公开(公告)号：US06524662B2

公开(公告)日：2003-02-25

申请号：US09350816

申请日：1999-07-09

Applicant: Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

Inventor： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

IPC: H05H100

CPC classification number: C30B1/023 ,  C30B29/06

Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer while applying an electric field to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, an electric field generating means in the chamber wherein the electric field generating means applies electric field to the substrate, and a heater at the substrate support wherein the heater supplies the substrate with heat.

Abstract translation: 本发明涉及一种使非晶硅层结晶的方法及其使用电场和等离子体使非晶硅层结晶的结晶装置。 本发明包括以下步骤：通过等离子体曝光在非晶硅层上淀积用于硅结晶的诱导物质，同时对非晶硅层施加电场，对非晶硅层进行退火。 本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体;电场产生装置， 其中电场产生装置向衬底施加电场，以及在衬底支撑件处的加热器，其中加热器对衬底供热。

公开(公告)号：US07390727B2

公开(公告)日：2008-06-24

申请号：US11491227

申请日：2006-07-24

Applicant: Jin Jang ,  Seong-Jin Park

Inventor： Jin Jang ,  Seong-Jin Park

IPC: H01L21/20

CPC classification number: H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296

Abstract: The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3 in average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.

Abstract translation: 本发明涉及通过使包含镍的非晶硅层结晶而形成的含有Ni的多晶硅膜。 本发明包括多晶硅膜，其中多晶膜含有浓度范围为2×10 17至5×10 19原子/ cm 3的Ni原子。 并且包括多个针状硅微晶。 另一方面，本发明包括多晶硅膜，其中多晶膜含有密度为2×10 17至5×10 19原子/ cm 3的Ni原子 包括多个针状硅微晶，并形成在绝缘基板上。 根据本发明的这种多晶硅膜避免了通常以常规的金属诱导结晶方法产生的金属污染。

公开(公告)号：US06818059B2

公开(公告)日：2004-11-16

申请号：US09350313

申请日：1999-07-09

Applicant: Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

Inventor： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

IPC: C30B106

CPC classification number: H01L21/02672 ,  C30B1/023 ,  C30B29/06 ,  H01J37/32009 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  Y10T117/10 ,  Y10T117/1008

Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.

Abstract translation: 本发明涉及一种使非晶硅层结晶的方法及其使用等离子体结晶非晶硅层的结晶装置。 本发明包括以下步骤：通过等离子体曝光在非晶硅层上沉积用于硅结晶的诱导物质，并在非晶硅层上对非晶硅层进行退火。 本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体，以及衬底支撑件处的加热器 其中所述加热器对所述基板供热。

公开(公告)号：US07339188B1

公开(公告)日：2008-03-04

申请号：US09497508

申请日：2000-02-04

Applicant: Jin Jang ,  Seong-Jin Park

Inventor： Jin Jang ,  Seong-Jin Park

IPC: H01L29/04

CPC classification number: H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296

Abstract: The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3 on average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.

Abstract translation: 本发明涉及通过使包含镍的非晶硅层结晶而形成的含有Ni的多晶硅膜。 本发明包括多晶硅膜，其中多晶膜含有浓度范围为2×10 17至5×10 19原子/ cm 3的Ni原子。 并且包括多个针状硅微晶。 另一方面，本发明包括多晶硅膜，其中多晶膜含有密度为2×10 17至5×10 19原子/ cm 3的Ni原子 包括多个针状硅微晶，并形成在绝缘基板上。 根据本发明的这种多晶硅膜避免了通常以常规的金属诱导结晶方法产生的金属污染。

公开(公告)号：US20060270198A1

公开(公告)日：2006-11-30

申请号：US11491227

申请日：2006-07-24

Applicant: Jin Jang ,  Seong-Jin Park

Inventor： Jin Jang ,  Seong-Jin Park

IPC: H01L21/20

CPC classification number: H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296

Abstract: The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3 on average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.

Abstract translation: 本发明涉及通过使包含镍的非晶硅层结晶而形成的含有Ni的多晶硅膜。 本发明包括多晶硅膜，其中多晶膜含有浓度范围为2×10 17至5×10 19原子/ cm 3的Ni原子。 并且包括多个针状硅微晶。 另一方面，本发明包括多晶硅膜，其中多晶膜含有密度为2×10 17至5×10 19原子/ cm 3的Ni原子 包括多个针状硅微晶，并形成在绝缘基板上。 根据本发明的这种多晶硅膜避免了通常以常规的金属诱导结晶方法产生的金属污染。

公开(公告)号：US07022191B2

公开(公告)日：2006-04-04

申请号：US10899014

申请日：2004-07-27

Applicant: Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

Inventor： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

IPC: C30B25/14

CPC classification number: H01L21/02672 ,  C30B1/023 ,  C30B29/06 ,  H01J37/32009 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  Y10T117/10 ,  Y10T117/1008

Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.

Abstract translation: 本发明涉及一种使非晶硅层结晶的方法及其使用等离子体结晶非晶硅层的结晶装置。 本发明包括以下步骤：通过等离子体曝光在非晶硅层上沉积用于硅结晶的诱导物质，并在非晶硅层上对非晶硅层进行退火。 本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体，以及衬底支撑件处的加热器 其中所述加热器对所述基板供热。

公开(公告)号：US07688370B2

公开(公告)日：2010-03-30

申请号：US11295373

申请日：2005-12-06

Applicant: Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

Inventor： Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

IPC: H04N3/14

CPC classification number: H04N5/37452 ,  H04N5/3559

Abstract: Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.

Abstract translation: 公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸 在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。 具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

公开(公告)号：US07662681B2

公开(公告)日：2010-02-16

申请号：US11609374

申请日：2006-12-12

Applicant: Jin Jang ,  Jun-Hyuk Cheon

Inventor： Jin Jang ,  Jun-Hyuk Cheon

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/78678 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66765

Abstract: Disclosed herein is a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor, and more specifically a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor wherein a phosphosilicate-spin-on-glass (P-SOG) is used for a gate insulating film. The method comprises the steps of: forming a buffer layer on an insulating substrate; forming a gate metal pattern on the buffer layer; forming a planarized gate insulating film on the gate metal pattern; depositing an amorphous silicon layer on the gate insulating film; crystallizing the amorphous silicon layer into a polycrystalline silicon layer; forming a n+ or p+ layer on the polycrystalline silicon layer; forming a source/drain metal layer on the n+ or p+ layer; and forming a passivation layer on the source/drain metal layer.

Abstract translation: 本文公开了一种用于制造反向交错多晶硅薄膜晶体管的方法，更具体地说，一种用于制造反向交错多晶硅薄膜晶体管的方法，其中磷硅酸盐旋涂玻璃（P-SOG）用于 栅极绝缘膜。 该方法包括以下步骤：在绝缘基板上形成缓冲层; 在缓冲层上形成栅极金属图案; 在栅极金属图案上形成平坦化的栅极绝缘膜; 在栅极绝缘膜上沉积非晶硅层; 将所述非晶硅层结晶成多晶硅层; 在多晶硅层上形成n +或p +层; 在n +或p +层上形成源极/漏极金属层; 以及在源极/漏极金属层上形成钝化层。

公开(公告)号：US20090032873A1

公开(公告)日：2009-02-05

申请号：US11895125

申请日：2007-08-23

Applicant: Jeffrey Scott Cites ,  Jin Jang ,  ChuanChe Wang ,  Carlo Anthony Kosik Williams ,  Sung Eun Ahn

Inventor： Jeffrey Scott Cites ,  Jin Jang ,  ChuanChe Wang ,  Carlo Anthony Kosik Williams ,  Sung Eun Ahn

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78603 ,  H01L21/2007 ,  H01L29/78654

Abstract: Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.

Abstract translation: 用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。

公开(公告)号：US20090021287A1

公开(公告)日：2009-01-22

申请号：US11662605

申请日：2004-09-15

Applicant: Jin Jang ,  Joon-Chul Goh

Inventor： Jin Jang ,  Joon-Chul Goh

IPC: H03K3/00

CPC classification number: G09G3/3233 ,  G09G3/3291 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/043

Abstract: A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED.

Abstract translation: 用于有机发光二极管（OLED）的驱动电路，以及使用驱动电路驱动OLED的方法。 驱动电路包括像素电路，每个像素电路包括用于接收数据电压的第一晶体管和向OLED输出驱动电流，用于将数据电压传输到第一晶体管的第二晶体管，用于连接栅极和 第一晶体管的漏极，用于存储第一晶体管的栅极电压的电容器和连接到第一晶体管的漏极的第四晶体管。 OLED通过第五晶体管连接到第一晶体管的源极，或者直接连接到第一晶体管的源极而不使用第五晶体管。 驱动电路基于第一晶体管的不均匀补偿阈值电压产生驱动电流，从而获得OLED的均匀亮度。