METHOD AND STRUCTURE OF STACKING SCATTEROMETRY-BASED OVERLAY OR CD MARKS FOR MARK FOOTPRINT REDUCTION
    32.
    发明申请
    METHOD AND STRUCTURE OF STACKING SCATTEROMETRY-BASED OVERLAY OR CD MARKS FOR MARK FOOTPRINT REDUCTION 有权
    堆叠基于SCATTERMETRYET的覆盖或CD标记的标记减少的方法和结构

    公开(公告)号:US20110024924A1

    公开(公告)日:2011-02-03

    申请号:US12511638

    申请日:2009-07-29

    IPC分类号: H01L23/544 H01L21/66

    摘要: The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; a plurality of material layers formed on the semiconductor substrate, each of the material layers including a circuit pattern therein; and a plurality of diffraction-based periodic marks formed in the plurality of material layers and stacked in a same region. One of the diffraction-based periodic marks is different from at least one other of the diffraction-based periodic marks in pitch.

    摘要翻译: 本发明提供集成电路。 集成电路包括半导体衬底; 形成在所述半导体基板上的多个材料层,每个所述材料层包括其中的电路图案; 以及形成在多个材料层中并堆叠在相同区域中的多个衍射基周期标记。 基于衍射的周期标记中的一个不同于间距中基于衍射的周期性标记中的至少另一个。

    Method To Improve Mask Critical Dimension Uniformity (CDU)
    34.
    发明申请
    Method To Improve Mask Critical Dimension Uniformity (CDU) 有权
    提高面膜临界尺寸均匀度(CDU)的方法

    公开(公告)号:US20090206057A1

    公开(公告)日:2009-08-20

    申请号:US12031501

    申请日:2008-02-14

    IPC分类号: C23F1/08

    摘要: A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.

    摘要翻译: 公开了一种用于制造衬底的方法和系统。 首先,提供多个处理室,多个处理室中的至少一个适于接收至少一个等离子体过滤板和多个处理室中的至少一个包含等离子体过滤板库。 从等离子体过滤板文库中选择并除去等离子体过滤板。 然后,将等离子体过滤板插入适于接收至少一个等离子体过滤板的多个处理室中的至少一个。 随后,在衬底中进行蚀刻处理。