公开(公告)号：US20150380543A1

公开(公告)日：2015-12-31

申请号：US14738245

申请日：2015-06-12

Applicant: Infineon Technologies AG

Inventor： Robert Zink ,  Stefan Decker ,  Sven Lanzerstorfer

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/40 ,  H01L21/762 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L21/02 ,  H01L29/423

CPC classification number: H01L29/7811 ,  H01L21/0217 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/76202 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/66568 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/7813

Abstract: By thermal oxidation a field oxide layer is formed that lines first and second trenches that extend from a main surface into a semiconductor layer. After the thermal oxidation, field electrodes and trench gate electrodes of power transistor cells are formed in the first and second trenches. A protection cover including a silicon nitride layer is formed that covers a cell area with the first and second trenches. With the protection cover covering the cell area, planar gate electrodes of lateral transistors are formed in a support area of the semiconductor layer.

Abstract translation: 通过热氧化形成场氧化物层，其形成从主表面延伸到半导体层中的第一和第二沟槽。 在热氧化之后，在第一和第二沟槽中形成功率晶体管单元的场电极和沟槽栅电极。 形成包括氮化硅层的保护盖，其覆盖具有第一和第二沟槽的单元区域。 通过覆盖单元区域的保护盖，横向晶体管的平面栅电极形成在半导体层的支撑区域中。

公开(公告)号：US20190157258A1

公开(公告)日：2019-05-23

申请号：US16259857

申请日：2019-01-28

Applicant: Infineon Technologies AG

Inventor： Stefan Decker ,  Robert Illing ,  Michael Nelhiebel

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L27/0266 ,  H01L23/62 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor body having opposite first and second surfaces. The semiconductor body includes a load current component having a load current transistor area and a sensor component having a sensor transistor area. The load current transistor area and the sensor transistor area share a same transistor unit construction. The load current transistor area includes first and second transistor area parts, and the sensor transistor area includes a third transistor area part. The first and the third transistor area parts differ from the second transistor area part between the first and the third transistor area parts by a load current transistor area element being absent in the second transistor area part. The second transistor area part is electrically disconnected from a parallel connection of the first and second transistor area parts by the load current transistor area element being absent in the second transistor area part.

公开(公告)号：US09837530B2

公开(公告)日：2017-12-05

申请号：US14868857

申请日：2015-09-29

Applicant: Infineon Technologies AG

Inventor： Stefan Decker ,  Sven Lanzerstorfer ,  Thorsten Meyer ,  Robert Zink

IPC: H01L29/00 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/40 ,  H01L29/739 ,  H01L29/417

CPC classification number: H01L29/7813 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811

Abstract: A semiconductor device comprises a semiconductor body. The semiconductor body comprises insulated gate field effect transistor cells. At least one of the insulated gate field effect transistor cells comprises a source zone of a first conductivity type, a body zone of a second, complementary conductivity type, a drift zone of the first conductivity type, and a trench gate structure extending into the semiconductor body through the body zone along a vertical direction. The trench gate structure comprises a gate electrode separated from the semiconductor body by a trench dielectric. The trench dielectric comprises a source dielectric part interposed between the gate electrode and the source zone and a gate dielectric part interposed between the gate electrode and the body zone. The ratio of a maximum thickness of the source dielectric part along a lateral direction and the minimum thickness of the gate dielectric part along the lateral direction is at least 1.5.

公开(公告)号：US20160260803A1

公开(公告)日：2016-09-08

申请号：US15157448

申请日：2016-05-18

Applicant: Infineon Technologies AG

Inventor： Thorsten Meyer ,  Stefan Decker ,  Norbert Krischke ,  Christoph Kadow

IPC: H01L29/10 ,  H01L27/088 ,  H01L29/423 ,  H01L21/8234

CPC classification number: H01L29/105 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823807 ,  H01L27/088 ,  H01L29/4236 ,  H01L29/66537 ,  H01L29/78

Abstract: An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel.

Abstract translation: 一种具有场效应晶体管和制造方法的集成电路。 一个实施例提供了包括第一FET和第二FET的集成电路。 第一FET的源极，漏极，栅极中的至少一个电连接到第二FET的源极，漏极，栅极中的相应一个栅极。 第一FET的源极，漏极，栅极以及第二FET的源极，漏极，栅极之间的至少另外的栅极分别连接到电路元件。 沿着第一和第二FET中的每一个的通道的主体的掺杂剂浓度在通道内的峰值位置处具有峰值。

公开(公告)号：US09761665B2

公开(公告)日：2017-09-12

申请号：US15157448

申请日：2016-05-18

Applicant: Infineon Technologies AG

Inventor： Thorsten Meyer ,  Stefan Decker ,  Norbert Krischke ,  Christoph Kadow

IPC: H01L27/148 ,  H01L29/768 ,  H01L29/10 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/423

CPC classification number: H01L29/105 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823807 ,  H01L27/088 ,  H01L29/4236 ,  H01L29/66537 ,  H01L29/78

Abstract: An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel.

公开(公告)号：US20160093728A1

公开(公告)日：2016-03-31

申请号：US14868857

申请日：2015-09-29

Applicant: Infineon Technologies AG

Inventor： Stefan Decker ,  Sven Lanzerstorfer ,  Thorsten Meyer ,  Robert Zink

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/10 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7813 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811

Abstract: A semiconductor device comprises a semiconductor body. The semiconductor body comprises insulated gate field effect transistor cells. At least one of the insulated gate field effect transistor cells comprises a source zone of a first conductivity type, a body zone of a second, complementary conductivity type, a drift zone of the first conductivity type, and a trench gate structure extending into the semiconductor body through the body zone along a vertical direction. The trench gate structure comprises a gate electrode separated from the semiconductor body by a trench dielectric. The trench dielectric comprises a source dielectric part interposed between the gate electrode and the source zone and a gate dielectric part interposed between the gate electrode and the body zone. The ratio of a maximum thickness of the source dielectric part along a lateral direction and the minimum thickness of the gate dielectric part along the lateral direction is at least 1.5.

Abstract translation: 半导体器件包括半导体本体。 半导体本体包括绝缘栅场效应晶体管单元。 绝缘栅场效应晶体管单元中的至少一个包括第一导电类型的源极区，第二互补导电类型的体区，第一导电类型的漂移区和延伸到半导体中的沟槽栅结构 身体通过身体区域沿垂直方向。 沟槽栅极结构包括通过沟槽电介质与半导体本体分离的栅电极。 沟槽电介质包括介于栅极电极和源极区之间的源极介电部分和介于栅极电极和主体区域之间的栅极电介质部分。 源电介质部分沿横向方向的最大厚度与栅电介质部分沿横向方向的最小厚度之比至少为1.5。

公开(公告)号：US20150333060A1

公开(公告)日：2015-11-19

申请号：US14709583

申请日：2015-05-12

Applicant: Infineon Technologies AG

Inventor： Stefan Decker ,  Robert Illing ,  Michael Nelhiebel

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L27/0266 ,  H01L23/62 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor body includes a load current component having a load current transistor area and a sensor component including a sensor transistor area. The sensor transistor area has first and third transistor area parts differing from a second transistor area part between the first and third transistor area parts by a sensor transistor area element being absent in the second transistor area part. The second transistor area part is electrically disconnected from a parallel connection of the first and third transistor area parts by the sensor transistor area element being absent in the second transistor area part.

Abstract translation: 半导体器件包括具有第一表面和与第一表面相对的第二表面的半导体本体。 半导体本体包括具有负载电流晶体管区域的负载电流分量和包括传感器晶体管区域的传感器部件。 传感器晶体管区域具有通过第二晶体管区域部分中不存在的传感器晶体管区域元件而在第一和第三晶体管区域部分之间与第二晶体管区域部分不同的第一和第三晶体管区域部分。 传感器晶体管区域元件在第二晶体管区域部分中不存在第二晶体管区域部分与第一和第三晶体管区域部分的并联连接电断开。

公开(公告)号：US10396067B2

公开(公告)日：2019-08-27

申请号：US16259857

申请日：2019-01-28

Applicant: Infineon Technologies AG

Inventor： Stefan Decker ,  Robert Illing ,  Michael Nelhiebel

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L23/62

Abstract: A semiconductor device includes a semiconductor body having opposite first and second surfaces. The semiconductor body includes a load current component having a load current transistor area and a sensor component having a sensor transistor area. The load current transistor area and the sensor transistor area share a same transistor unit construction. The load current transistor area includes first and second transistor area parts, and the sensor transistor area includes a third transistor area part. The first and the third transistor area parts differ from the second transistor area part between the first and the third transistor area parts by a load current transistor area element being absent in the second transistor area part. The second transistor area part is electrically disconnected from a parallel connection of the first and second transistor area parts by the load current transistor area element being absent in the second transistor area part.

公开(公告)号：US10249612B2

公开(公告)日：2019-04-02

申请号：US14709583

申请日：2015-05-12

Applicant: Infineon Technologies AG

Inventor： Stefan Decker ,  Robert Illing ,  Michael Nelhiebel

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L23/62

Abstract: A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor body includes a load current component having a load current transistor area and a sensor component including a sensor transistor area. The sensor transistor area has first and third transistor area parts differing from a second transistor area part between the first and third transistor area parts by a sensor transistor area element being absent in the second transistor area part. The second transistor area part is electrically disconnected from a parallel connection of the first and third transistor area parts by the sensor transistor area element being absent in the second transistor area part.

公开(公告)号：US09590094B2

公开(公告)日：2017-03-07

申请号：US14738245

申请日：2015-06-12

Applicant: Infineon Technologies AG

Inventor： Robert Zink ,  Stefan Decker ,  Sven Lanzerstorfer

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L29/40 ,  H01L21/265 ,  H01L27/092

CPC classification number: H01L29/7811 ,  H01L21/0217 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/76202 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/66568 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/7813

Abstract: By thermal oxidation a field oxide layer is formed that lines first and second trenches that extend from a main surface into a semiconductor layer. After the thermal oxidation, field electrodes and trench gate electrodes of power transistor cells are formed in the first and second trenches. A protection cover including a silicon nitride layer is formed that covers a cell area with the first and second trenches. With the protection cover covering the cell area, planar gate electrodes of lateral transistors are formed in a support area of the semiconductor layer.

Abstract translation: 通过热氧化形成场氧化物层，其形成从主表面延伸到半导体层中的第一和第二沟槽。 在热氧化之后，在第一和第二沟槽中形成功率晶体管单元的场电极和沟槽栅电极。 形成包括氮化硅层的保护盖，其覆盖具有第一和第二沟槽的单元区域。 通过覆盖单元区域的保护盖，横向晶体管的平面栅电极形成在半导体层的支撑区域中。