摘要:
A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a resist layer over the conductive layer; and exposing and developing the resist layer.
摘要:
The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; a plurality of material layers formed on the semiconductor substrate, each of the material layers including a circuit pattern therein; and a plurality of diffraction-based periodic marks formed in the plurality of material layers and stacked in a same region. One of the diffraction-based periodic marks is different from at least one other of the diffraction-based periodic marks in pitch.
摘要:
A method includes forming an absorption material layer on a mask; applying a plasma treatment to the mask to reduce chemical contaminants after the forming of the absorption material layer; performing a chemical cleaning process of the mask; and performing a gas injection to the mask.
摘要:
A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.
摘要:
A method of inhibiting photoresist pattern collapse which includes the steps of providing a substrate; providing a photoresist layer on the substrate; exposing and developing the photoresist layer; applying a top anti-reflective coating layer to the photoresist layer; rinsing the photoresist layer; and drying the photoresist layer.