Frequency conversion using stacked strontium tetraborate plates

    公开(公告)号:US11543732B2

    公开(公告)日:2023-01-03

    申请号:US17553705

    申请日:2021-12-16

    Abstract: An optical element includes Strontium tetraborate SrB4O7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency converting stage of a laser assembly to generate laser output light having a wavelength in the range of 125 nm to 183 nm. One or more fundamental light beams having fundamental wavelengths between 1 and 1.1 μm are doubled and/or summed using multiple intermediate frequency conversion stages to generate one or more intermediate light beam frequencies (e.g., second through eighth harmonics, or sums thereof), and then the final frequency converting stage utilizes the optical element to either double a single intermediate light beam frequency or to sum two intermediate light beam frequencies to generate the desired laser output light at high power and photon energy levels. A method and inspection system incorporating the laser assembly is also described.

    Strontium tetraborate as optical coating material

    公开(公告)号:US11360032B2

    公开(公告)日:2022-06-14

    申请号:US17144475

    申请日:2021-01-08

    Abstract: Strontium tetraborate is used as an optical coating material for optical components utilized in semiconductor inspection and metrology systems to take advantage of its high refractive indices, high optical damage threshold and high microhardness in comparison to conventional optical materials. At least one layer of strontium tetraborate is formed on the light receiving surface of an optical component's substrate such that its thickness serves to increase or decrease the reflectance of the optical component. One or multiple additional coating layers may be placed on top of or below the strontium tetraborate layer, with the additional coating layers consisting of conventional optical materials. The thicknesses of the additional layers may be selected to achieve a desired reflectance of the optical component at specific wavelengths. The coated optical component is used in an illumination source or optical system utilized in a semiconductor inspection system, a metrology system or a lithography system.

    Sensitive particle detection with spatially-varying polarization rotator and polarizer

    公开(公告)号:US11243175B2

    公开(公告)日:2022-02-08

    申请号:US17175179

    申请日:2021-02-12

    Abstract: A system may include illumination optics to direct an illumination beam to a sample at an off-axis angle, collection optics to collect scattered light from the sample, and a phase mask located at a first pupil plane to provide different phase shifts for light in two or more pupil regions of a collection area to reshape a point spread function of light scattered from one or more particles on a surface of the sample. The system may further include a polarization rotator located at a second pupil plane, where the polarization rotator provides a spatially-varying polarization rotation angle selected to rotate light scattered from the surface of the sample to a selected polarization angle, a polarizer to reject light polarized along the selected polarization angle, and a detector to generate a dark-field image of the sample based on light passed by the polarizer.

    Arrayed column detector
    34.
    发明授权

    公开(公告)号:US11239048B2

    公开(公告)日:2022-02-01

    申请号:US16812720

    申请日:2020-03-09

    Abstract: An electron beam inspection system is disclosed, in accordance with one or more embodiments of the present disclosure. The inspection system may include an electron beam source configured to generate one or more primary electron beams. The inspection system may also include an electron-optical column including a set of electron-optical elements configured to direct the one or more primary electron beams to a sample. The inspection system may further include a detection assembly comprising: a scintillator substrate configured to collect electrons emanating from the sample, the scintillator substrate configured to generate optical radiation in response to the collected electrons; one or more light guides; one or more reflective surfaces configured to receive the optical radiation and direct the optical radiation along the one or more light guides; and one or more detectors configured to receive the optical radiation from the light guide.

    Frequency conversion using stacked strontium tetraborate plates

    公开(公告)号:US11237455B2

    公开(公告)日:2022-02-01

    申请号:US17239561

    申请日:2021-04-24

    Abstract: A nonlinear crystal including stacked Strontium tetraborate SrB4O7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency converting stage of a laser assembly to generate laser output light having a wavelength in the range of 125 nm to 183 nm. One or more fundamental light beams having fundamental wavelengths between 1 and 1.1 μm are doubled and/or summed using multiple intermediate frequency conversion stages to generate one or more intermediate light beam frequencies (e.g., second through eighth harmonics, or sums thereof), and then the final frequency converting stage utilizes the nonlinear crystal to either double a single intermediate light beam frequency or to sum two intermediate light beam frequencies to generate the desired laser output light at high power and photon energy levels. A method and inspection system incorporating the laser assembly is also described.

    Arrayed Column Detector
    36.
    发明申请

    公开(公告)号:US20210280386A1

    公开(公告)日:2021-09-09

    申请号:US16812720

    申请日:2020-03-09

    Abstract: An electron beam inspection system is disclosed, in accordance with one or more embodiments of the present disclosure. The inspection system may include an electron beam source configured to generate one or more primary electron beams. The inspection system may also include an electron-optical column including a set of electron-optical elements configured to direct the one or more primary electron beams to a sample. The inspection system may further include a detection assembly comprising: a scintillator substrate configured to collect electrons emanating from the sample, the scintillator substrate configured to generate optical radiation in response to the collected electrons; one or more light guides; one or more reflective surfaces configured to receive the optical radiation and direct the optical radiation along the one or more light guides; and one or more detectors configured to receive the optical radiation from the light guide.

    STRONTIUM TETRABORATE AS OPTICAL COATING MATERIAL

    公开(公告)号:US20210131978A1

    公开(公告)日:2021-05-06

    申请号:US17144475

    申请日:2021-01-08

    Abstract: Strontium tetraborate is used as an optical coating material for optical components utilized in semiconductor inspection and metrology systems to take advantage of its high refractive indices, high optical damage threshold and high microhardness in comparison to conventional optical materials. At least one layer of strontium tetraborate is formed on the light receiving surface of an optical component's substrate such that its thickness serves to increase or decrease the reflectance of the optical component. One or multiple additional coating layers may be placed on top of or below the strontium tetraborate layer, with the additional coating layers consisting of conventional optical materials. The thicknesses of the additional layers may be selected to achieve a desired reflectance of the optical component at specific wavelengths. The coated optical component is used in an illumination source or optical system utilized in a semiconductor inspection system, a metrology system or a lithography system.

    Back-Illuminated Sensor With Boron Layer Deposited Using Plasma Atomic Layer Deposition

    公开(公告)号:US20240313032A1

    公开(公告)日:2024-09-19

    申请号:US18671172

    申请日:2024-05-22

    CPC classification number: H01L27/14698 G03F7/70033 H01L27/1464

    Abstract: Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.

    Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer

    公开(公告)号:US11848350B2

    公开(公告)日:2023-12-19

    申请号:US17197292

    申请日:2021-03-10

    CPC classification number: H01L27/14687 H01L27/1464 H01L27/14806

    Abstract: An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.

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