公开(公告)号：US20190385655A1

公开(公告)日：2019-12-19

申请号：US16009107

申请日：2018-06-14

Applicant: Intel Corporation

Inventor： Chia-Ching Lin ,  Sasikanth Manipatruni ,  Tanay Gosavi ,  Dmitri Nikonov ,  Benjamin Buford ,  Kaan Oguz ,  John J. Plombon ,  Ian A. Young

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/02

Abstract: An apparatus is provided which comprises: a stack comprising a magnetic insulating material (MI such as EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, or graphene), wherein the magnetic insulating material has a first magnetization; a magnet with a second magnetization, wherein the magnet is adjacent to the TMD of the stack; and an interconnect comprising a spin orbit material, wherein the interconnect is adjacent to the magnet.

公开(公告)号：US10217646B2

公开(公告)日：2019-02-26

申请号：US15570968

申请日：2015-06-17

Applicant: Intel Corporation

Inventor： Patricio E. Romero ,  John J. Plombon

IPC: H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L43/12 ,  H01L21/28 ,  H01L23/528 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: Transition metal dry etch by atomic layer removal of oxide layers for device fabrication, and the resulting devices, are described. In an example, a method of etching a film includes reacting a surface layer of a transition metal species of a transition metal-containing film with a molecular oxidant species. The method also includes removing volatile fragments of the reacted molecular oxidant species to provide an oxidized surface layer of the transition metal species. The method also includes reacting the oxidized surface layer of the transition metal species with a molecular etchant. The method also includes removing the reacted oxidized surface layer of the transition metal species and the reacted molecular etchant by volatlilization.

公开(公告)号：US10068845B2

公开(公告)日：2018-09-04

申请号：US15126575

申请日：2014-06-16

Applicant: Intel Corporation

Inventor： Ramanan V. Chebiam ,  Christopher J. Jezewski ,  Tejaswi K. Indukuri ,  James S. Clarke ,  John J. Plombon

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532 ,  H01L21/321

Abstract: Embodiments of the present disclosure describe removing seams and voids in metal interconnects and associated techniques and configurations. In one embodiment, a method includes conformally depositing a metal into a recess disposed in a dielectric material to form an interconnect, wherein conformally depositing the metal creates a seam or void in the deposited metal within or directly adjacent to the recess and heating the metal in the presence of a reactive gas to remove the seam or void, wherein the metal has a melting point that is greater than a melting point of copper. Other embodiments may be described and/or claimed.