Tunable Fabry-Perot interferometer and X-ray display device having such
an interferometer
    31.
    发明授权
    Tunable Fabry-Perot interferometer and X-ray display device having such an interferometer 失效
    具有这种干涉仪的可调式法布里 - 珀罗干涉仪和X射线显示装置

    公开(公告)号:US4547801A

    公开(公告)日:1985-10-15

    申请号:US468233

    申请日:1983-02-22

    CPC分类号: G01J3/26 G21K4/00

    摘要: In a tunable Fabry-Perot interferometer, the supports for two parallel mirrors consist of bundles of optical fibers with the mirrors being provided on the ends of the fibers. This structure may be used advantageously in an X-ray display device wherein the structure is located between the display screen on which the visible X-ray image is displayed and a television camera tube. By using the Fabry-Perot interferometer as a light attenuator in such a device, problems where the camera tube is overridden when making an X-ray record can be prevented by causing the reflection coefficient of the mirrors in the visible range of the spectrum to be 99% or more. Also, the half width of the transmission wavelength pass-band of the Fabry-Perot interferometer can be made less than 50 nm.

    摘要翻译: 在可调谐的法布里 - 珀罗干涉仪中,用于两个平行镜的支撑件由光纤束组成,其中镜子设置在光纤的端部上。 该结构可以有利地用于X射线显示装置,其中该结构位于显示可见X射线图像的显示屏和电视摄像机管之间。 通过在这种装置中使用法布里 - 珀罗干涉仪作为光衰减器,可以通过使光谱的可见光范围内的反射镜的反射系数成为可以防止在进行X射线记录时相机管被覆盖的问题 99%以上。 此外,法布里 - 珀罗干涉仪的透射波长通带的半值宽度可以小于50nm。

    Magnetic domain device
    33.
    发明授权
    Magnetic domain device 失效
    磁畴装置

    公开(公告)号:US4236226A

    公开(公告)日:1980-11-25

    申请号:US15981

    申请日:1979-02-26

    IPC分类号: G11C11/14 G11C19/08 H01F10/06

    CPC分类号: H01F10/06 G11C19/08

    摘要: A magnetic device comprising at least one thin domain layer of a magnetizable material which has an easy axis of magnetization which is substantially normal to the surface of the layer and in which magnetic domains are propagated under the influence of a bipolar current, for example an alternating current, by a pattern of electrically conductive material with which the layer is provided. Elements are furthermore present which cause an asymmetry force and thus determine the direction in which the domains are propagated. The electrically conductive material and the elements are present in a single pattern which is constructed from at least a layer of magnetic material.

    摘要翻译: 一种磁性器件,包括至少一个可磁化材料的薄畴层,其具有容易的磁化轴,其基本上垂直于该层的表面,并且其中磁畴在双极性电流的影响下传播,例如交替 电流,通过提供该层的导电材料的图案。 此外存在引起不对称力并因此确定域传播方向的元件。 导电材料和元件以至少一层磁性材料构成的单一图案存在。

    Magnetic bubble multilayer arrangement
    34.
    发明授权
    Magnetic bubble multilayer arrangement 失效
    磁性气泡多层布置

    公开(公告)号:US4151602A

    公开(公告)日:1979-04-24

    申请号:US878822

    申请日:1978-02-17

    IPC分类号: G11C19/08

    CPC分类号: G11C19/0833

    摘要: A magnetic bubble device comprising a non-magnetic substrate layer, and a sequence of magnetic layers joined to each other and to the magnetic substrate layer, e.g. by epitaxial growing of crystalline layers, whereby at least two of the magnetic layers may accommodate magnetic bubbles which are stably joined through an interlayer magnetic compensation wall, or by an essentially finite potential barrier.

    摘要翻译: 一种磁性气泡装置,包括非磁性基底层,以及彼此连接的磁性层和磁性基底层的一系列磁性层。 通过晶体层的外延生长,由此至少两个磁性层可以适应通过层间磁补偿壁稳定地接合或通过基本上有限的势垒的磁气泡。

    Method of fabricating a semiconductor device having a top layer and base
layer joined by wafer bonding
    36.
    发明授权
    Method of fabricating a semiconductor device having a top layer and base layer joined by wafer bonding 失效
    制造具有通过晶片接合连接的顶层和底层的半导体器件的方法

    公开(公告)号:US5688714A

    公开(公告)日:1997-11-18

    申请号:US612201

    申请日:1996-03-07

    摘要: A method is set forth of manufacturing a silicon body (5) having an n-type top layer (1') and an adjoining, more highly doped n-type base layer (2'), by which a first, n-type silicon slice (1) and a second, more highly doped n-type silicon slice (2) are put one on the other and then bonded together by heating. To obtain a low contact resistance between top layer (1') and base layer (2'), a boundary layer having a higher doping than the to player (1') is provided in the top layer (1') adjoining the base layer (2'). According to the invention, the boundary layer is formed by diffusion of an n-type dopant (11, 14) into the first slice (1) from the second slice (2) during heating. The concentration of the n-type dopant (11, 14) is taken to be so high in this case that boron (12) present as an impurity is overdoped, so that undesired pn transitions cannot occur. Measures according to the invention present the advantage that pollution of the first slice (1) is counteracted, while in addition the boundary layer is given a steep concentration profile. Semiconductor devices manufactured in body (5) will as a result have a comparatively high switching speed and a comparatively low forward bias.

    摘要翻译: 提出了制造具有n型顶层(1')和邻接的更高掺杂的n型基极层(2')的硅体(5)的方法,通过该方法,第一n型硅 将切片(1)和第二更高掺杂的n型硅片(2)放在一起,然后通过加热结合在一起。 为了获得顶层(1')和基底层(2')之间的低接触电阻,在与基底层(1')相邻的顶层(1')中提供具有比玩家(1')更高掺杂的边界层 (2')。 根据本发明,通过在加热期间从第二切片(2)将n型掺杂剂(11,14)扩散到第一切片(1)中形成边界层。 在这种情况下,n型掺杂剂(11,14)的浓度被认为是非常高的,因为作为杂质存在的硼(12)被过度掺杂,从而不会发生不期望的pn转变。 根据本发明的措施具有抵消第一切片(1)的污染的优点,另外边界层被赋予陡峭的浓度分布。 结果,在本体(5)中制造的半导体器件具有较高的开关速度和较低的正向偏压。

    Optical multiplexer and demultiplexer
    38.
    发明授权
    Optical multiplexer and demultiplexer 失效
    光复用器和解复用器

    公开(公告)号:US4741588A

    公开(公告)日:1988-05-03

    申请号:US411927

    申请日:1982-08-26

    摘要: In optical multiplexers and demultiplexers which utilize interference filters and optical gratings losses and noise are reduced by converting the unpolarized light into linearly polarized light. This improves the efficiency of the filters and gratings and suppresses noise which is caused by fluctuations in the degree of polarization of unpolarized light because filters and gratings have different characteristics for the different polarization directions.

    摘要翻译: 在利用干涉滤光器和光栅的光复用器和解复用器中,通过将非偏振光转换为线偏振光来减少损耗和噪声。 这提高了滤光器和光栅的效率,并且抑制由非偏振光的偏振度的波动引起的噪声,因为滤光器和光栅对于不同的偏振方向具有不同的特性。

    Method of manufacturing a layer of an oxide of an element from group IVa
    40.
    发明授权
    Method of manufacturing a layer of an oxide of an element from group IVa 失效
    从组IVa制造元素氧化物层的方法

    公开(公告)号:US4617206A

    公开(公告)日:1986-10-14

    申请号:US645884

    申请日:1984-08-30

    IPC分类号: C03C17/25 B05D3/02

    摘要: Providing a transparent layer of an oxide of an element from group IVa of the Periodic Table, notably TiO.sub.2, by providing a substrate with a solution of a compound of the element which upon heating is converted into the relevant oxide, drying the film and heating the dried film so as to form the transparent layer of the oxide. The oxide thus obtained is a form having a comparatively low refractive index. By heating the product, after providing the film, rapidly to a temperature of above 700.degree. C., preferably above 1,000.degree. C., keeping it at this temperature for some time and then rapidly cooling it again, a modification having a higher refractive index (for example, for TiO.sub.2 rutile) is obtained.

    摘要翻译: 通过向衬底提供元素化合物在加热时转化为相关氧化物的溶液,干燥该膜并加热该元素的元素的透明层,该元素的氧化物通过元素周期表IVa族,特别是TiO 2, 从而形成氧化物的透明层。 由此获得的氧化物是具有较低折射率的形式。 通过加热产物,在提供膜之后快速升至高于700℃,优选高于1000℃的温度,将其保持在该温度下一段时间,然后再次快速冷却,具有较高折射率的改性 (例如,用于TiO 2金红石)。