公开(公告)号：US20070115625A1

公开(公告)日：2007-05-24

申请号：US11603191

申请日：2006-11-22

Applicant: Jin Jang ,  Jae Jung ,  Yong Kim ,  Hyo Song ,  Hwan Lim

Inventor： Jin Jang ,  Jae Jung ,  Yong Kim ,  Hyo Song ,  Hwan Lim

IPC: G06F1/16

CPC classification number: H05K3/0061 ,  G02F1/133308 ,  G02F2001/133314 ,  H05K1/181 ,  H05K3/361 ,  H05K2203/063

Abstract: A display device which may include a bottom chassis receiving a display panel, at least one printed circuit board mounting parts for controlling the display panel, and a reinforcing chassis attached to the printed circuit board.

Abstract translation: 一种显示装置，其可以包括接收显示面板的底部底盘，用于控制显示面板的至少一个印刷电路板安装部件和附接到印刷电路板的加强底板。

公开(公告)号：US20070115269A1

公开(公告)日：2007-05-24

申请号：US11545499

申请日：2006-10-11

Applicant: Jin Jang ,  Tae Kim ,  Jae Jung ,  Yong Kim ,  Hyo Song ,  Hwan Lim

Inventor： Jin Jang ,  Tae Kim ,  Jae Jung ,  Yong Kim ,  Hyo Song ,  Hwan Lim

IPC: G09G3/22

CPC classification number: G02F1/133308 ,  G02F2001/13332 ,  G02F2202/28

Abstract: A display window assembly having a reduced thickness, which can be easily manufactured with increased yield. The display window assembly may be employed with portable electronic devices. The display window assembly may include a case including an engaging portion and a predetermined opening, the predetermined opening may be at least partially defined by opposing surfaces of the case and the engaging portion may protrude from at least one of the opposing surfaces of the case, a transparent member having a first surface and a second surface, a display device, a connecting mechanism arranged between the second surface of the transparent member and a first surface of the display device, the connecting mechanism attaching the transparent member to the display device, and a backlight unit (BLU) arranged on a second surface of the display device, opposite to the first surface, to project light to the display device.

Abstract translation: 具有减小的厚度的显示窗组件，其可以容易地以增加的产量制造。 显示窗组件可以与便携式电子设备一起使用。 显示窗组件可以包括包括接合部分和预定开口的壳体，预定开口可以至少部分地由壳体的相对表面限定，并且接合部分可以从壳体的至少一个相对表面突出， 具有第一表面和第二表面的透明构件，显示装置，布置在透明构件的第二表面和显示装置的第一表面之间的连接机构，将透明构件附接到显示装置的连接机构，以及 布置在所述显示装置的与所述第一表面相对的第二表面上的背光单元（BLU）将光投影到所述显示装置。

公开(公告)号：US20070024547A1

公开(公告)日：2007-02-01

申请号：US11396925

申请日：2006-04-03

Applicant: Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

Inventor： Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

IPC: G09G3/30

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0262 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2360/145 ,  G09G2360/148

Abstract: Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.

Abstract translation: 公开了具有使用薄膜晶体管（TFT）作为有源器件的像素电路的有机发光二极管（OLED）显示装置及其驱动方法。 由于用于信号电压的像素的亮度不被晶体管（例如，驱动元件）和OLED的特征方差改变，所以OLED显示装置可以经常地获得发光元件的亮度。 因此，根据本发明的OLED显示装置可以最小化由于长时间使用引起的晶体管和OLED的劣化导致的像素亮度的变化，并且增加显示装置的使用寿命。 此外，即使在高精度显示的情况下，OLED显示装置也可以显示高质量的图像，因为它被控制以将电流流动到包括在每个像素中的OLED。

公开(公告)号：US20060130939A1

公开(公告)日：2006-06-22

申请号：US10533998

申请日：2003-11-06

Applicant: Jin Jang ,  Jonghyun Choi ,  Do-Young Kim ,  Byoung-Kwon Choo

Inventor： Jin Jang ,  Jonghyun Choi ,  Do-Young Kim ,  Byoung-Kwon Choo

IPC: C22F1/00

CPC classification number: H01L21/02667 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/268

Abstract: The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the amorphous material; depositing a metal on the cap layer; and crystallizing the amorphous material. According to the present invention, the surface of the amorphous material is protected by the cap layer, so that clean surface can be obtained and the roughness of the surface can be remarkably reduced during thermal process and sample handling. In addition, the cap layer is disposed between the amorphous material and the metal to diffuse the metal, so that the metal contamination due to the direct contact of the metal and the amorphous material in the conventional method can be remarkably reduced.

公开(公告)号：US20060119718A1

公开(公告)日：2006-06-08

申请号：US11295373

申请日：2005-12-06

Applicant: Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

Inventor： Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

IPC: H04N5/335

CPC classification number: H04N5/37452 ,  H04N5/3559

Abstract: Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.

Abstract translation: 公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸 在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。 具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

公开(公告)号：US06524662B2

公开(公告)日：2003-02-25

申请号：US09350816

申请日：1999-07-09

Applicant: Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

Inventor： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

IPC: H05H100

CPC classification number: C30B1/023 ,  C30B29/06

Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer while applying an electric field to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, an electric field generating means in the chamber wherein the electric field generating means applies electric field to the substrate, and a heater at the substrate support wherein the heater supplies the substrate with heat.

Abstract translation: 本发明涉及一种使非晶硅层结晶的方法及其使用电场和等离子体使非晶硅层结晶的结晶装置。 本发明包括以下步骤：通过等离子体曝光在非晶硅层上淀积用于硅结晶的诱导物质，同时对非晶硅层施加电场，对非晶硅层进行退火。 本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体;电场产生装置， 其中电场产生装置向衬底施加电场，以及在衬底支撑件处的加热器，其中加热器对衬底供热。

公开(公告)号：US07876296B2

公开(公告)日：2011-01-25

申请号：US11396932

申请日：2006-04-03

Applicant: Jin Jang ,  Jae-Won Choi

Inventor： Jin Jang ,  Jae-Won Choi

IPC: G09G3/32

CPC classification number: G09G3/3233 ,  G09G3/3291 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2320/0233 ,  G09G2320/043

Abstract: Disclosed are driving circuit and method which are used in an Organic Light Emitting Diode (OLED), and more specifically to a driving circuit of an organic light emitting diode and a driving method thereof which use a thin film transistor (TFT) as an active device. The driving circuit and method can uniformly produce luminance of the light emitting element because the driving current is produced by compensating the unevenness of threshold voltage of the active device. Further, the variance of the threshold voltage Vth due to deterioration of the transistor produced according as the driving circuit of the OLED is utilized for a long time is also compensated, thereby increasing life of the display device which applies the driving circuit of the OLED.

Abstract translation: 公开了用于有机发光二极管（OLED）的驱动电路和方法，更具体地说，涉及使用薄膜晶体管（TFT）作为有源器件的有机发光二极管的驱动电路及其驱动方法 。 驱动电路和方法可以均匀地产生发光元件的亮度，因为通过补偿有源器件的阈值电压的不均匀性来产生驱动电流。 此外，由于OLED的驱动电路产生的晶体管的劣化导致的阈值电压Vth的变化长时间被利用也得到补偿，从而延长了施加OLED的驱动电路的显示装置的寿命。

公开(公告)号：US20100176380A1

公开(公告)日：2010-07-15

申请号：US12451746

申请日：2008-05-30

Applicant: Ho Kuk Jung ,  Eui Su Kang ,  Myeong Soon Kang ,  Jin Seong Park ,  Eun Sun Yu ,  Dal Ho Huh ,  Mi Young Chae ,  Jang Hyuk Kwon ,  Jin Jang ,  Tae Jin Park ,  Woo Sik Jeon

Inventor： Ho Kuk Jung ,  Eui Su Kang ,  Myeong Soon Kang ,  Jin Seong Park ,  Eun Sun Yu ,  Dal Ho Huh ,  Mi Young Chae ,  Jang Hyuk Kwon ,  Jin Jang ,  Tae Jin Park ,  Woo Sik Jeon

IPC: H01L51/54

CPC classification number: C09K11/06 ,  C07D213/30 ,  C07D221/08 ,  C07D221/10 ,  C07D263/57 ,  C07D277/24 ,  C07F7/0836 ,  C09B57/00 ,  C09B57/007 ,  C09B57/10 ,  C09K2211/1029 ,  C09K2211/1033 ,  C09K2211/1037 ,  C09K2211/1044 ,  C09K2211/1059 ,  C09K2211/186 ,  H01L51/0077 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5036 ,  H01L2251/554 ,  H05B33/14

Abstract: The present invention relates to an organic photoelectric device and a material used therein. The organic photoelectric device includes a substrate, an anode disposed on the substrate, a hole transport layer (HTL) disposed on the anode, an emission layer disposed on the hole transport layer (HTL), and a cathode disposed on the emission layer. The emission layer is characterized in that it includes a host and a phosphorescent dopant, and the host has a difference between the reduction potential or oxidation potential of the host and the reduction potential or oxidation potential of the phosphorescent dopant of less than 0.5 eV. The organic photoelectric device according to the present invention is capable of accomplishing higher efficiency and a lower driving voltage than those of the conventional organic photoelectric device, and has a simplified structure resulting in saving of manufacturing cost.

Abstract translation: 本发明涉及一种有机光电装置及其中使用的材料。 有机光电装置包括基板，设置在基板上的阳极，设置在阳极上的空穴传输层（HTL），设置在空穴传输层（HTL）上的发射层，以及设置在发射层上的阴极。 发射层的特征在于其包括主体和磷光掺杂剂，并且主体具有小于0.5eV的磷光掺杂剂的还原电位或氧化电位与还原电位或氧化电位之间的差异。 根据本发明的有机光电装置能够实现比传统的有机光电装置更高的效率和更低的驱动电压，并且具有简化的结构，从而节省制造成本。

公开(公告)号：US07492088B2

公开(公告)日：2009-02-17

申请号：US11285552

申请日：2005-11-21

Applicant: Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

Inventor： Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

IPC: H01J1/304 ,  H01J1/62

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer.

Abstract translation: 提供了一种形成碳纳米管的方法，具有使用该方法形成的碳纳米管的场致发射显示装置以及该场致发射显示装置的制造方法。 形成碳纳米管的方法包括在基板上形成催化金属层，在催化金属层上形成绝缘层，在绝缘层上形成碳纳米管。

公开(公告)号：US07390727B2

公开(公告)日：2008-06-24

申请号：US11491227

申请日：2006-07-24

Applicant: Jin Jang ,  Seong-Jin Park

Inventor： Jin Jang ,  Seong-Jin Park

IPC: H01L21/20

CPC classification number: H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296

Abstract: The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3 in average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.

Abstract translation: 本发明涉及通过使包含镍的非晶硅层结晶而形成的含有Ni的多晶硅膜。 本发明包括多晶硅膜，其中多晶膜含有浓度范围为2×10 17至5×10 19原子/ cm 3的Ni原子。 并且包括多个针状硅微晶。 另一方面，本发明包括多晶硅膜，其中多晶膜含有密度为2×10 17至5×10 19原子/ cm 3的Ni原子 包括多个针状硅微晶，并形成在绝缘基板上。 根据本发明的这种多晶硅膜避免了通常以常规的金属诱导结晶方法产生的金属污染。