公开(公告)号：US08432001B2

公开(公告)日：2013-04-30

申请号：US12300177

申请日：2007-05-10

申请人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： G11B9/02

摘要： Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.

摘要翻译： 提供一种用于从信息存储介质的表面电荷读取信息的电场信息读取头，电场信息读取头包括半导体衬底，该半导体衬底具有形成在面向记录的表面的一端的中心部分的电阻区域 介质，电阻区域被轻掺杂杂质，形成在电阻区两侧的源区和漏区，源极区和漏区比电阻区更加掺杂杂质。 源极区域和漏极区域沿着面向记录介质的半导体衬底的表面延伸，并且电极分别与源极区域和漏极区域电连接。 此外，提供了制造电场信息读取头的方法和在晶片上批量生成电场信息读取头的方法。

公开(公告)号：US07746753B2

公开(公告)日：2010-06-29

申请号：US11650940

申请日：2007-01-09

申请人： Dong-ki Min ,  Seung-bum Hong ,  Hong-sik Park

发明人： Dong-ki Min ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G11B9/00

CPC分类号： G11B9/02 ,  G01Q80/00 ,  G11B9/1409

摘要： An information reproducing apparatus and a method using a semiconductor probe are provided. The information reproducing apparatus includes a semiconductor probe including a semiconductor tip including a channel varying with an electric field generated by an information recording medium; a modulator applying a high frequency modulation signal to the semiconductor probe to form a modulation electric field so as to modulate an information signal induced by the electric field; a signal detector detecting a signal generated by the semiconductor probe; and a demodulator extracting the information signal modulated by the modulation electric field from the signal detected by the signal detector.

摘要翻译： 提供了一种信息再现装置和使用半导体探针的方法。 该信息重放装置包括半导体探针，其包括半导体尖端，该半导体尖端包括由信息记录介质产生的电场变化的通道; 调制器，向所述半导体探针施加高频调制信号以形成调制电场，以调制由所述电场引起的信号信号; 检测由半导体探针产生的信号的信号检测器; 以及解调器，从由信号检测器检测到的信号中提取由调制电场调制的信息信号。

公开(公告)号：US07605014B2

公开(公告)日：2009-10-20

申请号：US11498095

申请日：2006-08-03

申请人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G11B9/1418 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16 ,  G01Q80/00

摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.

摘要翻译： 一种制造具有自对准金属屏蔽的电阻式探头的方法。 该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

公开(公告)号：US07528371B2

公开(公告)日：2009-05-05

申请号：US11448723

申请日：2006-06-08

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G01N23/00

CPC分类号： G01Q70/16 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/02 ,  G11B9/1409 ,  Y10S977/861

摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.

摘要翻译： 提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。 半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。 掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区 并重掺杂第二杂质。 电阻尖端的高度小于电阻尖端的半径。 因此，提高了半导体探针的空间分辨率。

公开(公告)号：US20080225678A1

公开(公告)日：2008-09-18

申请号：US12128788

申请日：2008-05-29

申请人： Hyoung-soo KO ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo KO ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G11B7/00

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US07419843B2

公开(公告)日：2008-09-02

申请号：US11212605

申请日：2005-08-29

申请人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G01Q70/10 ,  G01Q70/16

摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

摘要翻译： 一种制造具有电阻尖端的半导体探针的方法。 该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成 通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。 可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

公开(公告)号：US07406020B2

公开(公告)日：2008-07-29

申请号：US10934561

申请日：2004-09-07

申请人： Seung-bum Hong ,  Sung-dong Kim ,  Ju-hwan Jung ,  Dong-ki Min ,  Hong-sik Park ,  Kyoung-lock Baeck ,  Chul-min Park ,  Yun-seok Kim

发明人： Seung-bum Hong ,  Sung-dong Kim ,  Ju-hwan Jung ,  Dong-ki Min ,  Hong-sik Park ,  Kyoung-lock Baeck ,  Chul-min Park ,  Yun-seok Kim

IPC分类号： G11B7/00

CPC分类号： B82Y10/00 ,  G11B9/02 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/149 ,  G11B13/00 ,  G11B2005/0021

摘要： A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.

摘要翻译： 使用探针技术在存储装置上写入数据的方法。 在包括用于读取和写入数据的电阻式探头的存储器件中写入数据的方法中，由电阻式探头写入数据的铁电写入介质和设置在铁电书写介质的底表面上的下电极 通过向电阻式探针和下部电极施加电压，同时将热和电场同时施加到写入数据的铁电写入介质的区域。

公开(公告)号：US20070042522A1

公开(公告)日：2007-02-22

申请号：US11498095

申请日：2006-08-03

申请人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G11B9/1418 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16 ,  G01Q80/00

摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.

摘要翻译： 一种制造具有自对准金属屏蔽的电阻式探头的方法。 该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

公开(公告)号：US20070040116A1

公开(公告)日：2007-02-22

申请号：US11448723

申请日：2006-06-08

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G12B21/02

CPC分类号： G01Q70/16 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/02 ,  G11B9/1409 ,  Y10S977/861

摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.

摘要翻译： 提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。 半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。 掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区 并重掺杂第二杂质。 电阻尖端的高度小于电阻尖端的半径。 因此，提高了半导体探针的空间分辨率。

公开(公告)号：US20060145806A1

公开(公告)日：2006-07-06

申请号：US11320898

申请日：2005-12-30

申请人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

发明人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

IPC分类号： H01F5/00

CPC分类号： H03K19/16 ,  H01L43/08

摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.