摘要:
The liquid crystal display device performs display by changing the number of gray scales depending on external light intensity, and switches the display mode in accordance with a content to be displayed on a display. By controlling a display mode-specific video signal generation circuit depending on external light intensity, an inputted video signal is outputted as an analog value, is outputted with a digital value of a binary, or is outputted with a multiple digital value. As a result, display gradation of a pixel changes timely. Accordingly, a clear image can be displayed. For example, a display device which secures visibility can be obtained in a wide range from under fluorescent light in a dark place or indoor to under outdoor sunlight.
摘要:
To provide a constitution capable of reducing production cost in a semiconductor device for display of a type integrally formed with a drive circuit with a digital signal as an input signal and a pixel matrix unit, a signal dividing circuit is formed on a substrate where drive circuits and a pixel matrix unit are to be formed simultaneously with the drive circuits and the pixel matrix unit in view of fabrication steps by which fabrication steps of the signal dividing circuit per se and steps required for connecting the signal dividing circuit to wirings on the substrate can be dispensed with without adding further steps.
摘要:
The brightness of a light emitting element varies when changes in ambient temperature or changes with time occur. In view of this, the invention provides a display device where the influence of variations in the current value of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention includes a monitoring element that is driven with a constant current, and a voltage applied to the monitoring element is detected and inputted to a light emitting element. In other words, the monitoring element is driven with a low current, and a voltage applied to the monitoring element is inputted to the light emitting element such that the light emitting element is driven with a constant current.
摘要:
Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse nickel element which is concentrated locally. After that, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Then, the thermal oxide film 106 is removed. Thereby, a crystalline silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.
摘要:
A display device is reduced in size. Wiring lines are formed in a portion of a pixel substrate which is covered with a sealing member. The width of each of the wiring lines is set to a width that allows the sealing member on the wiring lines sufficient exposure to ultraviolet rays when the sealing member is irradiated with ultraviolet rays through the wiring lines. Instead of using one wide wiring line, a plurality of wiring lines each having a small width are connected in parallel to one another. The area the wiring lines around a pixel portion and a driving circuit occupy and the area the sealing member occupies are thus reduced in the display device, whereby the display device can be made smaller.
摘要:
There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.
摘要:
Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel element to an amorphous silicon film 103. Then, after obtaining the crystal silicon film, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Next, the thermal oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystalinity can be obtained.
摘要:
A light emitting device capable of suppressing drop in luminance or luminance unevenness of a light emitting element due to deterioration of an electro luminescent material and capable of switching an image direction vertically to horizontally without a frame memory additionally provided. The light emitting device of the invention comprises in each pixel first to fourth transistors, a light emitting element, and a signal line. The first transistor and the second transistor control the connection between the signal line and a gate of the third transistor, the fourth transistor controls a current value supplied to the light emitting element, and the third transistor selects whether the current is supplied to the light emitting element or not. Further, the first transistor and the second transistor are switched separately.
摘要:
A light emitting element has a property that a resistance value (internal resistance value) thereof changes according to the ambient temperature. Specifically, assuming that the room temperature is a normal temperature, when the ambient temperature becomes higher than the normal temperature, a resistance value is decreased, and when the ambient temperature becomes lower than the normal temperature, a resistance value is increased. Therefore, when the ambient temperature changes or degradation is caused with time due to the aforementioned property of the light emitting element, luminance varies. The invention provides a display device where an effect of current fluctuation of a light emitting element, which is caused by the change in ambient temperature and degradation with time, is suppressed. The display device comprises a monitoring element, to which a current is supplied from a current source. A voltage applied to the monitoring element is applied to a light emitting element.
摘要:
The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.