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    Surface acoustic wave device
    31.
    发明授权
    Surface acoustic wave device 失效
    表面声波装置

    公开(公告)号：US5838090A

    公开(公告)日：1998-11-17

    申请号：US972162

    申请日：1997-11-17

    申请人： Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

    发明人： Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

    IPC分类号： H03H3/08 ,  H03H3/10 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/00

    CPC分类号： H03H9/02582

    摘要： An object of the present invention is to improve an SAW propagation velocity V, an electromechanical coupling coefficient (K.sup.2), and a delay time temperature coefficient (TCD) to achieve a high-frequency SAW device and power saving and size reduction of the device. An SAW device according to the present invention includes at least diamond as a substrate material, a c-axis oriented polycrystalline LiNbO.sub.3 layer, arranged on the diamond, an SiO.sub.2 layer arranged on the LiNbO.sub.3 layer, and an interdigital transducer and uses an SAW in an nth mode (n=0, 1, 2: wavelength: .lambda. .mu.m). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), and the thickness of the SiO.sub.2 layer is t.sub.2 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda.) and kh.sub.2 =2.pi.(t.sub.2 /.lambda.) fall within predetermined ranges. In addition, the mode of the SAW is selected. With this arrangement, an SAW device having a propagation velocity (V) of 7,000 m/s or more, an electromechanical coupling coefficient (K.sup.2) of 2% or more, and a coefficient TCD of .+-.10 ppm/.degree.C. or less, which is the stability of the device frequency with respect to the temperature, can be provided.

    摘要翻译： 本发明的目的是提高SAW传播速度V，机电耦合系数（K2）和延迟时间温度系数（TCD），以实现高频SAW器件，并且节省设备的功率和尺寸。 根据本发明的SAW器件至少包括作为衬底材料的金刚石，布置在金刚石上的c轴取向的多晶LiNbO 3层，布置在LiNbO 3层上的SiO 2层，以及叉指换能器，并且使用 第n个模式（n = 0,1,2：波长：λm）。 当LiNbO 3层的厚度为t1（μm），SiO 2层的厚度为t2（μm）时，kh1 =2π（t1 /λ），kh2 =2π（t2 /λ）落在规定的范围内 范围。 此外，选择SAW的模式。 根据该结构，具有传播速度（V）为7000m / s以上，机电耦合系数（K2）为2％以上，系数TCD为+/- 10ppm /℃的SAW器件，或 可以提供相对于温度的装置频率的稳定性。

    Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer
    32.
    发明授权
    Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer 失效
    具有较薄的ZnO压电层的金刚石 - ZnO表面声波器件

    公开(公告)号：US5777422A

    公开(公告)日：1998-07-07

    申请号：US720369

    申请日：1996-09-27

    申请人： Hiroyuki Kitabayashi ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Shin-ichi Shikata

    发明人： Hiroyuki Kitabayashi ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Shin-ichi Shikata

    IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H01L41/08

    CPC分类号： H03H9/02582

    摘要： The present invention directed to a SAW device comprising a diamond layer thinner ZnO layer, which can be operated at higher frequency, with superior characteristics including less energy loss. The first SAW device according to the present invention comprises a layer constitution shown in FIG. 23, wherein, for 0th mode surface acoustic wave having a wavelength .lambda., a parameter kh3 =(2.pi./.lambda.)t3 satisfies: 0.0470.ltoreq.kh3.ltoreq.0.0625, and wherein a parameter kh1 =(2.pi./.lambda.)t1 and a parameter kh2=(2.pi./.lambda.)t2 are given within a region A-B-C-D-E-F-A in a two-dimensional Cartesian coordinate graph having ordinate axis of the kh1 and abscissa axis of kh2, the outer edge of the region A-B-C-D-E-F-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, and F, and lines A-B, B-C, C-D, D-E, E-F and F-A, as shown in a two-dimensional Cartesian coordinate graph of FIG. 3.

    摘要翻译： 本发明涉及一种SAW器件，其包括可以以更高频率操作的金刚石层更薄的ZnO层，具有包括较少能量损失的优异特性。 根据本发明的第一SAW器件包括图1所示的层结构。 23，其中，对于具有波长λ的第0模式声表面波，参数kh3 =（2π/λ）t3满足：0.0470≤kh3≤0.0625，并且其中参数kh1 =（2π/λ） t1和参数kh2 =（2 pi /λ）t2在具有kh1和横坐标轴kh2的纵坐标轴的二维笛卡尔坐标图中的区域ABCDEFA内给出，区域ABCDEFA的外边缘由a 由点A，B，C，D，E和F以及线AB，BC，CD，DE，EF和FA组成的笛卡尔坐标中的闭合链，如图2的二维笛卡尔坐标图所示。 3。

    Microwave resonator of compound oxide superconductor material having a tuning element with a superconductive tip
    34.
    发明授权
    Microwave resonator of compound oxide superconductor material having a tuning element with a superconductive tip 失效
    具有超导电极的调谐元件的复合氧化物超导体材料的微波谐振器

    公开(公告)号：US5391543A

    公开(公告)日：1995-02-21

    申请号：US910573

    申请日：1992-07-08

    申请人： Kenjiro Higaki ,  Akihiro Moto ,  Hideo Itozaki

    发明人： Kenjiro Higaki ,  Akihiro Moto ,  Hideo Itozaki

    IPC分类号： H01P7/08 ,  H01B12/02

    CPC分类号： H01P7/082 ,  Y10S505/701 ,  Y10S505/866

    摘要： A microwave resonator includes a superconducting signal conductor formed on a first dielectric substrate, and a superconducting ground conductor formed on a second dielectric substrate. The first dielectric substrate is stacked on the superconducting ground conductor of the second dielectric substrate. A rod is adjustably provided to be able to penetrate into an electromagnetic field created by a microwave propagation through the superconducting signal conductor, so that the resonating frequency .function..sub.0 of the microwave resonator can be easily adjusted by controlling the position of a tip end of the rod.

    摘要翻译： 微波谐振器包括形成在第一介电衬底上的超导信号导体和形成在第二电介质衬底上的超导接地导体。 第一电介质基板堆叠在第二电介质基板的超导接地导体上。 可调节地设置杆以能够穿透通过超导信号导体的微波传播产生的电磁场，使得可以通过控制杆的尖端的位置来容易地调节微波谐振器的谐振频率f0 。

    Surface acoustic wave device incorporating single crystal LiNbO.sub.3
    38.
    发明授权
    Surface acoustic wave device incorporating single crystal LiNbO.sub.3 失效
    结合单晶LiNbO3的表面声波器件

    公开(公告)号：US6025636A

    公开(公告)日：2000-02-15

    申请号：US951615

    申请日：1997-10-16

    申请人： Hideaki Nakahata ,  Masashi Narita ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

    发明人： Hideaki Nakahata ,  Masashi Narita ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

    IPC分类号： H03H9/02 ,  H01L29/82

    CPC分类号： H03H9/02582

    摘要： A surface acoustic wave device includes at least diamond, a single crystal LiNbO.sub.3 layer formed on the diamond, and an interdigital transducer formed in contact with the LiNbO.sub.3 layer and uses a surface acoustic wave (wavelength: .lambda..sub.n .mu.m) in an nth-order mode (n=1 or 2). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) and the cut orientation (.theta., .PHI., and .psi. represented by an Eulerian angle representation) with respect to the crystallographic fundamental coordinate system of the LiNbO.sub.3 layer are selected from values within specific ranges. Consequently, a surface acoustic wave device which increases the propagation velocity (V) of a surface acoustic wave and improves the electromechanical coupling coefficient (K.sup.2) is realized.

    摘要翻译： 表面声波装置至少包括金刚石，形成在金刚石上的单晶LiNbO 3层和与LiNbO 3层接触形成的叉指换能器，并使用n阶的表面声波（波长：λnμm） 模式（n = 1或2）。 当LiNbO 3层的厚度为t1（μm）时，相对于晶体基础坐标系，kh1 =2π（t1 /λn）和切割取向（θ，PHI和由欧拉角表示的psi） 的LiNbO 3层选自特定范围内的值。 因此，实现了提高声表面波的传播速度（V）并提高机电耦合系数（K2）的声表面波装置。