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218 条记录 (耗时 0.027 秒)

    Variable write and read methods for resistive random access memory
    32.
    发明授权
    Variable write and read methods for resistive random access memory 失效
    电阻随机存取存储器的可变写和读方法

    公开(公告)号：US08054675B2

    公开(公告)日：2011-11-08

    申请号：US13028246

    申请日：2011-02-16

    申请人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    发明人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0057

    摘要： Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

    摘要翻译： 公开了用于电阻随机存取存储器（RRAM）的可变写和读方法。 这些方法包括初始化写入序列并验证RRAM单元的电阻状态。 如果需要写入脉冲，则通过RRAM单元施加两个或更多写入脉冲，以将期望的数据状态写入RRAM单元。 每个后续写入脉冲具有基本上相同或更大的写入脉冲持续时间。 随后的写入脉冲被施加到RRAM单元，直到RRAM单元处于期望的数据状态，或直到预定数量的写入脉冲已经被施加到RRAM单元为止。 还公开了一种读取方法，其中随后的读取脉冲通过RRAM单元被施加，直到读取成功或直到预定数量的读取脉冲已经被应用于RRAM单元为止。

    Asymmetric Write Current Compensation
    34.
    发明申请
    Asymmetric Write Current Compensation 有权
    非对称写电流补偿

    公开(公告)号：US20110134688A1

    公开(公告)日：2011-06-09

    申请号：US13016445

    申请日：2011-01-28

    申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

    发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

    IPC分类号： G11C11/15 ,  H01L21/02 ,  H01L29/82

    CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

    摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

    摘要翻译： 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

    DOMAIN WALL MOVEMENT ON MAGNETIC STRIP TRACKS
    36.
    发明申请
    DOMAIN WALL MOVEMENT ON MAGNETIC STRIP TRACKS 有权
    磁畴轨道上的域壁运动

    公开(公告)号：US20100090687A1

    公开(公告)日：2010-04-15

    申请号：US12500263

    申请日：2009-07-09

    申请人： Xiaobin Wang ,  Haiwen Xi ,  Yiran Chen ,  Yuan Yan ,  Jun Zheng

    发明人： Xiaobin Wang ,  Haiwen Xi ,  Yiran Chen ,  Yuan Yan ,  Jun Zheng

    IPC分类号： G01R33/02

    CPC分类号： G01R33/1284 ,  G01R33/1207 ,  G01R33/1292 ,  G11C19/0816

    摘要： Magnetic shift tracks or magnetic strips, to which application of a rotating magnetic field or by rotation of the strip itself allows accurate determination of domain wall movement. One particular embodiment is a method of determining a position of a domain wall in a magnetic strip. The method includes applying a rotating magnetic field to the magnetic strip, the magnetic field rotating around a longitudinal axis of the magnetic strip, and after applying the magnetic field, determining a displacement of the domain wall to a second position.

    摘要翻译： 磁性移动轨迹或磁条，旋转磁场的应用或通过带自身的旋转可以准确地确定畴壁运动。 一个具体实施例是确定磁条中的畴壁的位置的方法。 该方法包括对磁条施加旋转磁场，围绕磁条的纵向轴线旋转的磁场，以及在施加磁场之后，确定畴壁向第二位置的位移。

    STRAM CELLS WITH AMPERE FIELD ASSISTED SWITCHING
    38.
    发明申请
    STRAM CELLS WITH AMPERE FIELD ASSISTED SWITCHING 审中-公开
    带安培场辅助开关的STRAM电池

    公开(公告)号：US20100053822A1

    公开(公告)日：2010-03-04

    申请号：US12200034

    申请日：2008-08-28

    申请人： Haiwen Xi ,  Paul Anderson ,  Zheng Gao ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue

    发明人： Haiwen Xi ,  Paul Anderson ,  Zheng Gao ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue

    IPC分类号： G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1675

    摘要： A magnetic tunnel junction cell that has a ferromagnetic pinned layer, a ferromagnetic free layer, and a non-magnetic barrier layer therebetween. The free layer has a larger area than the pinned layer, in some embodiments at least twice the size of the pinned layer, in some embodiments at least three times the size of the pinned layer, and in yet other embodiments at least four times the size of the pinned layer. The pinned layer is offset from the center of the free layer. The free layer has a changeable vortex magnetization, changeable between clockwise and counterclockwise directions.

    摘要翻译： 磁性隧道结电池，其具有铁磁性钉扎层，铁磁性自由层和它们之间的非磁性阻挡层。 自由层具有比被钉扎层更大的面积，在一些实施例中为钉扎层的尺寸的至少两倍，在一些实施例中为被钉扎层的尺寸的至少三倍，并且在其它实施例中为至少四倍的尺寸 被钉扎层。 固定层从自由层的中心偏移。 自由层具有可变的涡流磁化，可在顺时针和逆时针方向之间改变。

    Magnetic field assisted stram cells
    39.
    发明授权
    Magnetic field assisted stram cells 失效
    磁场辅助电极

    公开(公告)号：US08400825B2

    公开(公告)日：2013-03-19

    申请号：US13491891

    申请日：2012-06-08

    申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/1659

    摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

    摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。