告)日：2014-10-21

申请号：US13377824

申请日：2010-03-10

申请人： Yoshifumi Ohta ,  Go Mori ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Tetsuya Aita ,  Masahiko Suzuki ,  Okifumi Nakagawa ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Hara

发明人： Yoshifumi Ohta ,  Go Mori ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Tetsuya Aita ,  Masahiko Suzuki ,  Okifumi Nakagawa ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Hara

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L29/45 ,  G02F1/1368 ,  H01L21/02

CPC分类号： H01L29/22 ,  G02F1/1368 ,  G02F2202/10 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

摘要翻译： 本发明提供一种能够实现具有稳定晶体管特性的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管及其制造方法，以及配备有该薄膜晶体管的显示装置。 本发明的氧化物半导体是薄膜晶体管的氧化物半导体。 氧化物半导体包括铟，镓，锌和氧作为构成原子，并且氧化物半导体的氧含量为化学计量条件的87％至95％，以原子单位计为100％。

公开(公告)号：US20130193430A1

公开(公告)日：2013-08-01

申请号：US13391638

申请日：2010-03-29

申请人： Yoshifumi Ota ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Takeshi Hara ,  Tetsuya Aita ,  Masahiko Suzuki ,  Okifumi Nakagawa ,  Kazuo Nakagawa ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Hinae Mizuno

发明人： Yoshifumi Ota ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Takeshi Hara ,  Tetsuya Aita ,  Masahiko Suzuki ,  Okifumi Nakagawa ,  Kazuo Nakagawa ,  Yuuji Mizuno ,  Michiko Takei ,  Yoshiyuki Harumoto

IPC分类号： H01L29/786 ,  H01L33/00

CPC分类号： H01L29/7869 ,  G02F1/1368 ,  H01L27/3258 ,  H01L33/0041

摘要： The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22.

摘要翻译： 本发明提供实现电性能和工艺电阻优异的TFT的氧化物半导体，包括由氧化物半导体形成的沟道层的TFT以及配备有TFT的显示装置。 本发明的氧化物半导体是用于薄膜晶体管的氧化物半导体，其中氧化物半导体包含Ga（镓），In（铟），Zn（锌）和O（氧）作为构成原子，氧化物半导体 具有满足0.01@Zn/（In + Zn）@ 0.22的方程的Zn原子组成。

公开(公告)号：US20130140552A1

公开(公告)日：2013-06-06

申请号：US13581007

申请日：2011-02-22

申请人： Hirohiko Nishiki ,  Yoshimasa Chikama ,  Tetsuya Aita ,  Masahiko Suzuki ,  Michiko Takei ,  Okifumi Nakagawa ,  Yoshiyuki Harumoto ,  Yoshifumi Ohta ,  Takeshi Hara ,  Hinae Mizuno

发明人： Yuuji Mizuno ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Tetsuya Aita ,  Masahiko Suzuki ,  Michiko Takei ,  Okifumi Nakagawa ,  Yoshiyuki Harumoto ,  Yoshifumi Ohta ,  Takeshi Hara

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/786 ,  H01L29/66742 ,  H01L29/7869 ,  H01L29/78693

摘要： A semiconductor device (100) according to the present invention includes: an oxide semiconductor layer (31) formed on an insulating layer (21), the oxide semiconductor layer (31) containing at least one element selected from the group consisting of In, Zn, and Sn; first and second sacrificial layers (41a) and (41b) formed, with an interspace from each other, on the oxide semiconductor layer (31); a second electrode (52a) formed in contact with an upper face of the first sacrificial layer (41a) and an upper face of the oxide semiconductor layer (31); and a third electrode (52b) formed in contact with an upper face of the second sacrificial layer (41b) and an upper face of the oxide semiconductor layer (31). The first and second sacrificial layers (41a) and (41b) contain an oxide having at least one element selected from the group consisting of Zn, Ga, Mg, Ca, and Sr.

摘要翻译： 根据本发明的半导体器件（100）包括：形成在绝缘层（21）上的氧化物半导体层（31），所述氧化物半导体层（31）包含选自In，Zn ，和Sn; 第一和第二牺牲层（41a）和（41b）在氧化物半导体层（31）上形成有彼此的间隙; 形成为与第一牺牲层（41a）的上表面和氧化物半导体层（31）的上表面接触的第二电极（52a）; 以及与第二牺牲层（41b）的上表面和氧化物半导体层（31）的上表面接触形成的第三电极（52b）。 第一和第二牺牲层（41a）和（41b）含有具有选自Zn，Ga，Mg，Ca和Sr中的至少一种元素的氧化物。

公开(公告)号：US20130105788A1

公开(公告)日：2013-05-02

申请号：US13393335

申请日：2010-05-06

申请人： Yoshimasa Chikama ,  Hirohiko Nishiki ,  Yoshifumi Ohta ,  Takeshi Hara ,  Okifumi Nakagawa ,  Tetsuya Aita ,  Masahiko Suzuki ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Kazuo Nakagawa ,  Hinae Mizuno

发明人： Yoshimasa Chikama ,  Hirohiko Nishiki ,  Yoshifumi Ohta ,  Yuuji Mizuno ,  Takeshi Hara ,  Okifumi Nakagawa ,  Tetsuya Aita ,  Masahiko Suzuki ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Kazuo Nakagawa

IPC分类号： H01L29/786

CPC分类号： H01L29/786 ,  G02F1/1368 ,  H01L29/7869

摘要： The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property and credibility, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Si, In, Zn, and O as constituent atoms.

摘要翻译： 本发明提供一种能够实现电性能和可靠性优异的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管，以及配备有该薄膜晶体管的显示装置。 本发明的氧化物半导体是用于薄膜晶体管的氧化物半导体，并且包括Si，In，Zn和O作为构成原子。

公开(公告)号：US20130099227A1

公开(公告)日：2013-04-25

申请号：US13394343

申请日：2010-04-22

申请人： Okifumi Nakagawa ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Yoshifumi Ohta ,  Takeshi Hara ,  Tetsuya Aita ,  Masahiko Suzuki ,  Kazuo Nakagawa ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Hinae Mizuno

发明人： Okifumi Nakagawa ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Yoshifumi Ohta ,  Takeshi Hara ,  Tetsuya Aita ,  Masahiko Suzuki ,  Kazuo Nakagawa ,  Yuuji Mizuno ,  Michiko Takei ,  Yoshiyuki Harumoto

IPC分类号： H01L29/786

CPC分类号： H01L29/786 ,  G02F1/1368 ,  H01L29/7869

摘要： The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms.

摘要翻译： 本发明提供能够实现电性能优异的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管，以及配备有薄膜晶体管的显示装置。 本发明的氧化物半导体是用于薄膜晶体管的氧化物半导体，并且包括Al，In，Zn和O作为构成原子。

公开(公告)号：US20130092923A1

公开(公告)日：2013-04-18

申请号：US13521316

申请日：2011-01-12

申请人： Takeshi Hara ,  Hirohiko Nishiki ,  Yoshifumi Ohta ,  Yoshimasa Chikama ,  Tetsuya Aita ,  Masahiko Suzuki ,  Michiko Takei ,  Okifumi Nakagawa ,  Yoshiyuki Harumoto ,  Hinae Mizuno

发明人： Takeshi Hara ,  Hirohiko Nishiki ,  Yoshifumi Ohta ,  Yuuji Mizuno ,  Yoshimasa Chikama ,  Tetsuya Aita ,  Masahiko Suzuki ,  Michiko Takei ,  Okifumi Nakagawa ,  Yoshiyuki Harumoto

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/786 ,  G02F1/136227 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/1292 ,  H01L29/66742

摘要： An active matrix substrate includes a plurality of pixel electrodes (19a) arranged in a matrix, and a plurality of TFTs (5a) connected to the respective corresponding pixel electrodes (19a). Each TFT (5a) includes a gate electrode (11aa) provided on an insulating substrate (10a), a gate insulating layer (12) covering the gate electrode (11aa), an oxide semiconductor layer (13a) provided on the gate insulating layer (12) over the gate electrode (11aa) and having a channel region (C), and a source electrode (16aa) and a drain electrode (16b) provided on the oxide semiconductor layer (13a), overlapping the gate electrode (11aa) and facing each other with the channel region (C) being interposed between the source and drain electrodes. A protection insulating layer (17) made of a spin-on glass material is provided on the channel region (C) of the oxide semiconductor layer (13a).

摘要翻译： 有源矩阵基板包括以矩阵布置的多个像素电极（19a）和连接到各个相应的像素电极（19a）的多个TFT（5a）。 每个TFT（5a）包括设置在绝缘基板（10a）上的栅电极（11aa），覆盖栅极电极（11aa）的栅极绝缘层（12），设置在栅极绝缘层上的氧化物半导体层 12a）和具有沟道区（C）的栅极电极（11a）和设置在氧化物半导体层（13a）上的源电极（16aa）和漏电极（16b），与栅极电极（11aa）和 沟道区域（C）插入在源极和漏极之间彼此面对。 在氧化物半导体层（13a）的沟道区（C）上设置由旋涂玻璃材料制成的保护绝缘层（17）。

公开(公告)号：US20130023086A1

公开(公告)日：2013-01-24

申请号：US13517079

申请日：2010-08-23

申请人： Yoshimasa Chikama ,  Hiromitsu Katsui ,  Hirohiko Nishiki ,  Yoshifumi Ohta ,  Takeshi Hara ,  Tetsuya Aita ,  Masahiko Suzuki ,  Michiko Takei ,  Okifumi Nakagawa ,  Yoshiyuki Harumoto ,  Hinae Mizuno

发明人： Yoshimasa Chikama ,  Hiromitsu Katsui ,  Hirohiko Nishiki ,  Yoshifumi Ohta ,  Yuuji Mizuno ,  Takeshi Hara ,  Tetsuya Aita ,  Masahiko Suzuki ,  Michiko Takei ,  Okifumi Nakagawa ,  Yoshiyuki Harumoto

IPC分类号： H01L21/336

CPC分类号： H01L27/1225 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/13606 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2201/501 ,  H01L27/1248 ,  H01L27/1288

摘要： An active matrix substrate includes a plurality of pixel electrodes (P) provided in a matrix, and a plurality of TFTs (5) connected to the pixel electrodes (P). Each of the TFTs (5) includes a gate electrode (11a) provided on an insulating substrate, a gate insulating film (12a) provided to cover the gate electrode (11a), an oxide semiconductor layer (13a) provided on the gate insulating film (12a) to overlap the gate electrode (11a), and a source electrode (17a) and a drain electrode (17b) facing each other and being connected to the oxide semiconductor layer (13a). A protective insulating film (14a) is provided between the oxide semiconductor layer (13a) and the source and drain electrodes (17a) and (17b) to cover the oxide semiconductor layer (13a).

摘要翻译： 有源矩阵基板包括设置在矩阵中的多个像素电极（P）和连接到像素电极（P）的多个TFT（5）。 每个TFT（5）包括设置在绝缘基板上的栅极电极（11a），设置成覆盖栅极电极（11a）的栅极绝缘膜（12a），设置在栅极绝缘膜上的氧化物半导体层 （12a）与栅极电极（11a）重叠，并且与氧化物半导体层（13a）连接的源电极（17a）和漏电极（17b）彼此相对。 在氧化物半导体层（13a）和源极和漏极（17a）和（17b）之间设置保护绝缘膜（14a）以覆盖氧化物半导体层（13a）。