公开(公告)号：US20220299878A1

公开(公告)日：2022-09-22

申请号：US17832920

申请日：2022-06-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  G03F7/004 ,  C23C16/455 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20210347791A1

公开(公告)日：2021-11-11

申请号：US17380475

申请日：2021-07-20

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Stephen T. Meyers ,  Kai Jiang ,  William Earley ,  Jeremy T. Anderson

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/32 ,  G03F7/20

Abstract: Organotin clusters are described with the formula R3Sn3(O2CR′)5−x(OH)2+x(μ3-O) with 0≤x

公开(公告)号：US20210026241A1

公开(公告)日：2021-01-28

申请号：US16934647

申请日：2020-07-21

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  William Earley ,  Truman Wambach

IPC: G03F7/004 ,  C07F7/22 ,  G03F7/16 ,  G03F7/32 ,  G03F7/20

Abstract: Patterning with UV and EUV light is described with organo tin sulfide (and selenide) clusters. The clusters are solids at room temperature and are soluble in organic solvents that are not too polar. Irradiation can either fragment a carbon metal bond or crosslink unsaturated organic moieties to stabilize the irradiated material. The irradiated material then resists dissolving in organic solvents so that the un-irradiated material can be contacted with an organic solvent to develop the latent image formed with the radiation. Radiation patternable layers can be formed through coating a solution or through vapor deposition. Corresponding precursor solutions, structures and methods are described.

公开(公告)号：US10775696B2

公开(公告)日：2020-09-15

申请号：US16238779

申请日：2019-01-03

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/004 ,  G03F7/16 ,  C23C14/08 ,  C23C16/40 ,  G03F7/38 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20200064733A1

公开(公告)日：2020-02-27

申请号：US16674714

申请日：2019-11-05

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/20

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US20190308998A1

公开(公告)日：2019-10-10

申请号：US16375032

申请日：2019-04-04

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  William Earley ,  Stephen T. Meyers ,  Kai Jiang ,  Jeremy T. Anderson

IPC: C07F7/22 ,  G03F7/004

Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.

公开(公告)号：US20180046086A1

公开(公告)日：2018-02-15

申请号：US15674934

申请日：2017-08-11

Applicant: Inpria Corporation

Inventor： Mollie Waller ,  Brian J. Cardineau ,  Kai Jiang ,  Alan J. Telecky ,  Stephen T. Meyers ,  Benjamin L. Clark

IPC: G03F7/42 ,  H01L21/67 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/004

CPC classification number: G03F7/422 ,  G03F7/0042 ,  G03F7/162 ,  G03F7/168 ,  H01L21/02087 ,  H01L21/0273 ,  H01L21/67051

Abstract: Methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

公开(公告)号：US20170102612A1

公开(公告)日：2017-04-13

申请号：US15291738

申请日：2016-10-12

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph Burton Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/004 ,  C09D7/12 ,  G03F7/40 ,  G03F7/32 ,  G03F7/20 ,  G03F7/16

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/325 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US12276913B2

公开(公告)日：2025-04-15

申请号：US17858172

申请日：2022-07-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  C23C14/08 ,  C23C16/40 ,  C23C16/455 ,  G03F7/004 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20250011346A1

公开(公告)日：2025-01-09

申请号：US18895654

申请日：2024-09-25

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Stephen T. Meyers ,  Kai Jiang ,  William Earley ,  Jeremy T. Anderson

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: Organotin clusters are described with the formula R3Sn3(O2CR′)5−x(OH)2+x(μ3-O) with 0≤x