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    Magnetoresistive thin-film magnetic head and method of fabrication thereof
    2.
    发明授权
    Magnetoresistive thin-film magnetic head and method of fabrication thereof 失效
    磁阻薄膜磁头及其制造方法

    公开(公告)号：US5701221A

    公开(公告)日：1997-12-23

    申请号：US416653

    申请日：1995-04-05

    申请人： Akira Taniyama ,  Makoto Morijiri ,  Haruko Tanaka ,  Isamu Yuito ,  Eiji Ashida ,  Hiroaki Koyanagi ,  Hideo Tanabe ,  Tetsuo Kobayashi

    发明人： Akira Taniyama ,  Makoto Morijiri ,  Haruko Tanaka ,  Isamu Yuito ,  Eiji Ashida ,  Hiroaki Koyanagi ,  Hideo Tanabe ,  Tetsuo Kobayashi

    IPC分类号： G11B5/31 ,  G11B5/39

    CPC分类号： G11B5/3906 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932

    摘要： A magnetic domain controlling film for controlling the magnetic domain of a magnetoresistive film is formed by a patterning technique on a lower insulating film formed on a lower shield film. The magnetoresistive film is formed on the magnetic domain controlling film for converting a magnetic signal from a magnetic recording medium into an electrical signal using the magnetoresistive effect. A resist pattern is formed by the lift-off method on the magnetoresistive film in such a fashion as to leave a region of the magnetoresistive film corresponding to the tracks of the magnetic recording medium. A magnetoresistive element is formed by ion milling leaving only the portion of the magnetoresistive film corresponding to the tracks. An insulating layer is formed on the resist pattern, on the upper surface region of the lower insulating film other than the portion thereof right under the magnetic domain controlling film reduced in thickness by ion milling, and on the upper surface region of the magnetic domain controlling film other than the portion thereof right under the magnetoresistive film. An electrode film is formed on the insulating layer, after which the resist pattern is removed. The insulating layer is contiguously deposited on the upper surface region formed in a thin layer of the lower insulating film and on a part of the upper surface region formed in a thin layer of the magnetic domain controlling film.

    摘要翻译： 用于控制磁阻膜的磁畴的磁畴控制膜通过在下屏蔽膜上形成的下绝缘膜上的图案化技术形成。 磁阻膜形成在磁畴控制膜上，用于使用磁阻效应将来自磁记录介质的磁信号转换成电信号。 通过剥离方法在磁阻膜上形成抗蚀剂图案，以便留下与磁记录介质的轨道相对应的磁阻膜的区域。 通过离子铣削形成磁阻元件，仅留下对应于轨道的磁阻膜的部分。 绝缘层形成在抗蚀剂图案上，除了通过离子研磨在厚度减小的磁畴控制膜的正下方的部分的下部绝缘膜的上表面区域上形成绝缘层，并且在磁畴控制的上表面区域 膜之外的其它部分即刻在磁阻膜的正下方。 在绝缘层上形成电极膜，然后除去抗蚀剂图案。 绝缘层连续沉积在形成在下绝缘膜的薄层中的上表面区域和形成在磁畴控制膜的薄层中的上表面区域的一部分上。

    Spin-valve giant magnetoresistive head and method of manufacturing the same
    3.
    发明授权
    Spin-valve giant magnetoresistive head and method of manufacturing the same 失效
    旋转阀巨磁阻头及其制造方法

    公开(公告)号：US06717778B2

    公开(公告)日：2004-04-06

    申请号：US09931255

    申请日：2001-08-17

    申请人： Masatoshi Arasawa ,  Haruko Tanaka ,  Makoto Morijiri ,  Koichi Nishioka ,  Shuichi Kojima ,  Masayasu Kagawa

    发明人： Masatoshi Arasawa ,  Haruko Tanaka ,  Makoto Morijiri ,  Koichi Nishioka ,  Shuichi Kojima ,  Masayasu Kagawa

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle &thgr; which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.

    摘要翻译： 通过在下绝缘间隙层上层叠反铁磁层，钉扎磁性层，非磁性导电层，自由磁性层和非磁性保护层，形成梯形截面形状的多个自旋阀GMR传感器薄膜。 在将自旋阀巨磁阻层图案化成自旋阀GMR传感器的多个薄膜的过程中产生的下绝缘间隙层的蚀刻量为10nm以下。 此外，相对于自由磁性层的中间线，多个薄膜的每个侧面的切线与自由磁性层的中间线在其厚度方向上形成的角度θ成为45度以上。 这种结构使得可以提供这样的自旋阀巨磁阻头，其满足确保恒定击穿电压的要求并防止MR输出电压波形的不稳定性。

    Method of manufacturing a magnetic head
    5.
    发明授权
    Method of manufacturing a magnetic head 失效
    制造磁头的方法

    公开(公告)号：US07605006B2

    公开(公告)日：2009-10-20

    申请号：US11331426

    申请日：2006-01-11

    申请人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

    发明人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

    IPC分类号： G11B5/39 ,  H01L21/312 ,  H01L21/00 ,  G11B5/33

    CPC分类号： G11B5/3163 ,  G11B5/398

    摘要： In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is reduced to 45° or less. It is necessary to provide a lift-off resist pattern that forms the end of the GMR film to be at an angle of as abrupt as 45° or more and ensures lift-off. According to one embodiment of the invention, a method of manufacturing a thin film magnetic head of using a resist pattern comprises three-layered organic films of a PMGI layer, an organic film layer and an image layer from the lower layer as a lift-off resist pattern, etching the organic film layer and the PMGI layer by using the imaging layer as a mask, then etching a GMR layer by using, as a mask, a lift-off resist pattern in which the organic film layer and the imaging layer are formed into the overhang shape prepared by etching the PMGI layer in a developer solution, and then forming a magnetic domain control film and an electrode film on both ends of the GMR layer by using a lift-off method.

    摘要翻译： 在形成窄图案时，难以形成具有突出形状的剥离抗蚀剂图案。 因此，导致GMR层的端部的角度降低到45°以下的现象。 需要提供形成GMR膜的端部的剥离抗蚀剂图形，其形成为突然为45°以上的角度并确保剥离。 根据本发明的一个实施例，制造使用抗蚀剂图案的薄膜磁头的方法包括作为剥离的PMGI层，有机膜层和来自下层的图像层的三层有机膜 通过使用成像层作为掩模蚀刻有机膜层和PMGI层，然后通过使用有机膜层和成像层的剥离抗蚀剂图案作为掩模蚀刻GMR层， 形成为通过在显影剂溶液中蚀刻PMGI层制备的突出形状，然后通过剥离法在GMR层的两端上形成磁畴控制膜和电极膜。

    Method of manufacturing a magnetic head
    7.
    发明申请
    Method of manufacturing a magnetic head 失效

    公开(公告)号：US20060172532A1

    公开(公告)日：2006-08-03

    申请号：US11331426

    申请日：2006-01-11

    申请人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

    发明人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

    IPC分类号： H01L21/44

    CPC分类号： G11B5/3163 ,  G11B5/398

    摘要： In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is reduced to 45° or less. It is necessary to provide a lift-off resist pattern that forms the end of the GMR film to be at an angle of as abrupt as 45° or more and ensures lift-off. According to one embodiment of the invention, a method of manufacturing a thin film magnetic head of using a resist pattern comprises three-layered organic films of a PMGI layer, an organic film layer and an image layer from the lower layer as a lift-off resist pattern, etching the organic film layer and the PMGI layer by using the imaging layer as a mask, then etching a GMR layer by using, as a mask, a lift-off resist pattern in which the organic film layer and the imaging layer are formed into the overhang shape prepared by etching the PMGI layer in a developer solution, and then forming a magnetic domain control film and an electrode film on both ends of the GMR layer by using a lift-off method.

    Group III nitride crystal and method of its growth
    8.
    发明授权
    Group III nitride crystal and method of its growth 有权
    III族氮化物晶体及其生长方法

    公开(公告)号：US07892513B2

    公开(公告)日：2011-02-22

    申请号：US12359342

    申请日：2009-01-26

    申请人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

    发明人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

    IPC分类号： C01B21/06

    CPC分类号： C30B29/403 ,  C30B9/06 ,  C30B19/04 ,  C30B29/406

    摘要： Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.

    摘要翻译： 提供III族氮化物晶体生长方法，使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法：制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体，并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含有III族金属的溶剂中的溶液与基板的主面接触的步骤，将III族氮化物晶体生长到主面上。

    Method for Growing Group III Nitride Crystal
    9.
    发明申请
    Method for Growing Group III Nitride Crystal 审中-公开
    生长III族氮化物晶体的方法

    公开(公告)号：US20100229786A1

    公开(公告)日：2010-09-16

    申请号：US12681624

    申请日：2008-09-19

    申请人： Koji Uematsu ,  Hiroaki Yoshida ,  Ryu Hirota ,  Shinsuke Fujiwara ,  Haruko Tanaka

    发明人： Koji Uematsu ,  Hiroaki Yoshida ,  Ryu Hirota ,  Shinsuke Fujiwara ,  Haruko Tanaka

    IPC分类号： C30B19/12

    CPC分类号： C30B29/403 ,  C30B19/04

    摘要： A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal (10) by a liquid-phase technique, and is provided with: a step of preparing a III-nitride crystal substrate (1) having the same chemical composition as the III-nitride crystal (10), and having a thickness of not less than 0.5 mm; and a step of contacting onto a major surface (1m) of the III-nitride crystal substrate (1) a solution in which a nitrogen-containing gas (5) is dissolved in a solvent (3) that includes a Group-III metal, to grow III-nitride crystal (10) onto the major surface (1m).

    摘要翻译： 可以获得能够在液相技术下生长大规模晶体的III族氮化物晶体生长方法。 本III-氮化物晶体生长方法是通过液相技术生长III族氮化物晶体（10）的方法，并且具有：制备具有相同化学组成的III族氮化物晶体衬底（1）的步骤 作为III族氮化物晶体（10），并且具有不小于0.5mm的厚度; 以及将含氮气体（5）溶解在包含III族金属的溶剂（3）中的溶液与III族氮化物晶体基板（1）的主表面（1m）接触的步骤， 以将III族氮化物晶体（10）生长到主表面（1m）上。

    GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH
    10.
    发明申请
    GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH 有权
    第III组氮化物晶体及其生长方法

    公开(公告)号：US20100189624A1

    公开(公告)日：2010-07-29

    申请号：US12359342

    申请日：2009-01-26

    申请人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

    发明人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

    IPC分类号： C30B17/00 ,  C01B21/06

    CPC分类号： C30B29/403 ,  C30B9/06 ,  C30B19/04 ,  C30B29/406

    摘要： Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.

    摘要翻译： 提供III族氮化物晶体生长方法，使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法：制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体，并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含III族金属的溶剂中的溶液与基板的主面接触的步骤，将III族氮化物晶体生长到主面上。