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    MEMS device
    32.
    发明授权
    MEMS device 有权

    公开(公告)号：US10779101B2

    公开(公告)日：2020-09-15

    申请号：US16787577

    申请日：2020-02-11

    Applicant: Infineon Technologies AG

    Inventor： Alfons Dehe ,  Stefan Barzen

    IPC: H04R31/00 ,  B81B3/00 ,  H04R19/00 ,  H04R1/08 ,  B81C1/00

    Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.

    MEMS component and production method for a MEMS component
    33.
    发明授权
    MEMS component and production method for a MEMS component 有权

    公开(公告)号：US10689250B2

    公开(公告)日：2020-06-23

    申请号：US16041083

    申请日：2018-07-20

    Applicant: Infineon Technologies AG

    Inventor： Marc Fueldner ,  Stefan Barzen ,  Alfons Dehe ,  Gunar Lorenz

    IPC: B81C1/00 ,  H04R19/00 ,  B81B3/00 ,  H04R31/00 ,  H04R19/04

    Abstract: In accordance with one exemplary embodiment, a production method for a double-membrane MEMS component comprises the following steps: providing a layer arrangement on a carrier substrate, wherein the layer arrangement has a first and second membrane structure spaced apart from one another and a counterelectrode structure arranged therebetween, wherein a sacrificial material is arranged in an intermediate region between the counterelectrode structure and the first and second membrane structures respectively spaced apart therefrom, and wherein the first membrane structure has an opening structure to the intermediate region with the sacrificial material and partly removing the sacrificial material from the intermediate region in order to obtain a mechanical connection structure comprising the sacrificial material between the first and second membrane structures, which mechanical connection structure is mechanically coupled between the first and second membrane structures and is mechanically decoupled from the counterelectrode structure.

    SOUND TRANSDUCER STRUCTURE AND METHOD FOR MANUFACTURING A SOUND TRANSDUCER STRUCTURE
    34.
    发明申请
    SOUND TRANSDUCER STRUCTURE AND METHOD FOR MANUFACTURING A SOUND TRANSDUCER STRUCTURE 审中-公开

    公开(公告)号：US20200169819A1

    公开(公告)日：2020-05-28

    申请号：US16779203

    申请日：2020-01-31

    Applicant: Infineon Technologies AG

    Inventor： Alfons Dehe ,  Stefan Barzen ,  Marc Fueldner

    IPC: H04R19/04 ,  H04R31/00 ,  H04R7/00 ,  H04R19/00

    Abstract: For manufacturing a sound transducer structure, membrane support material is applied on a first main surface of a membrane carrier material and membrane material is applied in a sound transducing region and an edge region on a surface of the membrane support material. In addition, counter electrode support material is applied on a surface of the membrane material and recesses are formed in the sound transducing region of the membrane material. Counter electrode material is applied to the counter electrode support material and membrane carrier material and membrane support material are removed in the sound transducing region to the membrane material.

    Method for forming a microelectromechanical device
    37.
    发明授权
    Method for forming a microelectromechanical device 有权

    公开(公告)号：US09902612B2

    公开(公告)日：2018-02-27

    申请号：US15629834

    申请日：2017-06-22

    Applicant: Infineon Technologies AG

    Inventor： Alfons Dehe ,  Stefan Barzen ,  Ulrich Krumbein ,  Wolfgang Friza ,  Wolfgang Klein

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C1/00325

    Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.

    System and method for a pumping speaker
    38.
    发明授权
    System and method for a pumping speaker 有权

    公开(公告)号：US09843862B2

    公开(公告)日：2017-12-12

    申请号：US14818836

    申请日：2015-08-05

    Applicant: Infineon Technologies AG

    Inventor： Stefan Barzen

    IPC: H04R29/00 ,  H04R3/06 ,  H04R19/00

    CPC classification number: H04R3/06 ,  H04R19/005 ,  H04R29/001 ,  H04R2201/003

    Abstract: According to an embodiment, a method of operating a speaker with an acoustic pump includes generating a carrier signal having a first frequency by exciting the acoustic pump at the first frequency and generating an acoustic signal having a second frequency by adjusting the carrier signal. In such embodiments, the first frequency is outside an audible frequency range and the second frequency is inside the audible frequency range. Adjusting the carrier signal includes performing adjustments to the carrier signal at the second frequency. Other embodiments include corresponding systems and apparatus, each configured to perform corresponding embodiment methods.

    SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
    39.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20170250112A1

    公开(公告)日：2017-08-31

    申请号：US15055246

    申请日：2016-02-26

    Applicant: Infineon Technologies AG

    Inventor： Stefan Barzen

    IPC: H01L21/768 ,  H01L21/24 ,  H01L23/48

    CPC classification number: H01L21/76898 ,  H01L21/24 ,  H01L21/76838 ,  H01L23/481

    Abstract: A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. The method further comprises modifying the laterally surrounded portion of the semiconductor substrate to form a vertical electrically conductive structure comprising an alloy material. The alloy material is an alloy of the semiconductor substrate material and at least one metal.

    CAPACITIVE MICROPHONE WITH INSULATED CONDUCTIVE PLATE
    40.
    发明申请
    CAPACITIVE MICROPHONE WITH INSULATED CONDUCTIVE PLATE 有权
    带绝缘导电板的电容式麦克风

    公开(公告)号：US20160192086A1

    公开(公告)日：2016-06-30

    申请号：US14582223

    申请日：2014-12-24

    Applicant: Infineon Technologies AG

    Inventor： Stefan Barzen ,  Andre Brockmeier ,  Marc Fueldner ,  Stephan Pindl ,  Wolfgang Friza

    IPC: H04R23/00

    CPC classification number: H04R19/016

    Abstract: A capacitive microphone may include a housing, a membrane, and a first backplate, wherein a first insulating layer may be disposed on a first side of the first backplate facing the membrane and a second insulating layer may be disposed on a second side of the first backplate opposite to the first side of the first backplate. A further insulating layer may be disposed on a side wall of at least one of a plurality of perforation holes in the first backplate. Each conductive surface of the first backplate may be covered with insulating material.

    Abstract translation: 电容麦克风可以包括壳体，膜和第一背板，其中第一绝缘层可以设置在第一背板的面向膜的第一侧上，并且第二绝缘层可以设置在第一绝缘层的第二侧上 背板与第一背板的第一侧相对。 另外的绝缘层可以设置在第一背板中的多个穿孔中的至少一个的侧壁上。 第一背板的每个导电表面可以用绝缘材料覆盖。

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