公开(公告)号：US07703066B2

公开(公告)日：2010-04-20

申请号：US11185945

申请日：2005-07-21

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G06F17/50 ,  G03F1/00 ,  H01L21/00

CPC分类号： G03F1/70

摘要： A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.

摘要翻译： 制造曝光掩模的方法包括：生成或准备与待处理的掩模坯料基板相关的平坦度变化数据为曝光掩模，平坦度变化数据是与掩模坯料基板 被曝光装置的卡盘单元卡住，基于平坦度变化数据生成要在掩模毛坯基板上绘制的图案的位置校正数据，使得曝光掩模的掩模图案在预定位置处于 曝光掩模由卡盘单元卡住，并且在掩模板基板上绘制图案，绘制包括绘制图案的图案，并校正图案的绘制位置，并将对应于图案和位置校正数据的绘图数据输入到 绘图装置。

公开(公告)号：US07629088B2

公开(公告)日：2009-12-08

申请号：US11504049

申请日：2006-08-15

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03F1/00

CPC分类号： G03F1/72

摘要： According to an aspect of the invention, there is provided a mask defect repairing method of repairing a defect caused by a foreign object on a light transmissive photomask, the method including moving the foreign object on a light transmission section of the light transmissive photomask using a manipulator, and placing the foreign object on a shielding section of the light transmissive photo mask.

摘要翻译： 根据本发明的一个方面，提供了一种在透光光掩模上修复由异物引起的缺陷的掩模缺陷修复方法，所述方法包括使用光透射光掩模将异物移动到透光光掩模的光透射部分 操纵器，并将异物放置在透光光罩的屏蔽部分上。

公开(公告)号：US07329475B2

公开(公告)日：2008-02-12

申请号：US10896968

申请日：2004-07-23

申请人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

发明人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

IPC分类号： G03F1/00

CPC分类号： G03F1/60

摘要： Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is νoτ μoρε τηαν 0.5 μm is selected.

摘要翻译： 假设一对条状区域沿着要形成掩模图案的基板的顶表面的外周的一对相对侧的每一个内部从2mm延伸到10mm，具有2mm的边缘 在其长度方向上的每一端排除的部分，在水平和垂直方向上以0.05-0.35mm的间隔测量从衬底顶表面上的带状区域到条状区域的最小二乘平面的高度， 并且选择其中所有测量点中的高度的最大值和最小值之间的差值为0.5微米的磷酸三钙的基底。

公开(公告)号：US20070134563A1

公开(公告)日：2007-06-14

申请号：US11600783

申请日：2006-11-17

申请人： Kazuya Fukuhara ,  Masamitsu Itoh ,  Takashi Sato

发明人： Kazuya Fukuhara ,  Masamitsu Itoh ,  Takashi Sato

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F7/70425

摘要： A photomask is disclosed, which includes a substrate transparent to irradiation light, a low density diffraction area having a plurality of low-density arranged light reducing portions which are arranged at a low density on the transparent substrate at a period more than twice the wavelength of the irradiation light, and a high density diffraction area having a plurality of high-density arranged light reducing portions which are arranged at a high density on the transparent substrate at a period less than twice the wavelength of the irradiation light and have different optical characteristics from the low-density arranged light reducing portions.

摘要翻译： 公开了一种光掩模，其包括对照射光透明的基板，低密度衍射区域，其具有多个低密度排列的减少光的部分，其以低于两倍于 照射光和具有多个高密度排列减光部的高密度衍射区域，该多个高密度排列的减光部分以低于照射光的波长的两倍的周期以高密度排列在透明基板上，并且具有不同于 低密度排列的光减少部分。

公开(公告)号：US20070048631A1

公开(公告)日：2007-03-01

申请号：US11504049

申请日：2006-08-15

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03C5/00 ,  G21K5/00 ,  G03F1/00

CPC分类号： G03F1/72

摘要： According to an aspect of the invention, there is provided a mask defect repairing method of repairing a defect caused by a foreign object on a light transmissive photomask, the method including moving the foreign object on a light transmission section of the light transmissive photomask using a manipulator, and placing the foreign object on a shielding section of the light transmissive photo mask.

摘要翻译： 根据本发明的一个方面，提供了一种在透光光掩模上修复由异物引起的缺陷的掩模缺陷修复方法，所述方法包括使用光透射光掩模将异物移动到透光光掩模的光透射部分 操纵器，并将异物放置在透光光罩的屏蔽部分上。

公开(公告)号：US20060172205A1

公开(公告)日：2006-08-03

申请号：US11342677

申请日：2006-01-31

申请人： Hideaki Sakurai ,  Tooru Shibata ,  Masato Saito ,  Masamitsu Itoh

发明人： Hideaki Sakurai ,  Tooru Shibata ,  Masato Saito ,  Masamitsu Itoh

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F7/70625 ,  G03F7/70558 ,  Y10S430/143

摘要： A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (≧2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1≦i≦M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

公开(公告)号：US20050079639A1

公开(公告)日：2005-04-14

申请号：US10968992

申请日：2004-10-21

申请人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

发明人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

IPC分类号： G03F7/30 ,  H01L21/027 ,  H01L21/304 ,  H01L21/66

CPC分类号： G03F7/30 ,  Y10S438/906

摘要： A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

公开(公告)号：US5188706A

公开(公告)日：1993-02-23

申请号：US494397

申请日：1990-03-16

申请人： Masaru Hori ,  Masamitsu Itoh

发明人： Masaru Hori ,  Masamitsu Itoh

IPC分类号： B81B3/00 ,  B81C1/00 ,  G03F1/22 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F1/22 ,  B81C1/00666 ,  B81C2201/017

摘要： An X-ray mask can be manufactured by forming an X-ray transmitting thin film on a mask support, forming an X-ray absorber thin film on the X-ray transmitting thin film, and patterning the X-ray absorber thin film with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film.

公开(公告)号：US09808841B2

公开(公告)日：2017-11-07

申请号：US14342718

申请日：2012-06-22

申请人： Yoshihito Kobayashi ,  Masamitsu Itoh ,  Taro Inada ,  Jun Watanabe

发明人： Yoshihito Kobayashi ,  Masamitsu Itoh ,  Taro Inada ,  Jun Watanabe

IPC分类号： B08B7/00 ,  G03F7/20

CPC分类号： B08B7/0028 ,  B08B7/0014 ,  G03F7/707 ,  G03F7/70925

摘要： There is provided a reticle chuck cleaner A for cleaning a reticle chuck of an apparatus, as a reticle chuck cleaner that allows easy cleaning of a reticle chuck in a vacuum chamber of an apparatus without exposing the chamber to the atmosphere and contributes to improvement of the operating ratio of the apparatus, including: an adhesive layer 1 to be adhered to a chuck region of the reticle chuck; a support layer 2 laminated on the adhesive layer 1; and a substrate 3 having a shape capable of being carried to the reticle chuck, the support layer 2 and the substrate 3 being partially bonded together in an adhesive region 41 of a partial adhesive layer 4.

公开(公告)号：US09377682B2

公开(公告)日：2016-06-28

申请号：US13423043

申请日：2012-03-16

申请人： Shingo Kanamitsu ,  Masamitsu Itoh

发明人： Shingo Kanamitsu ,  Masamitsu Itoh

IPC分类号： H01L29/06 ,  H01L21/30 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate.

摘要翻译： 根据一个实施例，模板衬底包括衬底和掩模。 衬底包括形成在衬底的上表面的中心部分中的台面区域。 所述台面区域被构造为在所述台面区域周围突出多于所述基板的区域。 杂质被引入到台面区域的周边部分的部分区域的上层部分中。 掩模膜设置在基板的上表面上。