公开(公告)号：US4236226A

公开(公告)日：1980-11-25

申请号：US15981

申请日：1979-02-26

申请人： Evert H. L. J. Dekker ,  Ulrich E. Enz ,  Jan Haisma ,  Klaas L. L. Van Mierloo

发明人： Evert H. L. J. Dekker ,  Ulrich E. Enz ,  Jan Haisma ,  Klaas L. L. Van Mierloo

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F10/06

CPC分类号： H01F10/06 ,  G11C19/08

摘要： A magnetic device comprising at least one thin domain layer of a magnetizable material which has an easy axis of magnetization which is substantially normal to the surface of the layer and in which magnetic domains are propagated under the influence of a bipolar current, for example an alternating current, by a pattern of electrically conductive material with which the layer is provided. Elements are furthermore present which cause an asymmetry force and thus determine the direction in which the domains are propagated. The electrically conductive material and the elements are present in a single pattern which is constructed from at least a layer of magnetic material.

摘要翻译： 一种磁性器件，包括至少一个可磁化材料的薄畴层，其具有容易的磁化轴，其基本上垂直于该层的表面，并且其中磁畴在双极性电流的影响下传播，例如交替 电流，通过提供该层的导电材料的图案。 此外存在引起不对称力并因此确定域传播方向的元件。 导电材料和元件以至少一层磁性材料构成的单一图案存在。

公开(公告)号：US4151602A

公开(公告)日：1979-04-24

申请号：US878822

申请日：1978-02-17

申请人： Jan Haisma ,  Klaas L. L. Van Mierloo ,  Ulrich E. Enz ,  Piet F. Bongers

发明人： Jan Haisma ,  Klaas L. L. Van Mierloo ,  Ulrich E. Enz ,  Piet F. Bongers

IPC分类号： G11C19/08

CPC分类号： G11C19/0833

摘要： A magnetic bubble device comprising a non-magnetic substrate layer, and a sequence of magnetic layers joined to each other and to the magnetic substrate layer, e.g. by epitaxial growing of crystalline layers, whereby at least two of the magnetic layers may accommodate magnetic bubbles which are stably joined through an interlayer magnetic compensation wall, or by an essentially finite potential barrier.

摘要翻译： 一种磁性气泡装置，包括非磁性基底层，以及彼此连接的磁性层和磁性基底层的一系列磁性层。 通过晶体层的外延生长，由此至少两个磁性层可以适应通过层间磁补偿壁稳定地接合或通过基本上有限的势垒的磁气泡。

公开(公告)号：US4218762A

公开(公告)日：1980-08-19

申请号：US919466

申请日：1978-06-27

申请人： Jan Haisma ,  Klaas L. L. Van Mierloo

发明人： Jan Haisma ,  Klaas L. L. Van Mierloo

IPC分类号： G11C11/14 ,  G11C13/06 ,  G11C19/08 ,  H03K3/45 ,  G11C11/15

CPC分类号： G11C19/0858 ,  G11C11/14 ,  G11C13/06 ,  G11C19/08 ,  G11C19/0816 ,  G11C19/0833 ,  G11C19/0841 ,  G11C19/0866 ,  H03K3/455

摘要： A device for storing digital information in the form of magnetic domains including at least two ferrimagnetic layers on a substrate. The ferrimagnetic layers are separated by a compensation wall and in the presence of a bias magnetic field single magnetic domains and superposed magnetic domain pairs, the superposed domains being separated by a compensation wall, are generated. All single and superposed domains are mutually repulsive. The domains within a superposed pair are attracted to each other. The generated domains are propagated to a shift register and when the reigster is filled a row of domains is coincidentally propagated, transversely out of the register, to a domain array region adjacent the register. Rows are then propagated through the array region to a second shift register where they are individually detected and annihilated. A control device assures the proper working relationship between all elements.

摘要翻译： 一种用于存储磁畴形式的数字信息的装置，包括在基片上的至少两个铁磁性层。 产生亚铁磁性层由补偿壁分离，并且在存在偏磁场单磁畴和叠加磁畴对的情况下，产生由补偿壁分隔的重叠域。 所有单个和叠加的域都相互排斥。 重叠对中的域彼此吸引。 所产生的域被传播到移位寄存器，并且当填充了该发送器时，一行域被横向地从寄存器中传播到与寄存器相邻的域阵列区域。 然后，行通过阵列区域传播到第二移位寄存器，在那里它们被单独地检测和消除。 控制装置确保所有元件之间的正确工作关系。

公开(公告)号：US6054969A

公开(公告)日：2000-04-25

申请号：US612154

申请日：1996-03-07

申请人： Jan Haisma

发明人： Jan Haisma

IPC分类号： G02B27/22 ,  H04N13/00 ,  H04N13/04 ,  G09G5/00

CPC分类号： H04N13/0207 ,  G02B27/2221 ,  G02B27/2278 ,  H04N13/004 ,  H04N13/0048 ,  H04N13/0051 ,  H04N13/0239 ,  H04N13/025 ,  H04N13/0404 ,  H04N13/0443 ,  H04N13/0495 ,  H04N13/0497 ,  H04N13/0003 ,  H04N13/0037 ,  H04N13/0059 ,  H04N13/0285 ,  H04N13/0422 ,  H04N13/0434 ,  H04N2013/0077 ,  H04N2013/0081 ,  H04N2013/0096

摘要： A three-dimensional image display system, based on a novel depth concept referred to as Double-D-Depth, includes a first display device (3) and at least a second display device (4) which, viewed along the system axis (9-91), are offset with respect to each other and are each intended to partially display the same two-dimensional image of a scene, while parameters which are relevant to depth representation are included in the form of an additional dedicated intensity gradation in at least one of the displayed images, and all images, together with the axial distance (.quadrature.L) in between, evoke a depth effect with a viewer (10).

摘要翻译： 基于称为双D深度的新颖深度概念的三维图像显示系统包括第一显示装置（3）和至少第二显示装置（4），其沿着系统轴（9 -91）相对于彼此偏移并且各自旨在部分地显示场景的相同的二维图像，而与深度表示相关的参数至少包括在额外的专用强度等级的形式中 显示的图像之一和所有图像以及其间的轴向距离（＆squ＆L）引起观察者（10）的深度效应。

公开(公告)号：US5425848A

公开(公告)日：1995-06-20

申请号：US214888

申请日：1994-03-15

申请人： Jan Haisma ,  Martinus Verheijen ,  Johannes T. Schrama

发明人： Jan Haisma ,  Martinus Verheijen ,  Johannes T. Schrama

IPC分类号： G02B5/20 ,  B29C35/08 ,  B29C35/10 ,  B29C39/14 ,  G03F7/20 ,  G09F3/02 ,  H01L21/027 ,  B44C1/22 ,  B29C37/00

CPC分类号： B29C43/003 ,  B29C35/0888 ,  B29C35/10 ,  B29C39/148 ,  G03F7/2012 ,  B29C2035/0827 ,  B29C2043/025

摘要： A description is given of a method and a device (1) for providing (replicating) a patterned resyntetic resin relief (37) on the surface (25) of a glass substrate (27). For this purpose, a UV-curable acrylate lacquer (33) is applied to the surface (25), after which a transparent mould (3) having a relief (13) is rolled-off over the surface (25). By means of a UV light source (17) and an elliptic mirror (21), the lacquer is cured at the location of the focal line (23), thereby forming said relief (37). The relief (13) of the mould (3) is replicated on the glass substrate (27). The method described enables a relief of small dimensions (10.times.10 .mu.m) to be seamlessly provided on a large fiat surface (1.times.1 m), without being hindered by large release forces.

摘要翻译： 给出了在玻璃基板（27）的表面（25）上提供（复制）图案化再生树脂浮雕（37）的方法和装置（1）的描述。 为此，将UV可固化的丙烯酸酯漆（33）施加到表面（25）上，之后在表面（25）上滚动具有浮雕（13）的透明模具（3）。 通过UV光源（17）和椭圆镜（21），在焦线（23）的位置处固化漆，从而形成所述浮雕（37）。 模具（3）的浮雕（13）被复制在玻璃基板（27）上。 所描述的方法使得可以在大的平坦表面（1x1m）上无缝地提供小尺寸（10x10μm）的浮雕，而不受大的释放力的阻碍。

公开(公告)号：US5302559A

公开(公告)日：1994-04-12

申请号：US896489

申请日：1992-06-02

申请人： Dieter Mateika ,  Erich Volkel ,  Jan Haisma

发明人： Dieter Mateika ,  Erich Volkel ,  Jan Haisma

IPC分类号： C30B15/00 ,  C04B35/60 ,  C04B35/00

CPC分类号： C30B15/00 ,  C30B29/28

摘要： A method of growing mixed crystals having at least two lattice sites each having a different number of adjacent oxygen ions from melts of oxidic multi-component systems, homogeneous mixed crystals being grown such that the cations intended to occupy the first lattice site having the highest number of adjacent oxygen ions and to occupy the second lattice site having the next lowest number of adjacent oxygen ions are chosen such that the ratio of the bond length of the cations in the first lattice site to the bond length of the cations in the second lattice site is in the range from 0.7 to 1.5.

摘要翻译： 生长混合晶体的方法，其具有至少两个晶格点，每个具有不同数量的相邻氧离子与氧化多组分系统的熔融，生长均匀的混合晶体，使得预期占据具有最高数目的第一晶格位点的阳离子 的相邻氧离子并且占据具有次最低数量的相邻氧离子的第二晶格位点，使得第一晶格位点中的阳离子的键长与第二晶格位点中的阳离子的键长的比例 在0.7至1.5的范围内。

公开(公告)号：US5009689A

公开(公告)日：1991-04-23

申请号：US7153

申请日：1987-01-27

申请人： Jan Haisma ,  Cornelis L. Alting ,  Theodorus M. Michielsen

发明人： Jan Haisma ,  Cornelis L. Alting ,  Theodorus M. Michielsen

IPC分类号： H01L27/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/31

CPC分类号： H01L21/268 ,  H01L21/2007

摘要： In a method of manufacturing a semiconductor device, at least a support body (1) and a monocrystalline semiconductor body (2) are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing), while at least the semiconductor body is provided at the optically smooth surface with an oxide layer (3). The two bodies (1 and 2) are brought into contact with each other in a dust-free atmosphere after their flat surfaces have been cleaned in order to obtain a mechanical connection. Before the bodies are brought into contact with each other, at least the oxide layer (3) on the semiconductor body (2) is subjected to a bonding-activating operation, while after a connection has been formed between the surfaces, radiation (5) of a laser is focused on the connection surface of the two bodies and material of at least the semiconductor body is molten locally near the connection surface by means of the laser radiation. After solidification, a locally fused connection has been established between the two bodies. The semiconductor body (2) is formed from a material admitting a sufficient oxygen diffusion.

摘要翻译： 在制造半导体器件的方法中，至少一个支撑体（1）和单晶体半导体本体（2）设置有至少一个通过大量减少抛光（镜面抛光）获得的平坦的光学光滑表面，而在 至少半导体体在光学平滑表面上设置有氧化物层（3）。 为了获得机械连接，两个主体（1和2）在其平坦表面被清洁之后在无尘环境中彼此接触。 在物体彼此接触之前，至少在半导体主体（2）上的氧化物层（3）进行接合激活操作，而在表面之间形成连接之后，辐射（5） 激光的焦点集中在两个主体的连接表面上，并且至少半导体主体的材料通过激光辐射局部地熔融在连接表面附近。 凝固后，两个体之间建立了局部融合的连接。 半导体本体（2）由承受足够的氧扩散的材料形成。

公开(公告)号：US4994139A

公开(公告)日：1991-02-19

申请号：US504727

申请日：1990-04-03

申请人： Udo K. P. Biermann ,  Gijsbertus A. C. M. Spierings ,  Franciscus J. H. M. van der Kruis ,  Jan Haisma

发明人： Udo K. P. Biermann ,  Gijsbertus A. C. M. Spierings ,  Franciscus J. H. M. van der Kruis ,  Jan Haisma

IPC分类号： G02B6/13 ,  C03C19/00 ,  C03C27/00 ,  H01L21/20 ,  H01L31/0203

CPC分类号： H01L31/0203 ,  C03C19/00 ,  H01L21/2007 ,  Y10S438/977

摘要： An optical device is manufactured by providing a disc-shaped body of a light-conducting material on a plane surface of a disc-shaped carrier body, grinding the light-conducting material mechanically to a thickness which exceeds the desired ultimate layer thickness by at least 50 .mu.m, subjecting the light-conducting material to alternate tribochemical and mechanical polishing treatments until a thickness is obtained which exceeds the desired ultimate layer thickness by approximately 10 .mu.m, and subsequently polishing the light-conductor body tribochemically until the desired layer thickness is obtained.

公开(公告)号：US4983251A

公开(公告)日：1991-01-08

申请号：US874748

申请日：1986-06-16

申请人： Jan Haisma ,  Theodorus M. Michielsen ,  Jan A. Pals

发明人： Jan Haisma ,  Theodorus M. Michielsen ,  Jan A. Pals

IPC分类号： H01L27/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/263 ,  H01L21/3205 ,  H01L21/58 ,  H01L21/762 ,  H01L21/768 ,  H01L21/822 ,  H01L21/84 ,  H01L23/52 ,  H01L25/065 ,  H01L27/12

CPC分类号： H01L25/50 ,  H01L21/2007 ,  H01L21/76251 ,  H01L21/8221 ,  H01L24/24 ,  H01L24/26 ,  H01L24/82 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/24145 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2225/06551 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  Y10S148/012

摘要： A method for manufacturing a semiconductor device comprising at least a support body and a monocrystalline semiconductor body, in which both bodies are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing), and at least the semiconductor body is then provided at the optically smooth surface with an electrically insulating layer with at least the electrically insulating layer on the semiconductor body being subjected to a bonding-activating operation, whereupon both bodies after their flat surfaces have been cleaned, are contacted with each other in a dust-free atmosphere in order to obtain a rigid mechanical connection, after which they are subjected to a heat treatment of at least 250.degree. C., whereupon the semiconductor body is etched to a thin layer having a thickness lying between 0.05 and 100 .mu.m.

摘要翻译： 一种制造半导体器件的方法，至少包括支撑体和单晶体半导体本体，其中两个主体均具有通过体积减少抛光（镜面抛光）获得的至少一个平坦的光学平滑表面，并且至少 然后在光学平滑表面上设置电绝缘层，半导体本体上的至少电绝缘层进行接合激活操作，随后两个主体在其平坦表面被清洁之后与每一个接触 另一个在无尘气氛中以获得刚性的机械连接，之后对其进行至少250℃的热处理，然后将半导体主体蚀刻到厚度介于0.05和 100亩。

公开(公告)号：US4971925A

公开(公告)日：1990-11-20

申请号：US142763

申请日：1988-01-11

申请人： Elizabeth M. L. Alexander ,  Jan Haisma ,  Theodorus Michielsen ,  Johannes Van Der Velden ,  Johannes F. C. M. Verhoeven

发明人： Elizabeth M. L. Alexander ,  Jan Haisma ,  Theodorus Michielsen ,  Johannes Van Der Velden ,  Johannes F. C. M. Verhoeven

IPC分类号： H01L21/304 ,  H01L21/31 ,  H01L21/762 ,  H01L27/00

CPC分类号： H01L21/76297 ,  Y10S148/135 ,  Y10S148/164

摘要： In a method of manufacturing a semiconductor device of the "semiconductor on insulator" type comprising at least one carrier body and a monocrystalline semiconductor body, in a major surface (2) of a monocrystalline semiconductor body (1) grooves (3) are provided having a predetermined depth. The surface provided with grooves is coated with a layer (4) of material resistant to polishing; and this layer is coated with a layer (5) of a chemomechanically polishable material having a layer thickness exceeding the groove depth, the latter layer (5) being polished to flatness and smoothness. The polished surface of the semiconductor body (1) is connected to a smooth flat major surface of a carrier body (6). Subsequently, the semiconductor body (1) is made thin, at least the last part of this operation consisting of a polishing step, which terminates on the layer (4) of material resistant to polishing so that mutually insulated "semiconductor an insulator" regions are obtained, the thickness of the semiconductor regions being equal to the depth of the grooves.