公开(公告)号：US07422708B2

公开(公告)日：2008-09-09

申请号：US11373460

申请日：2006-03-10

申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

IPC分类号： H01B1/02 ,  H01B1/20

CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

公开(公告)号：US07259100B2

公开(公告)日：2007-08-21

申请号：US11271041

申请日：2005-11-10

申请人： Fabio Zurcher ,  Brent Ridley ,  Klaus Kunze ,  Scott Haubrich ,  Joerg Rockenberger

发明人： Fabio Zurcher ,  Brent Ridley ,  Klaus Kunze ,  Scott Haubrich ,  Joerg Rockenberger

IPC分类号： H01L21/302

CPC分类号： H01L21/02628 ,  B22F9/20 ,  B22F2998/00 ,  B82Y30/00 ,  C01G3/02 ,  C01G19/02 ,  C01G23/047 ,  C01G25/02 ,  C01G31/02 ,  C01G33/00 ,  C01G45/02 ,  C01G49/02 ,  C01G51/04 ,  C01P2002/52 ,  C01P2004/64 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/84 ,  H01L23/373 ,  H01L27/1292 ,  H01L2924/0002 ,  Y10S977/888 ,  B22F1/0022 ,  H01L2924/00

摘要： A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanoparticles and a metal oxide matrix. The nanoparticles are then isolated from the composite material by etching at least a portion of the metal oxide matrix to release the metal nanoparticles. In accordance with the embodiments of the invention, the nanoparticles are treated with surfactants and wetting agents either while etching or after etching, are isolated from the etchant and dispersed in a solvent medium and/or are otherwise treated or modified for use in a nanoparticle inks. A layer of the metal nanoparticle ink can then be used to form doped, undoped, patterned and unpatterned device layers or structures in micro-devices.

摘要翻译： 公开了一种制备纳米颗粒，纳米颗粒油墨及其装置层的方法。 根据本发明，从通过处理金属氧化物前体形成金属纳米颗粒和金属氧化物基质形成的复合材料分离纳米颗粒。 然后通过蚀刻至少一部分金属氧化物基质以释放金属纳米颗粒，从复合材料中分离出纳米颗粒。 根据本发明的实施方案，在蚀刻或蚀刻之后，用表面活性剂和润湿剂处理纳米颗粒，与蚀刻剂分离并分散在溶剂介质中和/或以其它方式处理或改性以用于纳米颗粒油墨 。 然后可以使用一层金属纳米颗粒油墨在微型装置中形成掺杂的，未掺杂的，图案化的和无图案化的器件层或结构。

公开(公告)号：US20060154036A1

公开(公告)日：2006-07-13

申请号：US11373696

申请日：2006-03-10

申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

IPC分类号： B32B18/00

CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

公开(公告)号：US06878184B1

公开(公告)日：2005-04-12

申请号：US10215952

申请日：2002-08-09

申请人： Joerg Rockenberger ,  Fabio Zurcher ,  Scott Haubrich ,  Nassrin Sleiman

发明人： Joerg Rockenberger ,  Fabio Zurcher ,  Scott Haubrich ,  Nassrin Sleiman

IPC分类号： B22F1/00 ,  B22F9/24 ,  C09D11/00 ,  C09D11/02 ,  H01B1/02 ,  H01B1/22 ,  H05K3/12

CPC分类号： B22F1/0022 ,  B22F1/0018 ,  B22F9/24 ,  B22F2998/00 ,  B82Y30/00 ,  C09D11/03 ,  C09D11/30 ,  H01B1/02 ,  H01B1/22 ,  H05K3/1241 ,  B22F1/0062

摘要： Methods for making metal-based nanoparticles and inks are disclosed. In accordance with the method of the present invention, molecular metal precursors are reduced in the presence of a reaction medium to form the nanoparticles. The molecular metal precursors are preferably reduced by heating the metal precursor in the medium, by adding a reducing agent, such an aldehyde or a combination thereof. Metal precursor are preferably metal oxides, transition metal complexes or combination thereof. The method of the present invention is used to make high yield nanoparticles with a range of particle size distributions. Nanoparticle formed by the present invention include mixtures of nanoparticle, alloy nanoparticles, metal core shell nanoparticles or nanoparticle comprising a single metal species.

摘要翻译： 公开了制备金属基纳米颗粒和油墨的方法。 根据本发明的方法，分子金属前体在反应介质存在下还原形成纳米颗粒。 分子金属前体优选通过加热介质中的金属前体，通过加入还原剂，醛或其组合来还原。 金属前体优选为金属氧化物，过渡金属络合物或其组合。 本发明的方法用于制备具有粒度分布范围的高产率纳米颗粒。 由本发明形成的纳米颗粒包括纳米颗粒，合金纳米颗粒，金属核壳纳米颗粒或包含单一金属物质的纳米颗粒的混合物。

公开(公告)号：US07879696B2

公开(公告)日：2011-02-01

申请号：US10616147

申请日：2003-07-08

申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

IPC分类号： H01L21/20

CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

公开(公告)号：US07315068B2

公开(公告)日：2008-01-01

申请号：US11077240

申请日：2005-03-09

申请人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

发明人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

IPC分类号： H01L29/94

CPC分类号： H01L27/1292

摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

公开(公告)号：US20060157677A1

公开(公告)日：2006-07-20

申请号：US11373460

申请日：2006-03-10

申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

IPC分类号： H01B1/12

CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

公开(公告)号：US20050164480A1

公开(公告)日：2005-07-28

申请号：US11077240

申请日：2005-03-09

申请人： Scott Haubrich ,  Klaus Kunze ,  James Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Christopher Spindt

发明人： Scott Haubrich ,  Klaus Kunze ,  James Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Christopher Spindt

IPC分类号： H01L21/44 ,  H01L21/76 ,  H01L21/77

CPC分类号： H01L27/1292

摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

公开(公告)号：US06911385B1

公开(公告)日：2005-06-28

申请号：US10226903

申请日：2002-08-22

申请人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

发明人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

IPC分类号： H01L21/44 ,  H01L21/76 ,  H01L21/77

CPC分类号： H01L27/1292

摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

公开(公告)号：US20120181636A1

公开(公告)日：2012-07-19

申请号：US13427091

申请日：2012-03-22

申请人： Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

发明人： Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

IPC分类号： H01L29/772 ,  H01L23/485 ,  H01L21/336

CPC分类号： H01L21/288 ,  H01L21/28518 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/78618 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.

摘要翻译： 公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。 可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。