摘要:
There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.
摘要:
There are disclosed a process for cleaning ammonia-containing exhaust gas which comprises bringing the exhaust gas into contact with an ammonia decomposition catalyst (e.g. nickel, ruthenium) under heating to decompose most of the ammonia into nitrogen and hydrogen, subsequently bringing the resultant mixed gas into contact with an ammonia adsorbent (e.g. synthetic zeolite) for adsorbing undecomposed ammonia, and then heating regenerating the adsorbent, while bringing reproduced exhaust gas containing the ammonia desorbed from the adsorbent into contact under heating, with the ammonia decomposition catalyst or another ammonia decomposition catalyst; and an apparatus for carrying out the process. It is made possible by the process and apparatus to efficiently and completely clean ammonia-containing exhaust gas exhausted from a semiconductor manufacturing process and the like without generating useless byproduct and dispensing with secondary treatment.
摘要:
A dust removing apparatus equipped with a back washing mechanism and a dust removing method for removing solid silica fine powder contained in a gas discharged from a semiconductor producing step of a single-wafer processing atmospheric pressure CVD apparatus without causing problems caused by the increase of a pressure loss and by a pressure fluctuation, wherein filter elements each having a ratio of a surface area of a primary side of a filter membrane to an apparent external surface area of the filter element of from 1 to 5 is used, gas jetting nozzle(s) for back washing is formed in the secondary side of the filter element, back washing is not carried out during filtration in the filter element and at or after changing the processing of a wafer in the CVD apparatus, back washing is carried out to blow down the silica fine powder accumulated on the primary side of the filter membrane.
摘要:
There is diclosed a process for purifying hydrogen gas which comprises removing impurities such as nitrogen, oxygen, methane, carbon monoxide, carbon dioxide and moisture contained in a crude hydrogen gas by bringing the crude hydrogen gas into contact under heating with a hydride of a zirconium alloy such as Zr-V, Zr-V-Ni, Zr-V-Cr, Zr-V-Co, Zr-V-Fe, Zr-V-Cu, Zr-V-Ni-Cr, Zr-V-Ni-Co and Zr-V-Cr-Fe. By virtue of using the above Zr alloy hydride, the process enables highly advanced purification of crude hydrogen gas by removing such impurities as above to a level as low as 1 ppb or less in high safety and efficiency at low installation and running costs.
摘要:
An annular operation unit is formed as an outer shape to cover entire outline of a surface of a case, and inputting switches and displaying unit are attached inside of an opening at the center side of the annular operation unit, allowing the annular operation unit to have a size to perform fine rotational operations in case the entire size of the remote control transmitting device is miniaturized.
摘要:
A droplet ejection head comprises: a substrate having first through-holes forming reservoir chambers, a second through-hole forming a supply chamber, and a bonding film on one surface; a nozzle plate having nozzles for ejecting ejection liquid and a second bonding film on one surface, the first and second films being bonded together to cover the first through-holes and the second through-hole; a sealing plate on another surface of the substrate covering the first through-holes, one surface of the sealing plate contacting the substrate's another surface; and piezoelectric means on another surface of the sealing plate for driving the droplet ejection head. The bonding films contain an Si-skeleton of constituent atoms containing silicon atoms, with siloxane (Si—O) bonds and elimination groups bonded to the silicon atoms, the constituent atoms being randomly bonded together, and the elimination groups existing near a surface of the bonding films.
摘要:
In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.
摘要:
A drilling device prevents recurrence of an overload condition after occurrence of the overload condition, thereby improving operability and safety in the drilling device. A motor for rotating a drill is connected to an AC power source through a motor control unit, a current detector, and a power switch. A magnet is also connected to the AC power source through the power switch and a full-wave rectifier. The motor control unit rotationally drives the motor on the basis of a signal sent from a main control unit according to a state in which a motor start switch is on. The main control unit controls the motor control unit to gradually reduce a supply voltage to the motor when the motor becomes overloaded, to gradually increase the voltage to the normal power supply condition when the overload condition is vanished, and to stop power supply to the motor if the overload condition continues for a predetermined period.
摘要:
A radiator includes: an insulating substrate, a heating element or a semiconductor chip is mounted; and a heat sink that is provided the insulating substrate through a stress relaxation member that has a stress absorbing space, in which the heat sink dissipates heat from the semiconductor chip. The insulating substrate, the stress relaxation member, and the heat sink are braze-bonded to each other. The heat sink has: a top plate that is bonded to the stress relaxation member; and a bottom plate that is bonded to the top plate, and the top plate and the bottom plate forms a passage of coolant therebetween. A thickness proportion between the top plate and the bottom plate falls within a range of 1:3 to 1:5.
摘要:
A method of brazing a heat sink includes: fitting at least a part of a bottom plate between protruding opposite ends of a top plate; fixing a jig to an outer periphery of the top plate in order to prevent the top plate that thermally expands from extending outward in a width direction of the top plate; and braze-bonding an inner side surface of the top plate to a side surface of the bottom plate, which faces the inner side surface of the top plate.