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35 条记录 (耗时 0.038 秒)

    Method to improve mask critical dimension uniformity (CDU)
    2.
    发明授权
    Method to improve mask critical dimension uniformity (CDU) 有权
    改善掩模临界尺寸均匀性（CDU）的方法

    公开(公告)号：US08609545B2

    公开(公告)日：2013-12-17

    申请号：US12031501

    申请日：2008-02-14

    申请人： I-Hsiung Huang ,  Chi-Lin Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

    发明人： I-Hsiung Huang ,  Chi-Lin Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： G03F1/32 ,  G03F1/36 ,  G03F1/80 ,  H01J37/32422 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67236

    摘要： A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.

    摘要翻译： 公开了一种用于制造衬底的方法和系统。 首先，提供多个处理室，多个处理室中的至少一个适于接收至少一个等离子体过滤板和多个处理室中的至少一个包含等离子体过滤板库。 从等离子体过滤板文库中选择并除去等离子体过滤板。 然后，将等离子体过滤板插入适于接收至少一个等离子体过滤板的多个处理室中的至少一个。 随后，在衬底中进行蚀刻处理。

    Method To Improve Mask Critical Dimension Uniformity (CDU)
    3.
    发明申请
    Method To Improve Mask Critical Dimension Uniformity (CDU) 有权
    提高面膜临界尺寸均匀度（CDU）的方法

    公开(公告)号：US20090206057A1

    公开(公告)日：2009-08-20

    申请号：US12031501

    申请日：2008-02-14

    申请人： I-Hsiung Huang ,  Chi-Lun Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

    发明人： I-Hsiung Huang ,  Chi-Lun Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

    IPC分类号： C23F1/08

    CPC分类号： G03F1/32 ,  G03F1/36 ,  G03F1/80 ,  H01J37/32422 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67236

    摘要： A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.

    摘要翻译： 公开了一种用于制造衬底的方法和系统。 首先，提供多个处理室，多个处理室中的至少一个适于接收至少一个等离子体过滤板和多个处理室中的至少一个包含等离子体过滤板库。 从等离子体过滤板文库中选择并除去等离子体过滤板。 然后，将等离子体过滤板插入适于接收至少一个等离子体过滤板的多个处理室中的至少一个。 随后，在衬底中进行蚀刻处理。

    Semiconductor processing apparatus with simultaneously movable stages
    5.
    发明授权
    Semiconductor processing apparatus with simultaneously movable stages 有权
    半导体处理装置具有同步可动级

    公开(公告)号：US08544317B2

    公开(公告)日：2013-10-01

    申请号：US12576526

    申请日：2009-10-09

    申请人： Yu-Fu Lin ,  Yung-Cheng Chen ,  Heng-Jen Lee ,  Chin-Hsiang Lin

    发明人： Yu-Fu Lin ,  Yung-Cheng Chen ,  Heng-Jen Lee ,  Chin-Hsiang Lin

    IPC分类号： B23Q17/09 ,  G01N19/02

    CPC分类号： H01L21/68785 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70525 ,  G03F7/70725 ,  G03F7/70733 ,  G03F7/70766 ,  H01J37/3174 ,  H01L21/68

    摘要： A method and apparatus provide for simultaneously moving multiple semiconductor wafers in opposite directions while simultaneously performing processing operations on each of the wafers. The semiconductor wafers are orientated in coplanar fashion and are disposed on stages that simultaneously translate in opposite directions to produce a net system momentum of zero. The die of the respective semiconductor wafers are processed in the same spatial sequence with respect to a global alignment feature of the semiconductor wafer. A balance mass is not needed to counteract the motion of a stage because the opposite motions of the respective stages cancel each other.

    摘要翻译： 一种方法和装置提供同时在相反方向上移动多个半导体晶片，同时对每个晶片执行处理操作。 半导体晶片以共面方式取向，并且设置在同时沿相反方向平移的阶段上，以产生零的系统动量。 相对于半导体晶片的全局对准特征，对相应的半导体晶片的管芯进行相同的空间序列处理。 不需要平衡质量来抵消舞台的运动，因为各个舞台的相反运动彼此抵消。

    LITHOGRAPHIC PLANE CHECK FOR MASK PROCESSING
    6.
    发明申请
    LITHOGRAPHIC PLANE CHECK FOR MASK PROCESSING 有权
    用于掩模加工的平版印刷机检查

    公开(公告)号：US20110161893A1

    公开(公告)日：2011-06-30

    申请号：US12976646

    申请日：2010-12-22

    申请人： CHIN-HSIANG LIN ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Chiang Tu ,  Chun-Jen Chen ,  Rick Lai

    发明人： CHIN-HSIANG LIN ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Chiang Tu ,  Chun-Jen Chen ,  Rick Lai

    IPC分类号： G06F17/50

    CPC分类号： G03F1/72 ,  G03F1/86

    摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired.

    摘要翻译： 本公开提供了许多不同的实施例。 示例性方法可以包括提供根据设计图案制造的掩模; 从掩模中提取掩模图案; 将掩模图案转换成渲染的掩模图案，其中模拟设计图案包括设计图案和掩模中的任何缺陷; 使用所渲染的掩模图案来模拟光刻工艺以产生虚拟晶片图案; 以及基于所述虚拟晶片图案确定所述掩模中的任何缺陷是否是关键的。 面罩中的关键缺陷可以修复。

    METHOD AND APPARATUS FOR REDUCING DOWN TIME OF A LITHOGRAPHY SYSTEM
    7.
    发明申请
    METHOD AND APPARATUS FOR REDUCING DOWN TIME OF A LITHOGRAPHY SYSTEM 有权
    降低刻蚀系统下降时间的方法和装置

    公开(公告)号：US20100321660A1

    公开(公告)日：2010-12-23

    申请号：US12486565

    申请日：2009-06-17

    申请人： Jui-Chun Peng ,  Heng-Jen Lee ,  Tung-Li Wu ,  I-Hsiung Huang

    发明人： Jui-Chun Peng ,  Heng-Jen Lee ,  Tung-Li Wu ,  I-Hsiung Huang

    IPC分类号： G03B27/54

    CPC分类号： G03B27/54 ,  G03F7/70033 ,  G03F7/70916 ,  H05G2/005 ,  H05G2/008

    摘要： An apparatus includes a radiation source that emits a radiation beam that causes substantially all of a quantity of material to evaporate; and structure having first and second surface portions, a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion, and a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion. A different aspect involves emitting a radiation beam toward a quantity of material, the radiation beam causing substantially all of the quantity of material to evaporate; operating a structure having first and second surface portions in a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion; and thereafter operating the structure in a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion.

    摘要翻译： 一种装置包括辐射源，辐射源发射基本上所有的一定量物质蒸发的辐射束; 以及具有第一和第二表面部分的结构，第一操作模式，其中更大量的蒸发副产物撞击在第一表面部分上，以及第二操作模式，其中较大量的副产物撞击在第二表面部分上。 不同的方面涉及朝向一定数量的材料发射辐射束，所述辐射束导致基本上所有量的材料蒸发; 在第一操作模式中操作具有第一和第二表面部分的结构，其中更大量的蒸发副产物撞击在第一表面部分上; 然后以第二操作模式操作该结构，其中较大量的副产物撞击在第二表面部分上。

    Enhanced scanner throughput system and method
    9.
    发明授权
    Enhanced scanner throughput system and method 有权
    增强扫描仪吞吐量系统和方法

    公开(公告)号：US08906599B2

    公开(公告)日：2014-12-09

    申请号：US13473695

    申请日：2012-05-17

    申请人： Yu-Mei Liu ,  Chin-Hsiang Lin ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Wei Lin

    发明人： Yu-Mei Liu ,  Chin-Hsiang Lin ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Wei Lin

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70358

    摘要： A method and system to improve scanner throughput is provided. An image from a reticle is projected onto a substrate using a continuous linear scanning procedure in which an entire column of die or cells of die is scanned continuously, i.e. without stepping to a different location. Each scan includes translating a substrate with respect to a fixed beam. While the substrate is translated, the reticle is also translated. When a first die or cell of die is projected onto the substrate, the reticle translates along a direction opposite the scan direction and as the scan continues along the same direction, the reticle then translates in the opposite direction of the substrate thereby forming an inverted pattern on the next die or cell. The time associated with exposing the substrate is minimized as the stepping operation only occurs after a complete column of cells is scanned.

    摘要翻译： 提供了一种提高扫描仪吞吐量的方法和系统。 使用连续线性扫描程序将来自掩模版的图像投影到基板上，其中连续扫描整列管芯或裸片的单元，即不进入不同的位置。 每个扫描包括相对于固定光束平移衬底。 当底物被翻译时，掩模版也被翻译。 当模具的第一裸片或裸片投影到衬底上时，标线沿着与扫描方向相反的方向平移，并且随着扫描沿着相同的方向继续，标线片然后沿着衬底的相反方向平移，从而形成倒置图案 在下一个死亡或细胞。 与曝光底物相关的时间最小化，因为步进操作仅在扫描完整的单元格列之后才发生。