公开(公告)号：US06893905B2

公开(公告)日：2005-05-17

申请号：US10180847

申请日：2002-06-26

Applicant: Kanwal K. Raina ,  David H. Wells

Inventor： Kanwal K. Raina ,  David H. Wells

IPC: C23C14/00 ,  C23C14/18 ,  H01L21/285 ,  H01L21/3205 ,  H01L29/45 ,  H01L29/49 ,  H01L21/00 ,  H01L21/44 ,  H01L21/4763 ,  H01L29/40

CPC classification number: C23C14/185 ,  C23C14/0057 ,  H01L21/2855 ,  H01L21/32051 ,  H01L29/458 ,  H01L29/4908 ,  Y10S438/937

Abstract: An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.

Abstract translation: 在膜内具有氧含量的含铝膜。 在铝或铝合金溅射沉积到半导体衬底上时，通过将氢气和氧气与氩气一起引入溅射沉积真空室中形成含铝膜。 这样形成的含铝膜与纯铝相比具有低电阻率，较低的粗糙度，良好的机械强度和较低的残余应力。

公开(公告)号：US06537427B1

公开(公告)日：2003-03-25

申请号：US09243942

申请日：1999-02-04

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: C23C1500

CPC classification number: H01J3/022

Abstract: This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 &mgr;&OHgr;-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.

公开(公告)号：US06461211B2

公开(公告)日：2002-10-08

申请号：US09888125

申请日：2001-06-22

Applicant: Kanwal K. Raina ,  Ammar Derraa

Inventor： Kanwal K. Raina ,  Ammar Derraa

IPC: H01J924

CPC classification number: H01J1/3044 ,  H01J9/025

Abstract: In one aspect, an electron emission device comprises a substrate, and a first layer supported by the substrate. The first layer comprises a conductive material. The electron emission display device further comprises an electron emission tip electrically connected with the first layer, and a second layer electrically disposed between the first layer and the electron emission tip. The second layer comprises microcrystalline silicon. In another aspect, the invention encompasses a method of forming an electron emission device. A substrate is provided, and a conductive layer is formed over the substrate. A microcrystalline-silicon-containing layer is formed over the conductive layer, and a resistor layer is formed over the microcrystalline-silicon-containing layer. An emitter tip is formed over the resistor layer. In yet other aspects, the invention encompasses field emission display devices, and methods of forming field emission display devices.

Abstract translation: 一方面，电子发射器件包括衬底和由衬底支撑的第一层。 第一层包括导电材料。 电子发射显示装置还包括与第一层电连接的电子发射尖端，以及电气设置在第一层和电子发射尖端之间的第二层。 第二层包括微晶硅。 另一方面，本发明包括形成电子发射装置的方法。 提供衬底，并且在衬底上形成导电层。 在导电层上形成微晶硅层，在微晶硅层上形成电阻层。 发射极尖端形成在电阻层上。 在其它方面，本发明包括场发射显示装置，以及形成场致发射显示装置的方法。

公开(公告)号：US06455939B1

公开(公告)日：2002-09-24

申请号：US09570879

申请日：2000-05-15

Applicant: Kanwal K. Raina ,  David H. Wells

Inventor： Kanwal K. Raina ,  David H. Wells

IPC: H01L2312

CPC classification number: C23C14/185 ,  C23C14/0057 ,  H01L21/2855 ,  H01L21/32051 ,  H01L29/458 ,  H01L29/4908 ,  Y10S438/937

Abstract: An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.

公开(公告)号：US06425791B1

公开(公告)日：2002-07-30

申请号：US09652746

申请日：2000-08-31

Applicant: Kanwal K. Raina ,  James J. Alwan

Inventor： Kanwal K. Raina ,  James J. Alwan

IPC: H01J902

CPC classification number: H01J1/3044 ,  H01J31/127 ,  H01J2201/30403

Abstract: A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.

Abstract translation: 公开了一种场致发射器件，其具有位于下面的阴极导电层和上覆电阻层之间的缓冲层。 缓冲层由基本上未掺杂的非晶硅组成。 延伸通过电阻层的任何针孔缺陷或不连续性终止于缓冲层，从而防止由针孔缺陷引起的问题。 特别地，缓冲层防止了电阻层的破坏，从而降低了短路的可能性。 缓冲层进一步降低了由后续处理步骤引起的各种层的分层或其它不规则的风险。 还公开了制造和使用具有缓冲层的场致发射器件的方法。

公开(公告)号：US06222271B1

公开(公告)日：2001-04-24

申请号：US08892930

申请日：1997-07-15

Applicant: Kanwal K. Raina ,  David H. Wells

Inventor： Kanwal K. Raina ,  David H. Wells

IPC: H01L2345

CPC classification number: H01L21/2855 ,  C23C14/0057 ,  C23C14/185 ,  H01L21/32051 ,  H01L29/458 ,  H01L29/4908 ,  Y10S438/937 ,  Y10T428/12229

Abstract: Aluminum containing films having an oxygen content within the films. The aluminum-containing film is formed by introducing hydrogen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.

Abstract translation: 含有膜中的氧含量的含铝膜。 在铝或铝合金溅射沉积到半导体衬底上时，通过将氢气与氩气一起引入溅射沉积真空室中形成含铝膜。 这样形成的含铝膜与纯铝相比具有低电阻率，较低的粗糙度，良好的机械强度和较低的残余应力。

公开(公告)号：US6137214A

公开(公告)日：2000-10-24

申请号：US431015

申请日：1999-11-01

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: H01J3/02 ,  H01J9/02 ,  H01J31/12 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J31/127 ,  H01J9/025

Abstract: A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors, telecommunications devices, and the like.

Abstract translation: 一种场致发射器件，具有其中纳米晶体或微晶硅层位于二氧化硅电介质层上方的栅电极结构。 还公开了形成场发射装置的方法。 纳米晶体或微晶硅层与电介质层形成结合，其足够强以防止在形成场致发射器件期间进行的化学 - 机械平面化操作期间的分层。 纳米晶体或微晶硅层通过PECVD在含有硅烷和氢气的气氛中以约1:15至约1:40的比例沉积。 可以形成多个场致发射器件并将其包括在用于计算机监视器，电信设备等的平板显示器中。

公开(公告)号：US6064149A

公开(公告)日：2000-05-16

申请号：US027528

申请日：1998-02-23

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: H01J3/02 ,  H01J9/02 ,  H01J31/12 ,  H01J19/00

CPC classification number: H01J3/022 ,  H01J31/127 ,  H01J9/025

Abstract: A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors telecommunications devices, and the like.

Abstract translation: 一种场致发射器件，具有其中纳米晶体或微晶硅层位于二氧化硅电介质层上方的栅电极结构。 还公开了形成场发射装置的方法。 纳米晶体或微晶硅层与电介质层形成结合，其足够强以防止在形成场致发射器件期间进行的化学 - 机械平面化操作期间的分层。 纳米晶体或微晶硅层通过PECVD在含有硅烷和氢气的气氛中以约1:15至约1:40的比例沉积。 可以形成多个场致发射器件并将其包括在用于计算机监视器电信设备的平板显示器等中。

公开(公告)号：US6015323A

公开(公告)日：2000-01-18

申请号：US775964

申请日：1997-01-03

Applicant: Behnam Moradi ,  Kanwal K. Raina ,  Michael J. Westphal

Inventor： Behnam Moradi ,  Kanwal K. Raina ,  Michael J. Westphal

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: Improved field emission display includes a buffer layer of copper, aluminum, silicon nitride or doped or undoped amorphous, poly, or microcrystalline silicon located between a chromium gate electrode and associated dielectric layer in a cathode assembly. The buffer layer substantially reduces or eliminates the occurrence of an adverse chemical reaction between the chromium gate electrode and dielectric layer.

Abstract translation: 改进的场致发射显示器包括位于阴极组件中的铬栅电极和相关介电层之间的铜，铝，氮化硅或掺杂或未掺杂的非晶，多晶或微晶硅的缓冲层。 缓冲层基本上减少或消除了铬栅电极和电介质层之间不利的化学反应的发生。