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17 条记录 (耗时 0.037 秒)

    Matrix type display device
    6.
    发明授权
    Matrix type display device 失效
    矩阵式显示装置

    公开(公告)号：US5745201A

    公开(公告)日：1998-04-28

    申请号：US725261

    申请日：1996-10-02

    申请人： Katsuhiro Kawai ,  Satoshi Yabuta ,  Masaya Okamoto ,  Masaru Kajitani

    发明人： Katsuhiro Kawai ,  Satoshi Yabuta ,  Masaya Okamoto ,  Masaru Kajitani

    IPC分类号： G02F1/1343 ,  G02F1/13 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L29/786 ,  G02F1/1333

    CPC分类号： G02F1/1309 ,  G02F1/133512 ,  G02F2001/136268

    摘要： An object of the invention is to facilitate identifying the display color of each pixel during a test process and to apply a correction to a defective switching device in accordance with a test criterion established for each display color. On one transparent substrate, there are formed gate wiring and source wirings intersecting at right angles to each other so that insulation therebetween is maintained, and a pixel electrode and a TFT device are formed for each pixel, thus constructing one substrate member. On another transparent substrate, there is formed a counter electrode facing the pixel electrodes, and identifying means for identifying the display color of each pixel is formed on the side opposite from the side where the counter electrode is formed, the identifying means then being covered with a light-blocking member, thus constructing the another substrate member. The light-blocking member contains openings formed therethrough in portions facing the pixel electrodes. Since the display color of each pixel can be identified using the identifying means, a defective switching device in a pixel can be corrected in accordance with a correction criterion established for each display color.

    摘要翻译： 本发明的目的是便于在测试过程期间识别每个像素的显示颜色，并根据为每个显示颜色建立的测试标准对缺陷开关设备应用校正。 在一个透明基板上形成栅极布线和源极布​​线，彼此成直角交叉，从而保持它们之间的绝缘，并且为每个像素形成像素电极和TFT器件，从而构成一个基板部件。 在另一透明基板上形成面对像素电极的对置电极，并且在与形成对置电极的一侧相反的一侧形成用于识别每个像素的显示颜色的识别装置，然后识别装置被覆盖 遮光构件，从而构成另一基板构件。 遮光构件包括在与像素电极相对的部分中形成的开口。 由于可以使用识别装置来识别每个像素的显示颜色，所以可以根据为每个显示颜色建立的校正标准来校正像素中的有缺陷的切换装置。

    Method of manufacturing active matrix substrate
    8.
    发明授权
    Method of manufacturing active matrix substrate 失效
    有源矩阵基板的制造方法

    公开(公告)号：US5821133A

    公开(公告)日：1998-10-13

    申请号：US576036

    申请日：1995-12-21

    申请人： Katsuhiro Kawai ,  Mikio Katayama ,  Satoshi Yabuta ,  Masaru Kajitani

    发明人： Katsuhiro Kawai ,  Mikio Katayama ,  Satoshi Yabuta ,  Masaru Kajitani

    IPC分类号： G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/45 ,  H01L21/786

    CPC分类号： H01L29/66765 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/458

    摘要： A simplified method of manufacturing an active matrix substrate is disclosed. Gate wires, gate electrodes, gate insulating films, an etching stopper layer, semiconductor layers and contact layers are formed on an electrically insulating substrate. Pixel electrode material films, second electrical conductor films and second insulating films are formed successively on the substrate. The second insulating film and the second electrical conductor film are simultaneously patterned, so that source wires, source electrodes and drain electrodes are formed from the second electrical conductor film, and a protective film from the second insulating film. Then, the pixel electrode material film is patterned thereby to form pixel electrodes in a plurality of regions defined by the gate wires and the source wires.

    摘要翻译： 公开了制造有源矩阵衬底的简化方法。 在绝缘基板上形成栅极线，栅电极，栅极绝缘膜，蚀刻停止层，半导体层和接触层。 在基板上依次形成像素电极材料膜，第二导电膜和第二绝缘膜。 同时对第二绝缘膜和第二导电膜进行构图，从而从第二导电膜形成源极线，源电极和漏电极以及来自第二绝缘膜的保护膜。 然后，对像素电极材料膜进行图案化，从而在由栅极线和源极线限定的多个区域中形成像素电极。

    Method of ashing resist and apparatus therefor
    10.
    发明授权
    Method of ashing resist and apparatus therefor 失效
    抗灰化方法及其设备

    公开(公告)号：US5688410A

    公开(公告)日：1997-11-18

    申请号：US581197

    申请日：1995-12-29

    申请人： Masaru Kajitani ,  Satoshi Yabuta ,  Katsuhiro Kawai ,  Masaya Okamoto

    发明人： Masaru Kajitani ,  Satoshi Yabuta ,  Katsuhiro Kawai ,  Masaya Okamoto

    IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/31138 ,  G03F7/427

    摘要： An object of the invention is to enhance the ashing speed of resist. A parallel plate electrode type plasma etching device is used in a mixed gas atmosphere of SF.sub.6 gas and O.sub.2 gas with the concentration of SF.sub.6 gas defined within 5 vol. % to 15 vol. %. A substrate to be treated, coated with a resist of hydrocarbon polymer is placed on a lower electrode. A high frequency electric power is applied to an upper electrode and lower electrode placed parallel to each other, and a plasma of mixed gas is generated in the reactor. A chemical reaction is induced in the resist and active ions of the plasma to vaporize and remove the resist.

    摘要翻译： 本发明的目的是提高抗蚀剂的灰化速度。 在SF6气体和O 2气体的混合气体气氛中使用平行平板电极型等离子体蚀刻装置，其中SF 6气体的浓度定义在5体积内。 ％至15体积 ％。 将待处理的基材，涂覆有碳氢聚合物的抗蚀剂放置在下电极上。 将高频电力施加到彼此平行放置的上电极和下电极，并且在反应器中产生混合气体的等离子体。 在等离子体的抗蚀剂和活性离子中引起化学反应以蒸发并除去抗蚀剂。