公开(公告)号：US11646356B2

公开(公告)日：2023-05-09

申请号：US16238419

申请日：2019-01-02

Applicant: Intel Corporation

Inventor： Tanay Gosavi ,  Chia-ching Lin ,  Raseong Kim ,  Ashish Verma Penumatcha ,  Uygar Avci ,  Ian Young

IPC: H01L29/51 ,  H01L29/78 ,  H01L27/088 ,  H03H9/17 ,  H01L29/423

CPC classification number: H01L29/516 ,  H01L27/0886 ,  H01L29/42356 ,  H01L29/7851 ,  H01L29/78391 ,  H03H9/17

Abstract: Describe is a resonator that uses anti-ferroelectric (AFE) materials in the gate of a transistor as a dielectric. The use of AFE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, additional current drive is also achieved from the piezoelectric response generated to due to AFE material. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above or below the AFE based transistor. Increased drive signal from the AFE results in larger output signal and larger bandwidth.

公开(公告)号：US11605624B2

公开(公告)日：2023-03-14

申请号：US16238421

申请日：2019-01-02

Applicant: Intel Corporation

Inventor： Tanay Gosavi ,  Chia-ching Lin ,  Raseong Kim ,  Ashish Verma Penumatcha ,  Uygar Avci ,  Ian Young

IPC: H01L27/02 ,  H01L49/02

Abstract: Describe is a resonator that uses ferroelectric (FE) material in a capacitive structure. The resonator includes a first plurality of metal lines extending in a first direction; an array of capacitors comprising ferroelectric material; a second plurality of metal lines extending in the first direction, wherein the array of capacitors is coupled between the first and second plurality of metal lines; and a circuitry to switch polarization of at least one capacitor of the array of capacitors. The switching of polarization regenerates acoustic waves. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using metal lines above and adjacent to the FE based capacitors.

公开(公告)号：US10263036B2

公开(公告)日：2019-04-16

申请号：US15508430

申请日：2014-09-25

Applicant: Intel Corporation

Inventor： Sasikanth Manipatruni ,  Dmitri E. Nikonov ,  Asif Khan ,  Raseong Kim ,  Tahir Ghani ,  Ian A. Young

IPC: H01L29/82 ,  H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L27/20 ,  H01L41/20 ,  H01L43/10 ,  H01L27/11507 ,  H01L27/11502 ,  H01L49/02

Abstract: Described is an apparatus which comprises: a magnetic tunneling junction (MTJ) having a free magnetic layer; a piezoelectric layer; and a conducting strain transfer layer coupled to the free magnetic layer and the piezoelectric layer. Described is a method, which comprises: exciting a piezoelectric layer with a voltage driven capacitive stimulus; and writing to a MTJ coupled to the piezoelectric layer via a strain assist layer. Described is also an apparatus which comprises: a transistor; a conductive strain transfer layer coupled to the transistor; and a MTJ device having a free magnetic layer coupled to the conductive strain transfer layer.

公开(公告)号：US20160056252A1

公开(公告)日：2016-02-25

申请号：US14778726

申请日：2013-06-29

Applicant: INTEL CORPORATION

Inventor： Raseong Kim ,  Ian A. Young

IPC: H01L29/423 ,  H03H9/17 ,  H01L27/088

CPC classification number: H01L29/42356 ,  H01L27/0886 ,  H03H9/02259 ,  H03H9/17 ,  H03H9/2405 ,  H03H2009/02314

Abstract: An embodiment includes a first nonplanar transistor including a first fin that includes first source and drain nodes, and a first channel between the first source and drain nodes; a second nonplanar transistor including a second fin that includes second source and drain nodes, and a second channel between the second source and drain nodes; a nonplanar gate on the first fin between the first source and drain nodes and on the second fin between the second source and drain nodes; and first insulation included between the gate and the first fin and second insulation between the gate and the second fin; wherein the gate mechanically resonates at a first frequency when at least one of the gate and the first fin is actuated with alternating current (AC) to produce periodic forces on the gate. Other embodiments are described herein.

Abstract translation: 一个实施例包括第一非平面晶体管，其包括包括第一源极和漏极节点的第一鳍片，以及在第一源极和漏极节点之间的第一沟道; 第二非平面晶体管，包括包括第二源极和漏极节点的第二鳍片，以及在所述第二源极和漏极节点之间的第二沟道; 位于第一源极和漏极节点之间的第一鳍片上的非平面栅极和在第二源极和漏极节点之间的第二鳍片上; 并且所述栅极和所述第一鳍片之间包括第一绝缘体，并且所述栅极和所述第二鳍片之间的第二绝缘体; 其中当所述栅极和所述第一鳍中的至少一个用交流电（AC）致动以在所述栅极上产生周期性力时，所述栅极以第一频率机械谐振。 本文描述了其它实施例。