公开(公告)号：US20110176762A1

公开(公告)日：2011-07-21

申请号：US13120625

申请日：2009-11-10

Applicant: Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

Inventor： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

IPC: G02F1/025 ,  B05D5/12

CPC classification number: G02F1/025 ,  G02F2001/0152

Abstract: An optical modulator is formed with at least a portion of a semiconductor layer (8) that has undergone a doping process to exhibit a first conductivity and at least a portion of a semiconductor layer (9) that has undergone a doping process to exhibit a second conductivity overlapping with a dielectric layer (11) interposed. The surface of the semiconductor layer (8) of first conductivity has an uneven form in the portion in which the semiconductor layer (8) that exhibits first conductivity and the semiconductor layer (9) that exhibits second conductivity overlap with the dielectric layer (11) interposed. The dielectric layer (11) is formed on the semiconductor layer (8) of first conductivity that has the uneven form, and the semiconductor layer (9) of second conductivity is formed on the dielectric layer (11).

Abstract translation: 光调制器形成有至少部分已经经历掺杂工艺以显示第一导电性的半导体层（8）的至少一部分，以及已经经历掺杂工艺的半导体层（9）的至少一部分以显示第二导电性 导电性与介电层（11）重叠。 在具有第一导电性的半导体层（8）和表现出第二导电性的半导体层（9）与电介质层（11）重叠的部分中，第一导电性半导体层（8）的表面具有凹凸形状， 插入。 电介质层（11）形成在具有不平坦形状的第一导电性半导体层（8）上，并且在电介质层（11）上形成第二导电性半导体层（9）。

公开(公告)号：US20110012221A1

公开(公告)日：2011-01-20

申请号：US12919638

申请日：2009-03-09

Applicant: Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

Inventor： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

IPC: H01L31/105

CPC classification number: H01L31/105 ,  G02B6/12004 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

Abstract: The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.

Abstract translation: Ge层与Si层之间的晶格失配大至4％左右。 因此，当Ge层在Si层上生长时，引入穿透位错以在p-i-n结处引起漏电流。 因此，光检测灵敏度降低，并且元件的可靠性也降低。 此外，在与Si波导的连接中，还存在由于Si和Ge之间的折射率的差异以及由金属电极引起的吸收损耗的反射损耗的问题。 为了解决所述问题，根据本发明，提供了一种垂直型pin-SiGe光电二极管，其具有嵌入到形成在Si层的一部分中的凹槽中的结构，其中p型或n- 在沟槽的下部形成有型掺杂层，其中在通过层叠i-Si层和SiGe缓冲层而形成的层叠结构上形成具有矩形或倒锥形的i-SiGe层 凹槽的下部和侧壁。 此外，在具有Si波导的光学连接部中，通过由i-Si层和SiGe缓冲层构成的层叠结构实现阻抗匹配，并且将上部金属层与其分离，使得多Si桥结构 用于将上部金属层电连接到其上。

公开(公告)号：US20100119192A1

公开(公告)日：2010-05-13

申请号：US12598162

申请日：2008-04-30

Applicant: Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

Inventor： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

IPC: G02B6/12 ,  H01L31/0232

CPC classification number: H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

Abstract: In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

Abstract translation: 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ至λ[λ：通过光波导路径芯透射的光的波长]的间隔布置。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

公开(公告)号：US20060261324A1

公开(公告)日：2006-11-23

申请号：US10543649

申请日：2003-12-22

Applicant: Jun Ushida ,  Hiroshito Yamada

Inventor： Jun Ushida ,  Hiroshito Yamada

IPC: H01L31/00 ,  H01L29/06

CPC classification number: G02F1/365 ,  G02F1/3515 ,  G02F2202/32

Abstract: In an optical circuit including multi-dimensional photonic crystals, in which the optical circuit has a structure (33), such as a light emitting member or a light receiving member, having a natural resonance frequency, another structure (34) having a natural resonance frequency slightly differing from the natural resonance frequency of the structure (33) is arranged in the vicinity of the structure (33) to control the directivity of localization and propagation of an electromagnetic field, light emission and light reception in a spatial region including the above structures in the multi-dimensional photonic crystals, in order to permit functional operations to be realized.

Abstract translation: 在包括多维光子晶体的光电路中，其中光电路具有具有天然共振频率的诸如发光部件或光接收部件的结构（33），具有天然共振的另一结构（34） 与结构（33）的固有谐振频率稍微不同的频率被布置在结构（33）附近，以控制在包括上述的空间区域中的电磁场，发光和光接收的定位和传播的方向性 多维光子晶体中的结构，以便实现功能操作。