公开(公告)号：US06404473B1

公开(公告)日：2002-06-11

申请号：US09092078

申请日：1998-06-05

申请人： Toshiki Kaneko ,  Yuichi Hashimoto ,  Kikuo Ono ,  Kazuhiro Ohhara ,  Takahiro Ochiai ,  Masaru Takabatake ,  Kenichi Onisawa ,  Kenichi Cyahara

发明人： Toshiki Kaneko ,  Yuichi Hashimoto ,  Kikuo Ono ,  Kazuhiro Ohhara ,  Takahiro Ochiai ,  Masaru Takabatake ,  Kenichi Onisawa ,  Kenichi Cyahara

IPC分类号： G02F11343

CPC分类号： G02F1/136286 ,  G02F1/134363 ,  G02F1/136227

摘要： A liquid crystal display device comprising a wiring line of a laminated structure over an insulating substrate. The laminated structure includes a first layer made of a first metal layer, and a second layer formed over the first layer and made of a second metal layer having the same principal component as that of the first metal layer but a different added element and/or a different composition. The first layer has a side end face of a right-tapered shape, whereas the second layer has a side end face set at a right angle or counter-tapered with respect to the substrate face.

摘要翻译： 一种液晶显示装置，包括绝缘基板上的叠层结构的布线。 层叠结构包括由第一金属层制成的第一层和形成在第一层上并由具有与第一金属层相同的主要成分的第二金属层制成的第二层，但第二层具有不同的添加元素和/或 不同的组成。 第一层具有右锥形的侧端面，而第二层的侧端面相对于基板面设置成直角或相对锥度。

公开(公告)号：US06317185B1

公开(公告)日：2001-11-13

申请号：US09322151

申请日：1999-05-28

申请人： Yuuichi Harano ,  Kenichi Chahara ,  Kenichi Onisawa ,  Nobuyuki Suzuki ,  Masaru Takabatake ,  Toshiki Kaneko

发明人： Yuuichi Harano ,  Kenichi Chahara ,  Kenichi Onisawa ,  Nobuyuki Suzuki ,  Masaru Takabatake ,  Toshiki Kaneko

IPC分类号： G02F11343

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295

摘要： A liquid crystal display apparatus is high in manufacturing yield because defects caused by short-circuiting between the electrodes are eliminated. The liquid crystal display apparatus employs films made of an Al—Nd alloy of Nd content of 1 to 4.5 wt % in at least one of the gate wiring and the data wiring.

摘要翻译： 液晶显示装置的制造成品率高，因为消除了由电极之间的短路引起的缺陷。 液晶显示装置在栅极布线和数据布线中的至少一个中使用由Nd含量为1〜4.5重量％的Al-Nd合金构成的膜。

公开(公告)号：US5777702A

公开(公告)日：1998-07-07

申请号：US588446

申请日：1996-01-18

申请人： Masatoshi Wakagi ,  Kenichi Onisawa ,  Masahiko Ando ,  Toshiki Kaneko ,  Tetsuroh Minemura ,  Tomohiro Okada

发明人： Masatoshi Wakagi ,  Kenichi Onisawa ,  Masahiko Ando ,  Toshiki Kaneko ,  Tetsuroh Minemura ,  Tomohiro Okada

IPC分类号： G02F1/136 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H01L21/00

CPC分类号： G02F1/13458 ,  G02F1/1362 ,  G02F1/1345 ,  G02F2001/13629

摘要： A liquid crystal display device can be fabricated through simplified processes, and provide a high product yield and excellent picture displaying characteristic. The liquid crystal display device includes a first substrate having thereon a plurality of drain wirings, a plurality of gate wirings crossing the plurality of drain wirings in a matrix array, a plurality of thin film transistors disposed in the vicinity of these crossings, and a plurality of pixel electrodes connected to the thin film transistors, respectively. A second substrate is disposed in opposing relation to the first substrate, and a liquid crystal layer is sandwiched between these substrates. Each terminal portion of the plurality of drain wirings and plurality of gate wirings is constructed with a metallic film covered with a transparent conductive film.

摘要翻译： 可以通过简化的工艺制造液晶显示装置，并提供高产品产量和优异的图像显示特性。 液晶显示装置包括：第一基板，具有多个漏极布线;多个栅极布线，与矩阵阵列中的多个漏极布线交叉;多个薄膜晶体管，设置在这些交叉点附近;以及多个 分别连接到薄膜晶体管的像素电极。 第二基板与第一基板相对设置，并且液晶层夹在这些基板之间。 多个漏极布线和多个栅极布线的每个端子部分由覆盖有透明导电膜的金属膜构成。

公开(公告)号：US08344382B2

公开(公告)日：2013-01-01

申请号：US13001428

申请日：2009-06-26

申请人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

发明人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/78687

摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

摘要翻译： 提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。 作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边 通过蚀刻去除。 此后，使用半导体晶体核作为晶种形成第二半导体膜。

公开(公告)号：US20110108841A1

公开(公告)日：2011-05-12

申请号：US13001428

申请日：2009-06-26

申请人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

发明人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/78687

摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

摘要翻译： 提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。 作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边 通过蚀刻去除。 此后，使用半导体晶体核作为晶种形成第二半导体膜。

公开(公告)号：US20090146930A1

公开(公告)日：2009-06-11

申请号：US12275414

申请日：2008-11-21

申请人： Etsuko NISHIMURA ,  Masatoshi Wakagi ,  Kenichi Onisawa ,  Mieko Matsumura

发明人： Etsuko NISHIMURA ,  Masatoshi Wakagi ,  Kenichi Onisawa ,  Mieko Matsumura

IPC分类号： G09G3/30

CPC分类号： H01L27/3262 ,  H01L27/3276 ,  H01L2227/323

摘要： Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.

摘要翻译： 用于驱动以矩阵状配置排列的多个像素中的每一个的每个TFT使用交错型多晶硅TFT来构成。 与形成多晶硅膜形成时的耐高温材料的高电阻材料相比，形成沟道的多晶Si层的栅电极配置在下层 TFT。 与多晶硅层相比，由低电阻材料构成的栅极线设置在上层。 栅电极和栅极线通过在栅极绝缘膜中钻孔的通孔彼此连接。 每个有机电致发光元件的各个配置组件在线形成时被部分地共同使用，从而抑制了步骤，处理和配置组件的增加。

公开(公告)号：US06226060B1

公开(公告)日：2001-05-01

申请号：US08958672

申请日：1997-10-27

申请人： Kenichi Onisawa ,  Kikuo Ono ,  Toshiki Kaneko ,  Kenichi Chahara ,  Katsunori Nakajima ,  Etsuko Nishimura ,  Takeshi Satou ,  Tetsuro Minemura

发明人： Kenichi Onisawa ,  Kikuo Ono ,  Toshiki Kaneko ,  Kenichi Chahara ,  Katsunori Nakajima ,  Etsuko Nishimura ,  Takeshi Satou ,  Tetsuro Minemura

IPC分类号： G02F1136

CPC分类号： G02F1/13458 ,  G02F1/1345 ,  G02F1/13452 ,  G02F1/136286 ,  G02F2001/13629 ,  H05K1/09

摘要： In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost, 6×10−4 &OHgr;cm.

摘要翻译： 在有源矩阵型液晶显示装置中，形成与扫描线相关的信号传送线与该装置的数据信号线之间的连接部分的至少一个元件的材料是至少选自以下的化学元素的合金： 由Nb，Mo，Ta和W组成的组与Cr，扫描线和用于产生扫描脉冲的装置通过形成在绝缘膜中的第一开口彼此连接，数据信号线和用于产生图像的装置 数据通过形成在绝缘膜中的第二开口彼此连接，连接到产生扫描脉冲的装置的多晶薄膜被插入到第一开口中，并且多晶薄膜连接到第一开口 用于生成图像数据的装置插入到第二开口中，并且多晶薄膜由主要由氧化铟制成的氧化铟锡和添加有氧化锡的氧化铟锡组成，具有特定的电阻 最大的是6x10-4欧米伽。