公开(公告)号：US4260665A

公开(公告)日：1981-04-07

申请号：US946194

申请日：1978-09-27

申请人： Toshiyuki Aida ,  Sadanori Taguchi ,  Isamu Yuito ,  Ushio Kawabe ,  Shigehiko Yamamoto ,  Yukio Honda ,  Norio Shibata ,  Hiroshi Okano

发明人： Toshiyuki Aida ,  Sadanori Taguchi ,  Isamu Yuito ,  Ushio Kawabe ,  Shigehiko Yamamoto ,  Yukio Honda ,  Norio Shibata ,  Hiroshi Okano

IPC分类号： H01J1/26 ,  H01J1/14 ,  H01J1/15 ,  H01J9/04

CPC分类号： H01J9/04 ,  H01J1/14 ,  Y10T428/12028 ,  Y10T428/12618 ,  Y10T428/12875 ,  Y10T428/12944

摘要： An electron tube cathode in such a structure comprising a Ni-W-Zr alloy (W content: 20-28 wt. %) having a grain size of 4-10 .mu.m as a base metal, a 1,000-2,000 A-thick Pt film provided on the surface of the base metal, and an electron emitting material layer consisting of alkaline earth metal oxide provided on the Pt film has less emission lowering and less peeling of the electron emitting material layer, even if placed in a long time service. The electron tube cathode can be produced according to a method comprising (i) a step of annealing a base metal of Ni-W-Zr alloy (W content: 20-28 wt. %) at 1,000.degree.-1,200.degree. C., (ii) a step of providing a 1,000-2,000 A thick Pt film on the surface of the base metal, and (iii) a step of providing an electron emitting material layer consisting of alkaline earth metal oxide on the Pt film.

摘要翻译： 这种结构中的电子管阴极，其特征在于：以贱金属为基准的粒径为4-10μm的Ni-W-Zr合金（W含量：20〜28重量％），1000〜 并且由于设置在Pt膜上的由碱土类金属氧化物构成的电子发射材料层即使放置在长时间的服务中也具有较少的发射降低和较少的电子发射材料层的剥离。 电子管阴极可以根据以下方法制造：（i）在1000-1200℃下退火Ni-W-Zr合金的母材（W含量：20-28重量％）的步骤，（ ii）在母材表面上提供1,000-2,000A厚的Pt膜的步骤，和（iii）在Pt膜上提供由碱土金属氧化物构成的电子发射材料层的步骤。

公开(公告)号：US5701221A

公开(公告)日：1997-12-23

申请号：US416653

申请日：1995-04-05

申请人： Akira Taniyama ,  Makoto Morijiri ,  Haruko Tanaka ,  Isamu Yuito ,  Eiji Ashida ,  Hiroaki Koyanagi ,  Hideo Tanabe ,  Tetsuo Kobayashi

发明人： Akira Taniyama ,  Makoto Morijiri ,  Haruko Tanaka ,  Isamu Yuito ,  Eiji Ashida ,  Hiroaki Koyanagi ,  Hideo Tanabe ,  Tetsuo Kobayashi

IPC分类号： G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3906 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932

摘要： A magnetic domain controlling film for controlling the magnetic domain of a magnetoresistive film is formed by a patterning technique on a lower insulating film formed on a lower shield film. The magnetoresistive film is formed on the magnetic domain controlling film for converting a magnetic signal from a magnetic recording medium into an electrical signal using the magnetoresistive effect. A resist pattern is formed by the lift-off method on the magnetoresistive film in such a fashion as to leave a region of the magnetoresistive film corresponding to the tracks of the magnetic recording medium. A magnetoresistive element is formed by ion milling leaving only the portion of the magnetoresistive film corresponding to the tracks. An insulating layer is formed on the resist pattern, on the upper surface region of the lower insulating film other than the portion thereof right under the magnetic domain controlling film reduced in thickness by ion milling, and on the upper surface region of the magnetic domain controlling film other than the portion thereof right under the magnetoresistive film. An electrode film is formed on the insulating layer, after which the resist pattern is removed. The insulating layer is contiguously deposited on the upper surface region formed in a thin layer of the lower insulating film and on a part of the upper surface region formed in a thin layer of the magnetic domain controlling film.

摘要翻译： 用于控制磁阻膜的磁畴的磁畴控制膜通过在下屏蔽膜上形成的下绝缘膜上的图案化技术形成。 磁阻膜形成在磁畴控制膜上，用于使用磁阻效应将来自磁记录介质的磁信号转换成电信号。 通过剥离方法在磁阻膜上形成抗蚀剂图案，以便留下与磁记录介质的轨道相对应的磁阻膜的区域。 通过离子铣削形成磁阻元件，仅留下对应于轨道的磁阻膜的部分。 绝缘层形成在抗蚀剂图案上，除了通过离子研磨在厚度减小的磁畴控制膜的正下方的部分的下部绝缘膜的上表面区域上形成绝缘层，并且在磁畴控制的上表面区域 膜之外的其它部分即刻在磁阻膜的正下方。 在绝缘层上形成电极膜，然后除去抗蚀剂图案。 绝缘层连续沉积在形成在下绝缘膜的薄层中的上表面区域和形成在磁畴控制膜的薄层中的上表面区域的一部分上。

公开(公告)号：US06937445B2

公开(公告)日：2005-08-30

申请号：US10368572

申请日：2003-02-20

申请人： Isamu Yuito ,  Kiyoshi Akamatsu

发明人： Isamu Yuito ,  Kiyoshi Akamatsu

IPC分类号： G11B5/31 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/313 ,  G11B5/3136 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996

摘要： An area in which an insulating film is formed over a substrate of a recording/reproducing separated type head is limited to the vicinity of a GMR film. This enables heat of Joule heating by a coil to be guided to the substrate without being obstructed by the insulating film. Electrodes, an upper shield film, a lower shield and a lower pole that are formed in-between are metallic thin films of high thermal conductivity, and accordingly have little influence. Similarly, gap films and a separation film that are positioned in-between, though they are electrically insulating films made of A12O3, have no great influence because of their thinness. According to the invention, a rise of the head's own temperature is restrained by efficiently radiating heat generated by the head itself to the substrate. As a result, it is thereby made possible to provide a highly reliable recording/reproducing separated type head whose deformation quantity is smaller and which can avoid coming into contact with a recording medium.

摘要翻译： 在记录/再现分离型磁头的基板上形成绝缘膜的区域被限制在GMR膜附近。 这使得线圈的焦耳加热热能被引导到衬底而不被绝缘膜阻碍。 形成在其间的电极，上屏蔽膜，下屏蔽和下极是导热性高的金属薄膜，因此影响很小。 类似地，间隙膜和分离膜位于它们之间，尽管它们是由Al 2 O 3 3 3 3制成的电绝缘膜，但由于它们的薄度而没有很大的影响 。 根据本发明，通过有效地将头部本身产生的热量有效地辐射到衬底来抑制头部自身温度的上升。 结果，由此可以提供变形量更小并且可以避免与记录介质接触的高度可靠的记录/再现分离型头。

公开(公告)号：US5287237A

公开(公告)日：1994-02-15

申请号：US668069

申请日：1991-03-12

申请人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Ryoichi Nakatani ,  Isamu Yuito ,  Naoki Koyama

发明人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Ryoichi Nakatani ,  Isamu Yuito ,  Naoki Koyama

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/30 ,  B32B15/00 ,  G11B5/147

CPC分类号： B82Y25/00 ,  G01R33/09 ,  G11B5/3113 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/002 ,  H01F10/3218 ,  H01L43/08 ,  G11B5/3163 ,  Y10T428/1107 ,  Y10T428/12861

摘要： In order to prevent generation of Barkhausen noise of a magnetoresistance-effect element, a thin antiferromagnetic film formed of Fe-Mn-X alloy containing a third alloying element X (which serves to improve corrosion resistance of Fe-Mn alloy) by 0.1 to 20 atomic % is disposed in adjacent to a thin permalloy film. The element X is selected from the group consisting of Ir, Ru, Zr, Nb, Si, Ge, V, Co, Pt and Pd. It is particularly recommended to employ Ir of 4 to 15 atomic % or Ru of 5.5 to 15 atomic % as the element X. When one or more alloying element selected from Ru, Rh, Pt, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge is added to Fe and Mn which are essential components of the Fe-Mn-X alloy in addition to the element X, corrosion resistance of the alloy is improved more sufficiently.

摘要翻译： 为了防止产生具有磁阻效应元件的巴克豪森噪声，由含有第三合金元素X（用于提高Fe-Mn合金的耐腐蚀性）的Fe-Mn-X合金形成的薄的反铁磁性膜为0.1〜20 原子％设置在薄坡坡合金膜附近。 元素X选自Ir，Ru，Zr，Nb，Si，Ge，V，Co，Pt和Pd。 特别推荐使用4〜15原子％的Ir或5.5〜15原子％的Ru作为元素X.当选自Ru，Rh，Pt，Ti，Zr，Hf，V，Nb中的一种或多种合金元素时， 除了元素X之外，还添加了作为Fe-Mn-X合金的必要成分的Fe和Mn中的Ta，Cr，Mo，W，Ni，Cu，Al，Si和Ge，合金的耐腐蚀性提高 充分地。

公开(公告)号：US5212609A

公开(公告)日：1993-05-18

申请号：US792630

申请日：1991-11-15

申请人： Isamu Yuito ,  Makoto Morijiri ,  Tooru Takeura ,  Naoki Koyama ,  Masahiro Kitada

发明人： Isamu Yuito ,  Makoto Morijiri ,  Tooru Takeura ,  Naoki Koyama ,  Masahiro Kitada

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  Y10T29/49052

摘要： A magnetoresistive head is disclosed. It comprises a lower gap film, a magnetoresistive film, a bias film, an electrode, an upper gap film, and upper shield film provided in sequence on a substrate. A protective film is provided under the upper shield film to prevent the upper gap film and electrode from the undesirable etching during patterning the upper shield film.

摘要翻译： 公开了一种磁阻头。 它包括依次设置在基板上的下间隙膜，磁阻膜，偏置膜，电极，上间隙膜和上屏蔽膜。 在上屏蔽膜下方设置有保护膜，以防止在上屏蔽膜图案化期间上间隙膜和电极不期望的蚀刻。

公开(公告)号：US4291252A

公开(公告)日：1981-09-22

申请号：US95933

申请日：1979-11-20

申请人： Toshiyuki Aida ,  Shigehiko Yamamoto ,  Sadanori Taguchi ,  Isamu Yuito ,  Yukio Honda ,  Ushio Kawabe ,  Akira Misumi ,  Takao Kawamura ,  Hiroshi Fukushima ,  Yoshio Degawa

发明人： Toshiyuki Aida ,  Shigehiko Yamamoto ,  Sadanori Taguchi ,  Isamu Yuito ,  Yukio Honda ,  Ushio Kawabe ,  Akira Misumi ,  Takao Kawamura ,  Hiroshi Fukushima ,  Yoshio Degawa

IPC分类号： H01J1/14 ,  H01J19/06 ,  H01K1/04

CPC分类号： H01J1/14

摘要： An electron tube cathode has a composite suppression layer structure interposed between the base metal and the electron-emitting material to suppress an interface layer formed through the reaction of the base metal with the electron emissive material. The composite layer structure includes a thin layer of Pt or Re and a layer of oxide of Zr and/or Hf. As a result, the formation of the interface layer is prevented so that the useful life of the electron tube cathode is prolonged.

摘要翻译： 电子管阴极具有插入在基底金属和电子发射材料之间的复合抑制层结构，以抑制通过贱金属与电子发射材料的反应形成的界面层。 复合层结构包括Pt或Re的薄层和Zr和/或Hf的氧化物层。 结果，防止了界面层的形成，延长了电子管阴极的使用寿命。