摘要:
A solid-state imaging device includes a photodetecting section including pixels each including a transistor and a photodiode, readout wiring lines connected to the transistors, a signal output section for sequentially outputting voltage values according to the amounts of charges input through the respective readout wiring lines, potential change switches for switching the potentials of the readout wiring lines to a potential Vdr different from input potentials of integration circuits of the signal output section, and a controlling section. The controlling section switches potentials of the readout wiring lines to the different potential Vdr for a predetermined period included in a period, after an elapse of a readout period where voltage values corresponding to the amounts of charges generated in the pixels are sequentially output from the signal output section, until a next readout period is started.
摘要:
Charges accumulated in pixels contained in one or a plurality of readout object rows that form a partial region of a photodetecting region are selectively read out in each of the L times (L is an integer not less than 2) of imaging frames, and in each of the L times of imaging frames, resetting of charges accumulated in pixels contained in only a part of non-readout object rows is performed, as well as, resetting is performed at least once in a period of the L times of imaging frames for each of the two or more non-readout object rows. Accordingly, a control method for a solid-state imaging element capable of reducing the time required per one imaging frame and reducing load on the peripheral circuit when selectively reading out charges accumulated in pixels in a partial region of the photodetecting region is realized.
摘要:
A controlling section causes a charge of a photodiode to be output to an integration circuit by bringing a readout switch into a connected state, and then brings the readout switch into a non-connected state. Thereafter, a voltage value is output to a holding circuit from the integration circuit. After carrying out the output operation mentioned above, an operation for causing a charge held in an integrating capacitive element to be discharged, and bringing the readout switch into a connected state to cause a charge held in the photodiode to be discharged and an operation for causing voltage values held in the holding circuits to be sequentially output are carried out in parallel. Accordingly, a solid-state imaging device and a method of driving it capable of solving the problems due to a memory effect, a delay effect, and switching noise are realized.
摘要:
A solid-state image pickup apparatus 1A includes a photodetecting section 10A and a signal readout section 20 etc. In the photodetecting section 10A, M×N pixel units P1,1 to PM,N are arrayed in M rows and N columns. When in a first imaging mode, a voltage value according to an amount of charges generated in a photodiode of each of the M×N pixel units in the photodetecting section 10A is output from the signal readout section 20. When in a second imaging mode, a voltage value according to an amount of charges generated in the photodiode of each pixel unit included in consecutive M1 rows in the photodetecting section 10A is output from the signal readout section 20. When in the second imaging mode than when in the first imaging mode, the readout pixel pitch in frame data is smaller, the frame rate is higher, and the gain being a ratio of an output voltage value to an input charge amount in the signal readout section 20 is greater.
摘要:
A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels 11 having respective photodiodes, the pixels being two-dimensionally arrayed in M rows and N columns; N readout lines disposed for the respective columns and connected with the photodiodes PD included in the pixels of a respective columns via readout switches; a signal output section for outputting a voltage value according to an amount of charge input through each of the readout lines; and a vertical shift register for controlling an opening and closing operation of the readout switch for each of the rows. A contour between one side along a row direction of the light receiving section and a pair of sides along a column direction has a stepped shape. A dummy photodiode region is formed along the stepped contour of the light receiving section.
摘要:
The present invention relates to a solid-state imaging device, etc., which makes it possible to obtain an image with higher resolution by properly correcting pixel data even when any one of row selecting wirings is disconnected. A solid-state imaging device (1) comprises a photodetecting section (10), a signal reading-out section (20), a controlling section (30), and a correction processing section (40). In the photodetecting section (10), M×N pixel portions P1,1 to PM,N are two-dimensionally arrayed in a matrix of M rows and N columns, and each of the pixel portions P1,1 to PM,N includes a photodiode and a reading-out switch. Charges generated in each pixel portion Pm,n are inputted into an integrating circuit Sn through a reading-out wiring LO,n, and a voltage value corresponding to the amount of charges is outputted from the integrating circuit Sn. The voltage value from the integrating circuit Sn is outputted to an output wiring Lout through a holding circuit Hn. In the correction processing section (40), correction processing is applied to frame data repeatedly outputted from the signal reading-out section (20), and the frame data after correction is outputted.
摘要:
A solid-state imager has a structure for capturing a high-resolution image even if any of the read wiring and the column-selection wiring is disconnected. The solid-state imager (1) comprises a light-receiving part (10) having MN pixel portions (P1,1 to PM,N) two-dimensionally arrayed in a matrix of M lines and N columns. The pixel portion (Pm,n) of the light-receiving part (10) includes a photodiode (PD) producing charge the amount of which corresponds to the intensity of the incident light and a read switch (SW1) connected to the photodiode (PD). The pixel portion (Pm,n) occupies a generally square area, and most of the area is the area of the photodiode (PD). A field-effect transistor serving as the read switch (SW1) is fabricated in one corner of the area. A channel CD stopper (CS) is continuously formed in every area sandwiched by pixel portions. A dummy photodiode (PD1) is so fabricated as to be surrounded by the channel stopper (CS) in any area surrounded by any 22 pixel portions adjacent to one another.
摘要:
A solid state imaging device 1 includes a photodetecting section including M×N pixel portions P1,1 to PM,N two-dimensionally arrayed in M rows and N columns, a signal readout section including integrating circuits S1 to SN and holding circuits H1 to HN, and an initialization section including initialization switches SWI,1 to SWI,N. In response to a discharging control signal Reset, discharge switches SW2 in the integrating circuits Sn are temporarily closed and then opened, and thereafter, in response to an m-th row selecting control signal Vsel(m), the readout switches SW1 of the pixel portions Pm,n of the m-th row are closed for a first period. In this first period, in response to a hold control signal Hold, the input switches SW31 of the holding circuits Hn are switched from a closed state to an open state, and thereafter, in response to an initializing control signal Init, the initialization switches SWI,n are closed for a second period.
摘要:
For a solid-state image pickup device 1, a plurality of pixels are two dimensionally arranged in an imaging region 10, and two photodiodes PD1 and PD2 are included in each pixel Pm,n. An electric charge generated in the respective photodiodes PD1 and PD2 is input to a signal readout section 20, and a voltage according to an electric charge amount thereof is output from the signal output section 20. The voltage output from the signal readout section 20 is input to an A/D converting section 40, and a digital value according to the input voltage is output from the A/D converting section 40. In an adding section 50, a sum of digital values to be output from the A/D converting section 40 according to the amount of electric charge generated, for each pixel Pm,n of the imaging region 10, in the two respective photodiodes PD1 and PD2 included in the pixel is operated, and a digital value being a sum value thereof is output.
摘要:
Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.