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    Semiconductor switch with integrated temperature sensor
    31.
    发明授权
    Semiconductor switch with integrated temperature sensor 有权

    公开(公告)号：US09735264B2

    公开(公告)日：2017-08-15

    申请号：US14840925

    申请日：2015-08-31

    Applicant: Infineon Technologies AG

    Inventor： Norbert Krischke ,  Bernhard Auer ,  Robert Illing

    IPC: H01L29/66 ,  H01L29/78 ,  H01L29/40

    CPC classification number: H01L29/7803 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7815

    Abstract: A semiconductor device includes a semiconductor body, at least one wiring layer disposed on the semiconductor body and a field effect transistor integrated in the semiconductor body. The field effect transistor has a plurality of gate electrodes residing in corresponding gate trenches formed in the semiconductor body. A first circuit is integrated in the semiconductor body adjacent to the field effect transistor, and a second circuit is integrated in the semiconductor body remote from the first circuit. A first additional trench is formed in the semiconductor body and includes at least one connecting line which electrically connects the first circuit and the second circuit. The semiconductor device also includes at least one conductive pad formed in the at least one wiring layer. The at least one conductive pad is arranged to at least partially cover the first additional trench to form a shielding of the at least one connecting line.

    COMMUNICATING WITH POWER SWITCHING DEVICES
    33.
    发明申请
    COMMUNICATING WITH POWER SWITCHING DEVICES 有权
    与电源开关器件通讯

    公开(公告)号：US20160226236A1

    公开(公告)日：2016-08-04

    申请号：US14610386

    申请日：2015-01-30

    Applicant: Infineon Technologies AG

    Inventor： Christian Djelassi ,  Hans-Peter Kreuter ,  Robert Illing

    IPC: H02H3/08

    CPC classification number: H02H7/261 ,  H02J7/0032

    Abstract: In one example, a method includes receiving, by a power switching device and via a connector of the power switching device, a signal that causes the power switching device to transition from a first operating mode to a second operating mode in which the power switching device consumes less current than the first operating mode. In this example, the method also includes, responsive to determining, while the power switching device is in the second operating mode, an occurrence of one or more events, outputting, by the power switching device and via the same connector of the power switching device, a signal that indicates the occurrence of the one or more events.

    Abstract translation: 在一个示例中，一种方法包括通过电力开关装置并且经由功率开关装置的连接器接收使得电力开关装置从第一操作模式转换到第二操作模式的信号，其中功率开关装置 比第一种工作模式消耗更少的电流。 在该示例中，该方法还包括响应于在电力开关装置处于第二操作模式时确定一个或多个事件的发生，由电力开关装置和电力开关装置的相同连接器输出 指示发生一个或多个事件的信号。

    Smart electronic switch
    34.
    发明授权
    Smart electronic switch 有权

    公开(公告)号：US11539357B2

    公开(公告)日：2022-12-27

    申请号：US16922984

    申请日：2020-07-07

    Applicant: Infineon Technologies AG

    Inventor： Alexander Mayer ,  Robert Illing ,  Marco Faricelli

    IPC: H03K17/0814 ,  H02H3/08 ,  H03K17/082 ,  H03K17/687 ,  H03K17/08

    Abstract: An integrated circuit may include a power transistor coupled between a supply pin and an output pin; a current sensing circuit configured to sense a load current passing through the power transistor and to provide a respective current sense signal; a first configuration pin; a current output circuit configured to provide a diagnosis current at a current output pin; a diagnosis pin for receiving a diagnosis request signal; and a control circuit configured to: select a characteristic curve representing a current versus time characteristic dependent on a external circuit connected to the first configuration pin; generate a drive signal for the power transistor dependent on the selected characteristic curve and the current sense signal; and control—dependent on a pulse pattern of the diagnosis request signal—the current output circuit to set the value of the diagnosis current such that it represents the load current or the selected characteristic curve.

    SMART ELECTRONIC SWITCH
    37.
    发明申请
    SMART ELECTRONIC SWITCH 有权

    公开(公告)号：US20210028615A1

    公开(公告)日：2021-01-28

    申请号：US16923030

    申请日：2020-07-07

    Applicant: Infineon Technologies AG

    Inventor： Alexander Mayer ,  Robert Illing ,  Marco Faricelli

    IPC: H02H3/087 ,  H02H3/04 ,  H02H3/06 ,  H02H5/04 ,  H02H3/00 ,  H02H1/00 ,  G01R19/165 ,  G01R19/15 ,  H03K5/24 ,  H03M1/34

    Abstract: A circuit may include an electronic switch that has a load current path coupled between an output node and a supply node and that is configured to connect or disconnect the output node and the supply node in accordance with a drive signal. Further, the circuit includes a monitoring circuit that is configured to receive a current sense signal, which represents the load current passing through the load current path, and that is further configured to determine a protection signal based on the current sense signal, a state of the monitoring circuit, and at least one wire parameter. The wire parameter characterizes a wire that is—during operation—connected to the output node, and the protection signal is indicative of whether to disconnect the output node from supply node. Further, the circuit includes a protection circuit connected to the monitoring circuit.

    Semiconductor device having a load current component and a sensor component
    39.
    发明授权
    Semiconductor device having a load current component and a sensor component 有权

    公开(公告)号：US10396067B2

    公开(公告)日：2019-08-27

    申请号：US16259857

    申请日：2019-01-28

    Applicant: Infineon Technologies AG

    Inventor： Stefan Decker ,  Robert Illing ,  Michael Nelhiebel

    IPC: H01L27/088 ,  H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L23/62

    Abstract: A semiconductor device includes a semiconductor body having opposite first and second surfaces. The semiconductor body includes a load current component having a load current transistor area and a sensor component having a sensor transistor area. The load current transistor area and the sensor transistor area share a same transistor unit construction. The load current transistor area includes first and second transistor area parts, and the sensor transistor area includes a third transistor area part. The first and the third transistor area parts differ from the second transistor area part between the first and the third transistor area parts by a load current transistor area element being absent in the second transistor area part. The second transistor area part is electrically disconnected from a parallel connection of the first and second transistor area parts by the load current transistor area element being absent in the second transistor area part.

    Semiconductor device including self-protecting current sensor
    40.
    发明授权
    Semiconductor device including self-protecting current sensor 有权

    公开(公告)号：US10249612B2

    公开(公告)日：2019-04-02

    申请号：US14709583

    申请日：2015-05-12

    Applicant: Infineon Technologies AG

    Inventor： Stefan Decker ,  Robert Illing ,  Michael Nelhiebel

    IPC: H01L27/088 ,  H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L23/62

    Abstract: A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor body includes a load current component having a load current transistor area and a sensor component including a sensor transistor area. The sensor transistor area has first and third transistor area parts differing from a second transistor area part between the first and third transistor area parts by a sensor transistor area element being absent in the second transistor area part. The second transistor area part is electrically disconnected from a parallel connection of the first and third transistor area parts by the sensor transistor area element being absent in the second transistor area part.

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