摘要:
Disclosed is a method of manufacturing a semiconductor device. A floating gate is formed and a nitrification process is then implemented. With the disclosed process, it is possible to improve the roughness of the top surface of the floating gate electrode. Furthermore, a nitrification process and a dielectric film formation process are implemented in-situ, which simplifies the manufacturing process.
摘要:
A touch-based mobile device and a method for performing a touch lock function of the mobile device are provided. In the method, the device displays a touch lock screen in which a cover layer is superimposed over a specific underlying screen and allows the underlying screen to be visible. When an input of a touch moving gesture is detected, the device moves the cover layer depending on the touch moving gesture, and determines whether a distance of the touch moving gesture reaches a predefined critical distance. If so, the device removes the cover layer from the touch lock screen and switches the touch lock state to a touch unlock state, thus allowing a user to more conveniently switch the touch lock state to the touch unlock state.
摘要:
A method for manufacturing a memory device having a vertical structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for depositing a first silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and the step for laminating the sacrificial layer includes a step for depositing a second silicon oxide film by supplying dichlorosilane (SiCl2H2) to the substrate.
摘要翻译:根据本发明的一个实施例的用于制造具有垂直结构的存储器件的方法包括:在衬底上交替层叠一个或多个绝缘层和一个或多个牺牲层的步骤; 形成用于穿透绝缘层和牺牲层的穿透孔的步骤; 形成填充贯通孔的图案的工序; 用于形成用于穿透绝缘层和牺牲层的开口的步骤; 以及通过向所述开口供给蚀刻剂来除去所述牺牲层的步骤,其中所述层叠所述绝缘层的步骤包括通过向所述基板供给至少一种选自SiH 4的气体来沉积第一氧化硅膜的步骤 Si 2 H 6,Si 3 H 8,Si 4 H 10,层叠牺牲层的步骤包括通过向衬底提供二氯硅烷(SiCl 2 H 2)而沉积第二氧化硅膜的步骤。
摘要:
A music composition method and system is provided for composing a music piece using a touch interaction with a touchscreen-enabled portable device. A music composition method includes setting an accompaniment with chords varying according to the progress of a unit play time; playing the accompaniment; displaying, when a series of touches are detected, a trace of the touches; playing a melody of tones mapped to positions of the touches and matching notes of a note scale defined by chords of the accompaniment playing at the times when the touches are detected; and saving the trace, melody, and accompaniment as a music piece as an ensemble.
摘要:
A music composition method and system is provided for composing a music piece using a touch interaction with a touchscreen-enabled portable device. A music composition method includes setting an accompaniment with chords varying according to the progress of a unit play time; playing the accompaniment; displaying, when a series of touches are detected, a trace of the touches; playing a melody of tones mapped to positions of the touches and matching notes of a note scale defined by chords of the accompaniment playing at the times when the touches are detected; and saving the trace, melody, and accompaniment as a music piece as an ensemble.
摘要:
A method, apparatus, and system are described in which an electronic device includes a display means having an output area and an execution area. An electronic device user may simply and intuitively play a multimedia item through manipulation of objects in the output area and the execution area. The multimedia item playing system may includes an output area to display an object corresponding to a multimedia item, and an execution area to receive the object moved from the output area and to play the multimedia item in response to the receiving.
摘要:
The present invention relates to an input device and method of a portable terminal. The present invention includes generating an input event by a first input mode, generating a second input event by a motion of the portable terminal simultaneously or consecutively with the input event, and controlling operation of an application program according to the user function of the portable terminal in consideration of the first and second input events.
摘要:
A short-range communication device and mobile terminal, and a control method and system for the same are disclosed. The control method enables the user to control the mobile terminal through the short-range communication device having motion sensing capability. Hence, the user can conveniently control the operation of the mobile terminal through the short-range communication device.
摘要:
The present invention relates to a portable terminal and method of displaying a content list using the same. A content list may be classified into groups according to a classification criterion corresponding to an arrangement method selected by a user. The classified groups may be displayed to be visually distinguishable. A first group belonging to the classified groups may be displayed with a background in a first color. The background of a second group may be displayed in a second color different from the first color, and a background of a third group may be displayed in the first color. Accordingly, a user can easily recognize that attribute information associated with the content has changed.
摘要:
Provided is a method of manufacturing a flash memory device. In the method, after forming a cell string and source/drain selection transistors, it forms a first oxide film in which a sidewall oxide film and a buffering oxide film are stacked, a nitride film, and a second oxide film for spacer on the overall structure. Then, source/drain contact holes are formed. Thus, the source/drain selection transistors are prevented from being exposed while etching the source/drain contact holes, which enhances the reliability of the flash memory device.