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1.发明授权Solid-state imaging device including signal connecting section and solid-state imaging device driving method 有权固态成像装置包括信号连接部分和固态成像装置的驱动方法公开(公告)号：US09225924B2
公开(公告)日：2015-12-29
申请号：US13979052
申请日：2011-12-07
申请人： Ryuji Kyushima , Kazuki Fujita , Harumichi Mori
发明人： Ryuji Kyushima , Kazuki Fujita , Harumichi Mori
CPC分类号： H04N5/378 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H04N5/32 , H04N5/3597 , H04N5/374
摘要： A controlling section causes a charge of a photodiode to be output to an integration circuit by bringing a readout switch into a connected state, and then brings the readout switch into a non-connected state. Thereafter, a voltage value is output to a holding circuit from the integration circuit. After carrying out the output operation mentioned above, an operation for causing a charge held in an integrating capacitive element to be discharged, and bringing the readout switch into a connected state to cause a charge held in the photodiode to be discharged and an operation for causing voltage values held in the holding circuits to be sequentially output are carried out in parallel. Accordingly, a solid-state imaging device and a method of driving it capable of solving the problems due to a memory effect, a delay effect, and switching noise are realized.
摘要翻译： 控制部分通过使读出开关处于连接状态，使光电二极管的电荷输出到积分电路，然后使读出开关进入非连接状态。 此后，从积分电路向保持电路输出电压值。 在执行上述输出操作之后，将保持在积分电容元件中的电荷放电的操作，并且使读出开关处于连接状态以使得保持在光电二极管中的电荷被放电，以及引起 保持在顺序输出的保持电路中的电压值被并行地执行。 因此，实现了能够解决由于存储效应，延迟效应和开关噪声引起的问题的固态成像装置及其驱动方法。
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公开(公告)号：US08488735B2
公开(公告)日：2013-07-16
申请号：US12864575
申请日：2009-01-23
申请人： Kazuki Fujita , Harumichi Mori , Ryuji Kyushima , Masahiko Honda
发明人： Kazuki Fujita , Harumichi Mori , Ryuji Kyushima , Masahiko Honda
IPC分类号： A61B6/00
CPC分类号： G01T1/247 , G01T1/249 , H01L27/14656 , H01L27/14658 , H04N5/32 , H04N5/3592 , H04N5/374
摘要： The present invention relates to a solid-state imaging device and the like having a structure for capturing a high-resolution image even when any of the reading-out wiring and row selecting wiring is disconnected. A pixel portion Pm,n of the photodetecting section (10) includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SW1 connected to the photodiode PD. The pixel portion Pm,n occupies a substantially square region, and most of the region is a region of the photodiode PD. A field-effect transistor serving as the reading-out switch SW1 is formed in one corner of the region. A channel stopper CS is continuously formed in a region sandwiched by pixel portions. In a region surrounded by any 2×2 pixel portions adjacent to one another, a dummy photodiode PD1 surrounded by the channel stopper CS is formed.
摘要翻译： 本发明涉及即使当任何读出布线和行选择布线断开时，具有用于捕获高分辨率图像的结构的固态成像装置等。 受光部（10）的像素部Pm，n包括：光电二极管PD，其生成与入射光强度相对应的量的电荷;以及与光电二极管PD连接的读出用开关SW1。 像素部分Pm，n占据基本上正方形的区域，并且大部分区域是光电二极管PD的区域。 用作读出开关SW1的场效应晶体管形成在该区域的一个拐角处。 在由像素部分夹持的区域中连续形成通道阻挡件CS。 在由彼此相邻的任何2×2像素部分包围的区域中，形成由通道阻挡器CS包围的虚拟光电二极管PD1。
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公开(公告)号：US08050381B2
公开(公告)日：2011-11-01
申请号：US12428236
申请日：2009-04-22
申请人： Harumichi Mori , Ryuji Kyushima , Kazuki Fujita
发明人： Harumichi Mori , Ryuji Kyushima , Kazuki Fujita
CPC分类号： A61B6/14 , A61B6/4233 , A61B6/5235 , G01T1/2018 , H04N5/23238 , H04N5/32
摘要： The solid-state image pick-up device (1) includes a photodetecting section (10) which is formed by two-dimensionally aligning M×N (M and N are integers not less than 2) pixels in M rows and N columns and has a rectangular photodetecting surface. This solid-state image pick-up device (1) is supported rotatably by a rotation controlling section, and the rotation controlling section controls the rotation angle of the solid-state image pick-up device (1) so that the row direction or column direction of the photodetecting section (10) becomes parallel to the movement direction (B) of the solid-state image pick-up device (1) in one of the two imaging modes, and both of the row direction and the column direction of the photodetecting section (10) tilt with respect to the movement direction (B) of the solid-state image pick-up device (1) in the other imaging mode of the two imaging modes.
摘要翻译： 固体摄像装置（1）包括通过M行N列（M和N是不小于2的整数）像素的二维排列而形成的受光部（10） 矩形光电检测表面。 该固体摄像装置（1）由旋转控制部可旋转地支撑，旋转控制部控制固体摄像装置（1）的旋转角度，使得行方向或列 在两个成像模式之一中，受光部分（10）的方向变得平行于固态图像拾取装置（1）的移动方向（B），而行方向和列方向 光检测部分（10）在两个成像模式的另一成像模式中相对于固态图像拾取装置（1）的移动方向（B）倾斜。
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公开(公告)号：US08026490B2
公开(公告)日：2011-09-27
申请号：US12465006
申请日：2009-05-13
申请人： Harumichi Mori , Masahiko Honda , Ryuji Kyushima , Kazuki Fujita
发明人： Harumichi Mori , Masahiko Honda , Ryuji Kyushima , Kazuki Fujita
IPC分类号： G01T1/20
CPC分类号： H01L27/14618 , G01T1/2018 , H01L31/0203 , H01L31/02322 , H01L2924/0002 , H04N5/32 , H01L2924/00
摘要： Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.
摘要翻译： 接线基板11和12以分别在布线基板之间形成的台阶和分别具有沉积在感光部21和31上的闪烁体25和35的辐射摄像元件2和3分别位于固定基座10上的方式 安装在布线基板11和12上。放射线成像元件2被定位成使得其设置表面突出超过辐射成像元件3的辐射入射表面，并且辐射成像元件2的感光部分21和感光部分31 放射线成像元件3的一部分并置于该部分不重叠的程度。 辐射摄像元件2的感光部分21靠近辐射摄像元件3侧的边缘延伸，并且形成基本均匀厚度的闪烁器25直至该位置。
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公开(公告)号：US08018515B2
公开(公告)日：2011-09-13
申请号：US11883757
申请日：2006-02-02
CPC分类号： H04N5/3559 , H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion Pm,n in the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor T1 for outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor T2 for inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T1; a discharging transistor T3 for discharging the charges of the capacitive element C; and a selecting transistor T4 for selectively outputting a voltage value output from the amplifying transistor T1 to a wiring Ln.
摘要翻译： 提供了具有改进的线性度和动态范围的固态成像装置。 固态成像装置中的每个像素部分Pm，n包括：用于产生与入射光强度相对应的量的电荷的掩埋光电二极管PD; 电容元件C并联连接到掩埋光电二极管PD，以积累在埋入式光电二极管PD中产生的电荷; 放大晶体管T1，用于输出对应于输入到栅极端子的电压值的电压值; 转移晶体管T2，用于将与电容元件C中的累积电荷量相对应的电压值输入到放大晶体管T1的栅极端; 用于对电容元件C的电荷进行放电的放电晶体管T3; 以及选择晶体管T4，用于选择性地将从放大晶体管T1输出的电压值输出到布线Ln。
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公开(公告)号：US20100194937A1
公开(公告)日：2010-08-05
申请号：US12676282
申请日：2008-09-03
IPC分类号： H04N5/335
CPC分类号： H04N5/3653 , H04N5/32 , H04N5/359 , H04N5/367
摘要： A solid state imaging device 1 includes a photodetecting section 10, a signal readout section 20, a controlling section 30, and a correction processing section 40. In the photodetecting section 10, M×N pixel portions each including a photodiode which generates charges as much as an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. Charges generated in each pixel portion Pm,n are input into an integration circuit Sn through a readout wiring LO,n, and a voltage value output corresponding to the charge amount from the integration circuit Sn is output to an output wiring Lout through a holding circuit Hn. In the correction processing section 40, correction processing is performed for frame data repeatedly output from the signal readout section 20, and frame data after being subjected to the correction processing is output.
摘要翻译： 固态成像装置1包括光电检测部10，信号读出部20，控制部30和校正处理部40.在受光部10中，M×N个像素部分，每个像素部分包括产生电荷的光电二极管 连接到光电二极管的入射光强度和读出开关二维排列成M行N列。 每个像素部分Pm，n中产生的电荷通过读出配线LO，n输入到积分电路Sn中，并且与积分电路Sn的电荷量对应的电压值输出通过保持电路输出到输出布线Lout 嗯。 在校正处理部40中，对从信号读出部20重复输出的帧数据进行校正处理，输出经过校正处理后的帧数据。
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公开(公告)号：US20090224165A1
公开(公告)日：2009-09-10
申请号：US12465003
申请日：2009-05-13
申请人： Harumichi Mori , Masahiko Honda , Ryuji Kyushima , Kazuki Fujita
发明人： Harumichi Mori , Masahiko Honda , Ryuji Kyushima , Kazuki Fujita
CPC分类号： H01L27/14618 , G01T1/2018 , H01L31/0203 , H01L31/02322 , H01L2924/0002 , H04N5/32 , H01L2924/00
摘要： Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.
摘要翻译： 接线基板11和12以分别在布线基板之间形成的台阶和分别具有沉积在感光部21和31上的闪烁体25和35的辐射摄像元件2和3分别位于固定基座10上的方式 安装在布线基板11和12上。放射线成像元件2被定位成使得其设置表面突出超过辐射成像元件3的辐射入射表面，并且辐射成像元件2的感光部分21和感光部分31 放射线成像元件3的一部分并置于该部分不重叠的程度。 辐射摄像元件2的感光部分21靠近辐射摄像元件3侧的边缘延伸，并且形成基本均匀厚度的闪烁器25直至该位置。
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公开(公告)号：US07432509B2
公开(公告)日：2008-10-07
申请号：US10536280
申请日：2003-11-26
申请人： Harumichi Mori , Kazuki Fujita , Ryuji Kyushima , Masahiko Honda
发明人： Harumichi Mori , Kazuki Fujita , Ryuji Kyushima , Masahiko Honda
IPC分类号： G01T1/20
CPC分类号： G01T1/2018
摘要： A radiographic imaging apparatus 1 has a solid-state image sensor 11, a scintillator 21, and others. The solid-state image sensor 11 has a photosensitive section 13 and an amplification section 15, which are formed on one side of an Si substrate 12. The photosensitive section 13 includes a plurality of photodiodes 16 as photoelectric converters for photoelectric conversion, and these photodiodes 16 are arrayed in a two-dimensional pattern. The amplification section 15 amplifies outputs from the photodiodes 16 and outputs amplified signals. The scintillator 21 is arranged to cover a region where the photosensitive section 13 and the amplification section 15 are formed on the one side of Si substrate 12, and is formed directly on the region.
摘要翻译： 射线照相成像设备1具有固态图像传感器11，闪烁体21等。 固态图像传感器11具有形成在Si衬底12的一侧上的光敏部分13和放大部分15。 感光部13包括作为光电转换用光电转换器的多个光电二极管16，这些光电二极管16以二维图案排列。 放大部分15放大来自光电二极管16的输出并输出放大的信号。 闪烁体21被布置成覆盖在Si衬底12的一侧上形成感光部13和放大部15的区域，并直接形成在该区域上。
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公开(公告)号：US20080192134A1
公开(公告)日：2008-08-14
申请号：US11883757
申请日：2006-02-02
IPC分类号： H04N5/335
CPC分类号： H04N5/3559 , H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion Pm,n in the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor T1 for outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor T2 for inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T1; a discharging transistor T3 for discharging the charges of the capacitive element C; and a selecting transistor T4 for selectively outputting a voltage value output from the amplifying transistor T1 to a wiring Ln.
摘要翻译： 提供了具有改进的线性度和动态范围的固态成像装置。 固态成像装置中的每个像素部分P m，n N包括：用于产生与入射光强度相对应的量的电荷的掩埋光电二极管PD; 电容元件C并联连接到掩埋光电二极管PD，以积累在埋入式光电二极管PD中产生的电荷; 用于输出对应于输入到所述栅极端子的电压值的电压值的放大晶体管T 1; 用于将对应于电容元件C中的累积电荷量的电压值输入到放大晶体管T 1的栅极端子的转移晶体管T SUB2 < 用于放电电容元件C的电荷的放电晶体管T 3 3; 以及用于选择性地将从放大晶体管T 1 1输出的电压值输出到布线L n2的选择晶体管T 4。
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公开(公告)号：US07276683B2
公开(公告)日：2007-10-02
申请号：US10536319
申请日：2003-11-26
申请人： Harumichi Mori , Kazuki Fujita , Ryuji Kyushima , Masahiko Honda
发明人： Harumichi Mori , Kazuki Fujita , Ryuji Kyushima , Masahiko Honda
CPC分类号： H01L27/14603 , H01L27/14636 , H01L27/14663 , H01L2224/48091 , H01L2924/00014
摘要： N+-type semiconductor regions 12d are formed on a front surface side of a p−-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p−-type semiconductor constitute photodiodes. A metal wire 14 connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so as to extend along a row direction and along a column direction between adjacent n+-type semiconductor regions 12d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines 53 are formed on a third insulating layer 16. The signal readout lines 53 are made of metal such as aluminum, are located above the n+-type semiconductor regions 12d when viewed from the direction of incidence of light, and are provided so as to extend along the column direction.
摘要翻译： 半导体衬底12的正电极层12c的正面上形成有N + +型半导体区域12d，这些n + ＆lt; / SUP＆gt;型半导体和p + - + - 型半导体构成光电二极管。 连接到隔离区域12e的金属线14形成在第一绝缘层13上。 金属丝14被设置成沿着相邻的n + +型半导体区域12d之间的行方向和列方向延伸，并且当从入射方向 光。 信号读出线53形成在第三绝缘层16上。 信号读出线53由铝等金属构成，从光入射方向观察时位于n + +半导体区域12d的上方，并且设置成沿着 列方向。
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