公开(公告)号：US08936962B2

公开(公告)日：2015-01-20

申请号：US13256087

申请日：2010-02-15

申请人： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

发明人： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

IPC分类号： H01L27/15 ,  G02F1/025 ,  G02F1/225

CPC分类号： G02F1/025 ,  G02F1/2257

摘要： An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivity type. Further, in the optical modulator, at least the first conductivity type semiconductor layer, a dielectric layer, the second conductivity type semiconductor layer, and a transparent electrode optically transparent in at least a near-infrared wavelength region are laminated in order.

摘要翻译： 根据本发明的光调制器至少由经受掺杂工艺的半导体层构成以呈现第一导电类型，以及经受掺杂工艺以显示第二导电类型的半导体层。 此外，在光调制器中，依次层叠至少第一导电型半导体层，电介质层，第二导电型半导体层和在至少近红外波长区域中透光的透明电极。

公开(公告)号：US20120003767A1

公开(公告)日：2012-01-05

申请号：US13256087

申请日：2010-02-15

申请人： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

发明人： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

IPC分类号： G02F1/025 ,  H01L33/00

CPC分类号： G02F1/025 ,  G02F1/2257

摘要： An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivity type. Further, in the optical modulator, at least the first conductivity type semiconductor layer, a dielectric layer, the second conductivity type semiconductor layer, and a transparent electrode optically transparent in at least a near-infrared wavelength region are laminated in order.

摘要翻译： 根据本发明的光调制器至少由经受掺杂工艺的半导体层构成以呈现第一导电类型，以及经受掺杂工艺以显示第二导电类型的半导体层。 此外，在光调制器中，依次层叠至少第一导电型半导体层，电介质层，第二导电型半导体层和在至少近红外波长区域中透光的透明电极。

公开(公告)号：US20110176762A1

公开(公告)日：2011-07-21

申请号：US13120625

申请日：2009-11-10

申请人： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

发明人： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

IPC分类号： G02F1/025 ,  B05D5/12

CPC分类号： G02F1/025 ,  G02F2001/0152

摘要： An optical modulator is formed with at least a portion of a semiconductor layer (8) that has undergone a doping process to exhibit a first conductivity and at least a portion of a semiconductor layer (9) that has undergone a doping process to exhibit a second conductivity overlapping with a dielectric layer (11) interposed. The surface of the semiconductor layer (8) of first conductivity has an uneven form in the portion in which the semiconductor layer (8) that exhibits first conductivity and the semiconductor layer (9) that exhibits second conductivity overlap with the dielectric layer (11) interposed. The dielectric layer (11) is formed on the semiconductor layer (8) of first conductivity that has the uneven form, and the semiconductor layer (9) of second conductivity is formed on the dielectric layer (11).

摘要翻译： 光调制器形成有至少部分已经经历掺杂工艺以显示第一导电性的半导体层（8）的至少一部分，以及已经经历掺杂工艺的半导体层（9）的至少一部分以显示第二导电性 导电性与介电层（11）重叠。 在具有第一导电性的半导体层（8）和表现出第二导电性的半导体层（9）与电介质层（11）重叠的部分中，第一导电性半导体层（8）的表面具有凹凸形状， 插入。 电介质层（11）形成在具有不平坦形状的第一导电性半导体层（8）上，并且在电介质层（11）上形成第二导电性半导体层（9）。

公开(公告)号：US08467637B2

公开(公告)日：2013-06-18

申请号：US12598162

申请日：2008-04-30

申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

IPC分类号： G02B6/12 ,  G02B6/26 ,  H01L29/47

CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

公开(公告)号：US20110311178A1

公开(公告)日：2011-12-22

申请号：US13202680

申请日：2010-02-18

申请人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

发明人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC分类号： G02F1/025

CPC分类号： G02F1/025

摘要： The components are a lower clad layer (102), a first silicon layer (103) that is formed on the lower clad layer (102) as a single body made of silicon of a first conduction type and has a slab region (105) that is disposed at a core (104) and on both sides of the core (104) and connects to the core, a concave section (104a) that is formed in the top surface of the core (104), and a second silicon layer (109) of a second conduction type that is formed inside the concave section (104a) with an intervening dielectric layer (108) to fill the inside of the concave section (104a).

摘要翻译： 这些部件是下包层（102），第一硅层（103），其形成在下包层（102）上，作为由第一导电类型的硅制成的单体，并具有板区域（105） 设置在芯部（104）处并且在芯部（104）的两侧并且连接到芯部，形成在芯部（104）的顶表面中的凹部（104a）和第二硅层（ 109），其形成在所述凹部（104a）的内部，并具有填充所述凹部（104a）的内部的中间介电层（108）。

公开(公告)号：US20110002582A1

公开(公告)日：2011-01-06

申请号：US12919461

申请日：2009-02-10

申请人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

发明人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

IPC分类号： G02B6/12 ,  H01L21/02

CPC分类号： H01L25/0657 ,  H01L23/48 ,  H01L23/645 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/167 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/41 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.

摘要翻译： 提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。 半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有 功能与光和电之间的信号转换有关。 半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。

公开(公告)号：US20130064491A1

公开(公告)日：2013-03-14

申请号：US13582841

申请日：2011-03-01

申请人： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

发明人： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

IPC分类号： G02F1/035 ,  H01L21/02

CPC分类号： G02F1/035 ,  G02F1/025 ,  H01L21/02

摘要： To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.

摘要翻译： 提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。 光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层 放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。

公开(公告)号：US08363989B2

公开(公告)日：2013-01-29

申请号：US12919461

申请日：2009-02-10

申请人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

发明人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

IPC分类号： G02B6/12 ,  H01L21/02

CPC分类号： H01L25/0657 ,  H01L23/48 ,  H01L23/645 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/167 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/41 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.

摘要翻译： 提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。 半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有 功能与光和电之间的信号转换有关。 半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。

公开(公告)号：US20100320496A1

公开(公告)日：2010-12-23

申请号：US12919546

申请日：2009-02-26

申请人： Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

发明人： Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

IPC分类号： H01L33/62

CPC分类号： G02B6/12002 ,  G02B6/43 ,  H01L21/76898 ,  H01L23/481 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/80001 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.

摘要翻译： 半导体器件包括具有用于处理电信号的半导体集成电路的半导体层，半导体衬底和用于发射光信号的光互连层的半导体层。 通过来自半导体层的电信号执行在光学互连层中发送的光信号的调制的控制，并且通过在光学互连层中的光的接收而产生的电信号被传输到半导体层。 光学互连层设置在半导体衬底的下侧。

公开(公告)号：US09002144B2

公开(公告)日：2015-04-07

申请号：US13395329

申请日：2010-06-08

申请人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

发明人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC分类号： G02F1/035 ,  G02F1/225 ,  G02F1/025 ,  G02F1/015

CPC分类号： G02F1/2257 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/105

摘要： A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.

摘要翻译： 提供了一种小型化的低功率电光调制器，其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。 电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导，并且半导体层8和9可连接到 分别经由高掺杂部分4和10的外部端子。 在具有电介质膜11的半导体层8和9的接触表面附近的区域中，通过来自外部端子的电信号累积，去除或反转自由载流子，并且由此使自由载流子的浓度 调制光信号的电场区域，使得可以调制光信号的相位。 半导体层8和9中的至少一个比层叠部分宽。 高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。